STMicroelectronics Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STSJ50NH3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

150 mJ

50 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.013 ohm

12 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e4

SGSP258

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

7 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

7 A

SINGLE

R-PSIP-T3

DRAIN

70 pF

STB45N10L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

400 mJ

45 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.036 ohm

45 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

STB9NC60T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

850 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.75 ohm

9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STH55N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

600 mJ

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 W

175 Cel

SILICON

480 ns

.03 ohm

55 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218

350 pF

IRFK6H250

STMicroelectronics

625 W

6

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

90 A

STA510A13TR

STMicroelectronics

Matte Tin (Sn) - annealed

3

e3

30

245

STW70N60M2-4

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STD45NF03L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

200 mJ

45 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.018 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

e0

STU7NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

119 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

5 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

SGSP332

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

3 A

e0

STRH100N6FSY01

STMicroelectronics

N-CHANNEL

SINGLE

NO

176 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

VNP14NV04-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

STK2N80(SOT-194)

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

80 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

70 W

150 Cel

SILICON

107 ns

7 ohm

2.1 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

30 pF

STW8NA80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

175 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28.8 A

260 mJ

7.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

7.2 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247

e3

TSD200N05V

STMicroelectronics

400 W

1

200 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

200 A

STY34NB50F

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

1000 mJ

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

34 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

STU13NC50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

800 mJ

13 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

13 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STU7NB90I

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29.2 A

600 mJ

7.3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.45 ohm

7.3 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e0

STU7NA90

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

700 mJ

7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.3 ohm

7 A

SINGLE

R-PSIP-T3

Not Qualified

e3

STF3LN62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

620 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

90 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

2.5 A

SINGLE

R-PSFM-T3

ISOLATED

ULTRA-LOW RESISTANCE

TO-220AB

STV60NE06-16

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

350 mJ

10

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.016 ohm

60 A

DUAL

R-PDSO-G10

DRAIN

Not Qualified

STL4NM60

STMicroelectronics

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

STD9NM60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33.2 A

8.3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

8.3 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

STW60NE10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

500 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.022 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e0

STE40NC60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

160 A

1150 mJ

40 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

40 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STV8NA50

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

STRH100N10FSY1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

192 A

954 mJ

72 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

48 A

SINGLE

S-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

STQ3NK50ZR-AP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

2 A

120 mJ

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.3 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

STF9NK60ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

235 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STH265N6F6-2AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STS2DNE60

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8 A

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

LOW THRESHOLD

NOT SPECIFIED

NOT SPECIFIED

STFI5N95K3

STMicroelectronics

STK28N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

112 A

1000 mJ

28 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0043 ohm

28 A

DUAL

R-XDSO-N4

DRAIN

Not Qualified

e3

STS8NF30L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.026 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

TSD4M351V

STMicroelectronics

500 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

STB9NK60ZFD

STMicroelectronics

N-CHANNEL

SINGLE

YES

104 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

7 A

e3

STFI20NM65N

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STE53NA50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

212 A

1014 mJ

53 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

460 W

150 Cel

SILICON

210 ns

.085 ohm

53 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

650 pF

UL RECOGNIZED

VNV35N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

.035 ohm

DUAL

R-PDSO-G10

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STU26NM50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

740 mJ

26 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.12 ohm

26 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STF9NM60N(045Y)

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW68N65DM6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFI10N65K3

STMicroelectronics

STQ1N45K3-AP

STMicroelectronics

N-CHANNEL

SINGLE

NO

2.5 W

ENHANCEMENT MODE

1

1.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

STWA65N65DM2AG

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STK820

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

84 A

600 mJ

21 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.008 ohm

21 A

DUAL

R-XDSO-N4

SOURCE

Not Qualified

ULTRA-LOW RESISTANCE

e3

STFI24N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.