STMicroelectronics Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STWA72N60DM6AG

STMicroelectronics

RF5L05500CB4

STMicroelectronics

Nickel/Gold/Cobalt (Ni/Au/Co)

3

NOT SPECIFIED

260

A2U12M12W2-F2

STMicroelectronics

Matte Tin (Sn)

e3

NOT APPLICABLE

NOT APPLICABLE

STW75N65DM6-4

STMicroelectronics

SCT070H120G3AG

STMicroelectronics

SCT040HU65G3AG

STMicroelectronics

SCT055HU65G3AG

STMicroelectronics

STL325N4LF8AG

STMicroelectronics

ADP480120W3

STMicroelectronics

MATTE TIN

e3

ADP360120W3

STMicroelectronics

MATTE TIN

e3

ADP280120W3

STMicroelectronics

SCTHS250N65G3AG

STMicroelectronics

SCT012H90G3AG

STMicroelectronics

SH32N65DM6AG

STMicroelectronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

208 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

120 A

778 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.097 ohm

32 A

DUAL

R-PDSO-G9

3

e3

30

245

.3 pF

AEC-Q101

SCTHS300N75G3AG

STMicroelectronics

SCTHS250N65G3TAG

STMicroelectronics

SCT012W90G3AG

STMicroelectronics

STO52N60DM6

STMicroelectronics

SCT040H120G3AG

STMicroelectronics

SCT018H65G3AG

STMicroelectronics

SCT025H120G3AG

STMicroelectronics

SCT040W120G3AG

STMicroelectronics

SCTH100N120G2-AG

STMicroelectronics

STW65N023M9-4

STMicroelectronics

SCT070W120G3-4AG

STMicroelectronics

SCT040W120G3-4AG

STMicroelectronics

STWA65N023M9

STMicroelectronics

STWA60N043DM9

STMicroelectronics

SCT060HU75G3AG

STMicroelectronics

SGT65R65AL

STMicroelectronics

A1F25M12W2-F1

STMicroelectronics

ADP61075W3

STMicroelectronics

SCTHS250N65G2G

STMicroelectronics

ADP46075W3

STMicroelectronics

STP25N06FI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

100 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 W

175 Cel

SILICON

175 ns

MATTE TIN

.065 ohm

16 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

200 pF

STB19NB20T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

580 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.18 ohm

19 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

STK3NA60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10.8 A

40 mJ

2.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

4 ohm

2.7 A

SINGLE

R-PSIP-T3

Not Qualified

e0

STP5N95K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

70 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

28 ns

-55 Cel

57 ns

2.5 ohm

3.5 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE ENERGY RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

1 pF

STW160N75F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.0045 ohm

120 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AB

e3

STL210N4LF7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

480 A

450 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0025 ohm

120 A

DUAL

R-PDSO-F8

DRAIN

BULK: 3000

60 pF

AEC-Q101

STW19NM60N

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB50NH02LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

200 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0135 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

STP8NC60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

300 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB34NM65ND

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STD70NH02L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

24 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

360 mJ

60 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

60 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

LOW THRESHOLD

TO-251

e3

STD25NE03LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.03 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

e3

STB15N25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

40 mJ

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STD8NF25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

110 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.42 ohm

8 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.