STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SGSP381

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

28 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e0

STD4NS25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

120 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

4 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

SGSP577

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

80 A

24 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.17 ohm

20 A

BOTTOM

O-MBFM-P2

Not Qualified

FAST SWITCHING

TO-3

e0

STO33N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW8NB90

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

700 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.45 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247

e0

STU10NA50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

145 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40.8 A

520 mJ

10.2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.6 ohm

10.2 A

SINGLE

R-PSIP-T3

Not Qualified

e3

STL38N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

90 A

660 mJ

22.5 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

22.5 A

SINGLE

S-PSSO-N4

DRAIN

NOT SPECIFIED

NOT SPECIFIED

5.8 pF

STD4NS25-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

120 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

4 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

STP7N80Z-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

6.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.1 A

STF7NK85Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

850 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22.8 A

350 mJ

5.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.8 ohm

5.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SGSP202

STMicroelectronics

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

STE47N50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

188 A

47 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.1 ohm

47 A

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

e3

UL RECOGNIZED

STP7NC70ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

238 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.38 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

MTP3055EFI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

35 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

30 W

175 Cel

SILICON

165 ns

145 ns

TIN LEAD

.15 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e0

150 pF

A2U12M12W2-F1C

STMicroelectronics

STD9N10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

30 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.27 ohm

9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

STB40NS15

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

500 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.052 ohm

40 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

STH5N90

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

300 mJ

5.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

150 Cel

SILICON

170 ns

2.4 ohm

5.3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218

85 pF

TSD4M351F

STMicroelectronics

500 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

STD4NB40T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

230 mJ

3.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

BUZ60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-220AB

e0

ADP300120W2-L

STMicroelectronics

STSJ60NH3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

60 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0075 ohm

15 A

DUAL

R-PDSO-G8

1

DRAIN

Not Qualified

LOW THRESHOLD

e4

STO65N60DM6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STK20N75F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

600 mJ

20 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.007 ohm

20 A

DUAL

R-XDSO-N4

1

DRAIN

Not Qualified

e3

30

260

STWA58N65DM2AG

STMicroelectronics

STF30N10F7

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

SGSP358CHIP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

50 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

7 A

2

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 ohm

7 A

UPPER

S-XUUC-N2

Not Qualified

FAST SWITCHING

STL33N65M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STU6NA100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

800 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.7 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

STWA70N60DM6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STWA68N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFH10N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFI15N95K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP7N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

30 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.65 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

SGSP567

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

40 A

10 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.33 ohm

10 A

BOTTOM

O-MBFM-P2

DRAIN

TO-3

e0

100 pF

STF5N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STLD220N3LLH7

STMicroelectronics

SD4933MR

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB40NF10-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

150 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

50 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

30

245

STRH40N6SY01

STMicroelectronics

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

STW77N65DM5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.043 ohm

65 A

SINGLE

R-PSFM-T3

TO-247

STP7N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

88 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.2 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

STRH100N6HYT

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

METAL

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

320 A

954 mJ

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

300 ns

-55 Cel

280 ns

.024 ohm

40 A

SINGLE

S-MSFM-P3

FAST SWITCHING

TO-254AA

470 pF

EUROPEAN SPACE AGENCY; RH - 50K Rad(Si)

STI35N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

800 mJ

27 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.098 ohm

27 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

TO-262AA

e3

SGSP152

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

5 A

e0

STSJ80N4LLF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.007 ohm

18 A

DUAL

R-PDSO-G8

Not Qualified

SCT040H65G3SAG

STMicroelectronics

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.