STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STU2N62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

620 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.8 A

85 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.6 ohm

2.2 A

SINGLE

R-PSIP-T3

ULTRA-LOW RESISTANCE

TO-251

NOT SPECIFIED

NOT SPECIFIED

STFI15N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

160 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.34 ohm

11 A

SINGLE

R-PSIP-T3

ISOLATED

TO-281

NOT SPECIFIED

NOT SPECIFIED

STL3N80K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP7NC80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

290 mJ

6.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STF6N65K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.6 A

125 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.3 ohm

5.4 A

SINGLE

R-PSFM-T3

ISOLATED

ULTRA LOW-ON RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STRH100N10HYG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

192 A

954 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

87 ns

-55 Cel

169.4 ns

.035 ohm

48 A

SINGLE

S-MSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

284 pF

EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)

STU16N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TSD40N50DV

STMicroelectronics

500 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

STU11NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

SGSP471

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-218

e0

STE26N50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

104 A

26 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

26 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

VNN3NV04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

7 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1

e3

30

260

STS4DNF30L

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.06 ohm

4 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

STI30NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

900 mJ

27 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.115 ohm

27 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

TO-262AA

e3

STF7N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

6.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.98 ohm

6.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STF31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STU11N65M5

STMicroelectronics

STS20N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

20 A

DUAL

R-PDSO-G8

Not Qualified

ULTRA-LOW RESISTANCE

BUZ71CHIP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

50 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

14 A

2

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

14 A

UPPER

S-XUUC-N2

Not Qualified

FAST SWITCHING

STD90NH02LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

95 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

600 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.006 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD

TO-252AA

e3

STD4NK50Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.7 ohm

3 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251AA

e3

STA12N150K5

STMicroelectronics

TSD180N10V

STMicroelectronics

500 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

180 A

STDLED623

STMicroelectronics

SGSP141

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

.6 A

e0

SGSP255

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

STF7NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

100 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.78 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP76NF75

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.011 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STV40N05

STMicroelectronics

N-CHANNEL

SINGLE

YES

120 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

40 A

STFU11N65M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STWA70N65DM6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STLD110N10F7

STMicroelectronics

STI85NF55

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

80 A

e3

STI33N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STF57N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

960 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.063 ohm

42 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STLT30

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

110 W

175 Cel

SILICON

320 ns

TIN LEAD

.08 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

LOW THRESHOLD

TO-220AB

e0

150 pF

STL60N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

68 A

120 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0095 ohm

17 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

30

260

STH210N75F6-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

180 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0028 ohm

180 A

SINGLE

R-PSSO-G2

NOT SPECIFIED

NOT SPECIFIED

STU10P6F6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

80 mJ

10 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.116 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

STD4LN80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

160 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.6 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

BULK:2500

TO-252

e3

30

260

.3 pF

STV3NA80

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

3.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.1 A

STK2NA60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

1.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1.9 A

e0

STS9NF30L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.035 ohm

9 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

40

260

K5N07FM

STMicroelectronics

N-CHANNEL

SINGLE

NO

9 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Matte Tin (Sn)

e3

SGSP422

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

10 A

e0

STSJ20NM20N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

20 A

DUAL

R-PDSO-G8

DRAIN

Not Qualified

STU9NC80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34.4 A

400 mJ

8.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.9 ohm

8.6 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STS3C3F30L

STMicroelectronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

3.5 A

DUAL

R-PDSO-G8

3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.