ROHM Power Field Effect Transistors (FET) 320

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UT6JB5TCR

ROHM

2SK1974

ROHM

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

RDX045N60FU6

ROHM

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

RD3L07BATTL1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

101 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

93.8 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0127 ohm

70 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

335 pF

RQ3C150BCTB

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

SQUARE

ENHANCEMENT MODE

1

60 A

33 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0085 ohm

15 A

DUAL

S-PDSO-F5

DRAIN

e3

RS6L120BGTB1

ROHM

SP8M3HZGTB

ROHM

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.082 ohm

5 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

50 pF

AEC-Q101

QS5K2TR

ROHM

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8 A

2 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.154 ohm

2 A

DUAL

R-PDSO-G5

1

Not Qualified

e1

10

260

RSH070P05TB1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

7 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

7 A

DUAL

R-PDSO-G8

ESD PROTECTED

NOT SPECIFIED

NOT SPECIFIED

SCT2120AFC

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

.156 ohm

29 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

RQ3G100GNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

15.6 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0183 ohm

10 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RQ3P300BHTB1

ROHM

1

10

260

SCT3080AW7TL

ROHM

TIN

e3

RD3H045SPTL1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.26 ohm

4.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3L140SPTL1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.108 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RS1E260ATTB1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

104 A

52 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN COPPER

.0043 ohm

26 A

DUAL

R-PDSO-F8

DRAIN

e2

10

260

1110 pF

RS1E280BNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

112 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0032 ohm

28 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

SCT3160KW7TL

ROHM

TIN

e3

SCT4013DW7TL

ROHM

QS6J11TR

ROHM

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.105 ohm

2 A

DUAL

R-PDSO-G8

1

Not Qualified

e1

10

260

R6020KNJTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

418 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.196 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e2

10

260

RD3P130SPFRATL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.23 ohm

13 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

RQ7L050ATTCR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

20 A

4.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.044 ohm

5 A

DUAL

R-PDSO-F8

1

10

260

135 pF

RSJ250P10TL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.063 ohm

25 A

SINGLE

R-PSSO-G2

1

e2

10

260

SP8M41HZGTB

ROHM

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

13.6 A

3.4 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN COPPER

.16 ohm

3.4 A

DUAL

R-PDSO-G8

1

e2

10

260

40 pF

AEC-Q101

R6012JNJGTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

327 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN COPPER

.39 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e2

RD3H160SPTL1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

16 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3L01BATTL1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

26 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

7.9 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.084 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

105 pF

RD3L140SPFRATL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

14 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.108 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

100 pF

AEC-Q101

RD3P175SNTL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.119 ohm

17.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3T050CNTL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

1.83 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.76 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RQ3E130BNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

52 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0094 ohm

13 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RS3E180ATTB1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

81 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0061 ohm

18 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

RSJ250P10FRATL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.063 ohm

25 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e2

10

260

AEC-Q101

SCT4018KW7TL

ROHM

SCT4062KRHRC15

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.081 ohm

26 A

SINGLE

R-PSFM-T4

1

TO-247

30

260

3 pF

AEC-Q101

BSM180D12P2E002

ROHM

NOT SPECIFIED

NOT SPECIFIED

HP8M51TB1

ROHM

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

18 A

2.9 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.18 ohm

DUAL

R-PDSO-F6

DRAIN

e3

QH8K22TCR

ROHM

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

18 A

1.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.046 ohm

DUAL

R-PDSO-F8

e3

R6002ENHTB1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.4 ohm

1.7 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

R6020ENJTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

418 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.196 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

e2

10

260

R6020FNJTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

26.7 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

10

260

RD3G03BATTL1

ROHM

RF4C050APTR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.026 ohm

10 A

DUAL

S-PDSO-N6

1

DRAIN

e3

10

260

RF4P025ATTCR

ROHM

RQ3E100BNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0153 ohm

10 A

DUAL

R-PDSO-F5

1

DRAIN

10

260

RQ3L070ATTB

ROHM

TIN

1

e3

10

260

RRQ030P03TR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.075 ohm

3 A

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.