STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STD9NM60T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33.2 A

8.3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.6 ohm

8.3 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e3

STL60N32N3LL

STMicroelectronics

N-CHANNEL

SERIES, 2 ELEMENTS

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

48 A

60 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.12 ohm

32 A

DUAL

R-PDSO-N4

3

DRAIN

Not Qualified

e3

30

260

STD9N10-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

30 mJ

9 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.27 ohm

9 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e3

STV60N03L10

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

STF6NK70Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

200 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STFU15NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

187 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.38 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

STFILED627

STMicroelectronics

STH5NA100FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18.4 A

160 mJ

2.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

2.9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

STN2NE10L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.2 A

20 mJ

2 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.45 ohm

1.8 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOW THRESHOLD

e3

STH8N80FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

800 mJ

5.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

70 W

150 Cel

SILICON

135 ns

1.2 ohm

5.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-218

150 pF

STU7N65M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STE150N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

410 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

450 A

150 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.009 ohm

150 A

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

e3

225

UL RECOGNIZED

SGSP462

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.1 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-218

e0

STE180N05

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

50 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

540 A

180 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.006 ohm

180 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

RTP315N10F7

STMicroelectronics

STRH40P10FSY2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 W

UNSPECIFIED

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

160 A

1310 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.06 ohm

40 A

SINGLE

S-XSFM-P3

Not Qualified

TO-254AA

MTH40N06

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.028 ohm

40 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-218

e0

STU80N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

70 W

1

80 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

STWA46N65DM6AG

STMicroelectronics

SGSP522

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

10 A

e0

STF8NK100Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

320 mJ

6.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.85 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STK14N05

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

35 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

50 W

175 Cel

SILICON

165 ns

MATTE TIN

.12 ohm

14 A

SINGLE

R-PSIP-T3

Not Qualified

e3

150 pF

STF5N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

4.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

4.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

VNV35N07

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

DUAL

R-PDSO-G10

3

30

250

STK24N4LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

96 A

24 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0058 ohm

24 A

DUAL

R-XDSO-N4

DRAIN

Not Qualified

e3

STD90N4F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

400 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0065 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STL80N4LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

UNSPECIFIED

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

80 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.007 ohm

20 A

DUAL

R-XDSO-N5

DRAIN

Not Qualified

e3

STD4LNK60Z

STMicroelectronics

N-CHANNEL

SINGLE

YES

70 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3.3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.3 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

SGSP148

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

550 V

WIRE

ROUND

ENHANCEMENT MODE

1

2 A

.5 A

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ohm

.5 A

BOTTOM

O-MBCY-W3

DRAIN

TO-39

13 pF

STRH40N6SY2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

160 A

512 mJ

40 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

40 A

BOTTOM

R-CBCC-N3

Not Qualified

HIGH RELIABILITY, AVALANCHE RATED

STC5DNF30V

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

18 A

4.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.04 ohm

4.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

STQ1NK60ZR

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1.2 A

60 mJ

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

15 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BUZ71

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

50 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

85 W

175 Cel

SILICON

95 ns

145 ns

TIN LEAD

.1 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

150 pF

STD44N4LF6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

176 A

44 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.018 ohm

44 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STD4N25-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

20 mJ

4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

1.1 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

STS7DNF30L

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

28 A

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.026 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

e0

STD4NC50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.8 A

220 mJ

3.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

3.7 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

STD40NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

385 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

50 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

STU7NF25

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP7NB80FP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

400 mJ

6.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

6.5 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

HIGH VOLTAGE

TO-220AB

e3

SGSP354

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

STL45N60DM6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STF7N90K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STS8DNF3LL

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

32 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.024 ohm

8 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

40

260

STH8NA60FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

480 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-218

STF90N15F7

STMicroelectronics

STRH8N10STF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

456 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.195 ohm

8 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

STWA40N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.088 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

2.4 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.