STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STFV4N150

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

350 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

STV7NA40

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

6.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.5 A

STL35NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

140 A

135 mJ

35 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

35 A

DUAL

R-XDSO-N8

Not Qualified

e0

STH45N10FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

STS7P2UH7

STMicroelectronics

SGSP477

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.17 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-218

e0

STFH13N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STWA110N65M9

STMicroelectronics

STL6P2UH7

STMicroelectronics

STW75N15

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.023 ohm

75 A

SINGLE

R-PSIP-T3

Not Qualified

TO-247AC

STS25NH3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

1300 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.005 ohm

25 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

40

260

STY80NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

447 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

74 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

e3

TSD250N05F

STMicroelectronics

500 W

1

250 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

250 A

STK2N50(SOT-194)

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

20 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

50 W

150 Cel

SILICON

97 ns

6 ohm

2 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

40 pF

STFI9N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.9 ohm

7 A

SINGLE

R-PSIP-T3

ISOLATED

TO-281

NOT SPECIFIED

NOT SPECIFIED

.65 pF

STW9NK60Z

STMicroelectronics

STV160NF03LA

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

210 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

330 mJ

160 A

10

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

160 A

DUAL

R-PDSO-G10

DRAIN

Not Qualified

STU10NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

200 mJ

8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

22 ns

-55 Cel

47 ns

Matte Tin (Sn) - annealed

.55 ohm

8 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE ENERGY RATED

TO-251AA

e3

30

260

1.2 pF

STL80N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

84 A

80 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0076 ohm

21 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

30

260

STU12N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

150 mJ

8.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.43 ohm

8.5 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251

e3

30

260

STK14N06

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

35 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

50 W

175 Cel

SILICON

165 ns

MATTE TIN

.12 ohm

14 A

SINGLE

R-PSIP-T3

Not Qualified

e3

150 pF

VNV28N04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

28 A

3

e3

30

250

STFI13N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

STU150N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

525 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0049 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

STU7NB100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

600 mJ

7.3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 ohm

7.3 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STD90N03L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

95 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

350 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0057 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOW THRESHOLD

NOT SPECIFIED

NOT SPECIFIED

STD40NE03L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

100 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.022 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

STL38DN6F7AG

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

57.7 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

40 A

50 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.027 ohm

10 A

DUAL

R-PDSO-F8

DRAIN

BULK: 3000

NOT SPECIFIED

NOT SPECIFIED

7.9 pF

AEC-Q101

STU8N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

120 mJ

7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

7 A

SINGLE

R-PSIP-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-251

NOT SPECIFIED

NOT SPECIFIED

STP7NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

100 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.78 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STFU260N4F7

STMicroelectronics

STWA40N95K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STV10NA40

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

STV7NA60

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

7.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.2 A

STFI13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

220 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.36 ohm

11 A

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

STL30N10F7

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFU23N80K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

BUZ80FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13 A

180 mJ

2.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

160 ns

MATTE TIN

4 ohm

2.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

40 pF

STFI6N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

STFH12N120K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STS4DNFS30

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

4.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.085 ohm

4.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

SGSP301

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

18 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.4 ohm

2 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e0

STB90NF03L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0065 ohm

90 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

STB4NB80FP-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

230 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.3 ohm

4 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

STL62P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

100 W

1

62 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

62 A

NOT SPECIFIED

NOT SPECIFIED

STN7NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

5 A

DUAL

R-PDSO-G3

DRAIN

Not Qualified

e3

STB45NF06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

152 A

135 mJ

38 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.03 ohm

38 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STB4NB80-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

230 mJ

4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.3 ohm

4 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.