STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STL64DN4F7AG

STMicroelectronics

MATTE TIN

1

e3

260

SCTYA200N65G2TAG

STMicroelectronics

STI360N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STP7N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

99 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.95 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STRH8N10STF1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

32 A

456 mJ

8 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.195 ohm

8 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

STP7N20FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

30 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.65 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

SGSP330

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-220AB

e0

STRH50P6FSY1

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

200 A

932 mJ

50 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.053 ohm

50 A

SINGLE

S-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-254AA

STU11NC60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

400 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

11 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STW60N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

720 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.025 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247

e0

STFI9N60M2

STMicroelectronics

PD55003-E-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

31.7 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

2.5 A

STP7NE10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

40 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

STF85N12F7

STMicroelectronics

STRH13N20SY3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

52 A

200 mJ

13 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.22 ohm

13 A

DUAL

R-PDSO-N3

Not Qualified

HIGH RELIABILITY

STO342N10F7AG

STMicroelectronics

STS8DN3LLH5

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.022 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

STT5NF20V

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.045 ohm

5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

STU2LN60K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

80 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

STB40NE03L-20

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

40 A

e0

STF8N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

STB40NF10L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

430 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.036 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

STE180N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

540 A

720 mJ

180 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.007 ohm

180 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

UL RECOGNIZED

STL32N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

550 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

104 A

500 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.115 ohm

26 A

DUAL

S-PDSO-N5

DRAIN

STH260N4LF7-6

STMicroelectronics

BUZ32CHIP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

9.5 A

2

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

9.5 A

UPPER

S-XUUC-N2

Not Qualified

FAST SWITCHING

STB45N10L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

400 mJ

45 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.036 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STRH100N10FSY3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

UNSPECIFIED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

288 A

824 mJ

72 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.028 ohm

72 A

SINGLE

R-XSFM-T3

Not Qualified

HIGH RELIABILITY, AVALANCHE RATED

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

STW8N80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

800 mJ

8.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

8.2 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247

e3

STD4N62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

620 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15.2 A

3.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.95 ohm

3.8 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

SGSP230

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

2.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

e0

MTP3055E

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

50 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

70 W

175 Cel

SILICON

165 ns

145 ns

TIN LEAD

.15 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e0

150 pF

STQ3N45K3-AP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2.5 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

2.4 A

.6 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.8 ohm

.6 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

STRH8N10ST

STMicroelectronics

SEF120

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

SGSP563

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

250 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

40 A

10 A

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

BOTTOM

O-MBFM-P2

DRAIN

TO-3

100 pF

STF35N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

800 mJ

27 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.098 ohm

27 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STH45N10

STMicroelectronics

N-CHANNEL

SINGLE

NO

180 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

STB40N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

230 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.045 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

STY105NM50N

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP75NF68

STMicroelectronics

N-CHANNEL

SINGLE

NO

190 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

80 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STH5NA90FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.2 A

520 mJ

3.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

3.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

SGSP572

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

30 A

e0

STF34N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

28 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

6.3 pF

STV50N05

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

50 A

STH6N100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

850 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

180 W

150 Cel

SILICON

120 ns

Tin/Lead (Sn/Pb)

2 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218

e0

130 pF

STE24NA100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

96 A

2000 mJ

24 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.385 ohm

24 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

STRH60N20FSY1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

UNSPECIFIED

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

360 mJ

53 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

53 A

SINGLE

R-XSFM-T3

Not Qualified

HIGH RELIABILITY, AVALANCHE RATED

TO-254AA

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.