STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STU6N90K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB9NK60ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

235 mJ

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

7 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

STULED625

STMicroelectronics

STB4NB50T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15.2 A

220 mJ

3.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.8 ohm

3.8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STH7N90

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

700 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

180 W

150 Cel

SILICON

135 ns

1.4 ohm

7.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218

150 pF

STL3N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

2.8 A

275 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

-55 Cel

1.8 ohm

.7 A

DUAL

S-PDSO-N8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

.2 pF

STP7LN80K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STRH100N10FSY302

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

192 A

954 mJ

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

48 A

SINGLE

S-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-254AA

STRH100N10FSY01

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

192 A

954 mJ

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

48 A

SINGLE

S-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

STP7NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

119 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.9 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP7NB30FP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

150 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.9 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e0

SGSP367

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.33 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e0

STK12N06L(SOT-194)

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

50 W

150 Cel

SILICON

100 ns

.15 ohm

12 A

SINGLE

R-PSFM-G3

ISOLATED

Not Qualified

LOW THRESHOLD

100 pF

STF6N90K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

MDMESH

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

8 A

e3

BUZ71A

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

50 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

70 W

175 Cel

SILICON

165 ns

145 ns

TIN LEAD

.12 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

150 pF

STRH40N6ST

STMicroelectronics

STULED602

STMicroelectronics

STW68N60M6-4

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB9NK50Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28.8 A

190 mJ

7.2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

7.2 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

STFI13NK60Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.55 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

SGSP341CHIP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

2

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.6 A

UPPER

R-XUUC-N2

Not Qualified

FAST SWITCHING

VNB20N0713TR

STMicroelectronics

N-CHANNEL

COMPLEX

YES

83 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

580 ns

1100 ns

MATTE TIN

.07 ohm

SINGLE

R-PSSO-G2

1

TO-263

30

245

STS7NF30L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

LOW THRESHOLD

e0

STA65N65DM2AG

STMicroelectronics

STFU16N65M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STU8NA80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33.2 A

320 mJ

8.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

8.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

STL80NF3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

80 A

8

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.007 ohm

20 A

BOTTOM

R-XBCC-N8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STW65N80K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP7NA60FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

260 mJ

4.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

4.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

SGSP254

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

STFW20N65M5

STMicroelectronics

STW70N65DM6-4

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STD4N20-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

76 mJ

4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.5 ohm

4 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251AA

e0

STB90NF3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.009 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

SGSP574

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

450 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

40 A

9 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.7 ohm

9 A

BOTTOM

O-MBFM-P2

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-3

e0

STP7N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

STH7NA60FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

260 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

4.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

STPLED627

STMicroelectronics

STE15N100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.77 ohm

15 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

ST160NF3LL

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

160 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

160 A

e3

TSD4M251V

STMicroelectronics

500 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

110 A

STD9N65DM6AG

STMicroelectronics

STO362N8F7AG

STMicroelectronics

STH80N05

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

900 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 W

175 Cel

SILICON

1460 ns

Tin/Lead (Sn/Pb)

.012 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218

e0

650 pF

STU7NB90

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29.2 A

600 mJ

7.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.45 ohm

7.3 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STD90NS3LLH7

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STRH40P10HYT

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

136 A

1133 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

76 ns

-55 Cel

205 ns

.075 ohm

34 A

SINGLE

S-MSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

306 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.