Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
190 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
900 mJ |
25 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.13 ohm |
25 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
12 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.7 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH VOLTAGE, FAST SWITCHING |
TO-218 |
e0 |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
15 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
35 W |
150 Cel |
SILICON |
320 ns |
TIN LEAD |
.08 ohm |
15 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW THRESHOLD |
TO-220AB |
e0 |
150 pF |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
450 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
750 mJ |
100 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.024 ohm |
100 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
278 W |
UNSPECIFIED |
250 V |
PIN/PEG |
SQUARE |
ENHANCEMENT MODE |
1 |
144 A |
320 mJ |
36 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.1 ohm |
36 A |
SINGLE |
S-XSFM-P3 |
1 |
Not Qualified |
FAST SWITCHING |
TO-254AA |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
850 mJ |
9 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.75 ohm |
9 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-262AA |
e3 |
|||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
75 W |
ENHANCEMENT MODE |
1 |
7 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Lead (Sn/Pb) |
7 A |
e0 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5.2 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
1400 mJ |
30 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0035 ohm |
30 A |
DUAL |
R-XDSO-N4 |
1 |
SOURCE |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11 A |
2.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
3.8 ohm |
2.8 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH VOLTAGE, FAST SWITCHING |
TO-220AB |
e0 |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE, FAST SWITCHING |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
320 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.045 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AD |
e3 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
63 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
136 A |
800 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.087 ohm |
34 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
2.5 pF |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
510 mJ |
22.5 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.12 ohm |
22.5 A |
SINGLE |
S-PSSO-N4 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
6.3 pF |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
40 A |
5 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.022 ohm |
40 A |
DUAL |
R-PDSO-F5 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
24 A |
6 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.03 ohm |
6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
LOW THRESHOLD |
e4 |
|||||||||||||||||||||
|
STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
135 mJ |
50 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) |
.028 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
TO-252AA |
e3 |
|||||||||||||||||||||
STMicroelectronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
850 mJ |
9 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.8 ohm |
9 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
250 W |
1 |
32 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
32 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
UNSPECIFIED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
354 mJ |
30 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.045 ohm |
30 A |
BOTTOM |
R-XBCC-N3 |
DRAIN |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
EUROPEAN SPACE AGENCY |
||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
210 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
640 A |
330 mJ |
160 A |
10 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0037 ohm |
160 A |
DUAL |
R-PDSO-G10 |
DRAIN |
Not Qualified |
LOW THRESHOLD, ULTRA LOW ON-RESISTANCE |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20.8 A |
210 mJ |
5.2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
1.8 ohm |
5.2 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
30 |
245 |
|||||||||||||||||
STMicroelectronics |
500 W |
1 |
110 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
110 A |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
85 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
150 mJ |
7 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.9 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
16 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.7 ohm |
16 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
150 W |
ENHANCEMENT MODE |
1 |
60 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
60 A |
|||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.8 ohm |
1 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e0 |
||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
288 W |
UNSPECIFIED |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
288 A |
3810 mJ |
72 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
72 A |
SINGLE |
R-XSFM-T3 |
Not Qualified |
HIGH RELIABILITY, AVALANCHE RATED |
TO-254AA |
||||||||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.06 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
FAST SWITCHING |
TO-218 |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
135 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
400 mJ |
6.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.5 ohm |
6.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH VOLTAGE |
TO-220AB |
e3 |
||||||||||||||||||||
STMicroelectronics |
500 W |
4 |
44 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
44 A |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
625 W |
6 |
48 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
48 A |
|||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
120 mJ |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.1 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252 |
e3 |
||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
15 W |
ENHANCEMENT MODE |
1 |
1.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Lead (Sn/Pb) |
1.5 A |
e0 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
20 mJ |
2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
50 W |
150 Cel |
SILICON |
97 ns |
MATTE TIN |
6 ohm |
2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
40 pF |
||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
320 mJ |
5.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 W |
150 Cel |
SILICON |
170 ns |
2 ohm |
5.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-218 |
85 pF |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
120 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.014 ohm |
120 A |
UPPER |
R-PUFM-X2 |
ISOLATED |
Not Qualified |
FAST SWITCHING |
TO-240 |
|||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
29 A |
260 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.2 ohm |
7.2 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-218 |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
88 mJ |
6 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.2 ohm |
6 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
TO-251 |
e3 |
|||||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
625 W |
1 |
44 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
44 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
180 W |
UNSPECIFIED |
SWITCHING |
60 V |
THROUGH-HOLE |
SQUARE |
ENHANCEMENT MODE |
1 |
320 A |
1374 mJ |
80 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.012 ohm |
80 A |
SINGLE |
S-XSFM-T3 |
Not Qualified |
HIGH RELIABILITY |
TO-254AA |
NOT SPECIFIED |
NOT SPECIFIED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.