Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
80 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
700 mJ |
30 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.013 ohm |
30 A |
DUAL |
R-XDSO-N8 |
Not Qualified |
|||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.8 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH VOLTAGE, FAST SWITCHING |
TO-218 |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8.8 A |
2.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.25 ohm |
2.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
LOW THRESHOLD |
e3 |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
550 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 W |
150 Cel |
SILICON |
150 ns |
.85 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
FRED FET |
TO-218 |
140 pF |
||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
METAL |
SWITCHING |
500 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
38 A |
9.6 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.6 ohm |
9.6 A |
BOTTOM |
O-MBFM-P2 |
Not Qualified |
HIGH VOLTAGE, FAST SWITCHING |
TO-3 |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
340 mJ |
22 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.13 ohm |
22 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.01 ohm |
12.5 A |
DUAL |
R-XDSO-N4 |
SOURCE |
Not Qualified |
ULTRA-LOW RESISTANCE |
e3 |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28.8 A |
190 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.85 ohm |
7.2 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
104 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
235 mJ |
7 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.95 ohm |
7 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
400 mJ |
80 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.009 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
TO-263AB |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
525 mJ |
30 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.0035 ohm |
30 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e4 |
30 |
260 |
|||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.5 ohm |
5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH VOLTAGE, FAST SWITCHING |
TO-220AB |
e0 |
||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
144 A |
100 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.14 ohm |
36 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
500 mJ |
22 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.139 ohm |
22 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE ENERGY RATED |
TO-220AB |
e3 |
|||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
176 W |
METAL |
SWITCHING |
60 V |
PIN/PEG |
SQUARE |
ENHANCEMENT MODE |
1 |
320 A |
954 mJ |
40 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
300 ns |
-55 Cel |
280 ns |
.024 ohm |
40 A |
SINGLE |
S-MSFM-P3 |
FAST SWITCHING |
TO-254AA |
470 pF |
EUROPEAN SPACE AGENCY; RH - 50K Rad(Si) |
||||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
900 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 W |
175 Cel |
SILICON |
1570 ns |
970 ns |
TIN LEAD |
.014 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-247 |
e0 |
650 pF |
|||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
700 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
37.6 A |
400 mJ |
9.4 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.75 ohm |
9.4 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e0 |
|||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
PLASTIC/EPOXY |
620 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
100 mJ |
4 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
2.5 ohm |
4 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
TO-281 |
||||||||||||||||||||||||||
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
20 mJ |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
1.1 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
230 mJ |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3.3 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
|||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE, FAST SWITCHING |
e0 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5.2 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
1000 mJ |
20 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0098 ohm |
20 A |
DUAL |
R-XDSO-N4 |
1 |
SOURCE |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
600 mJ |
80 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.009 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOW THRESHOLD |
TO-252 |
e3 |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
86 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
1.2 ohm |
4.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
.7 pF |
|||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5.2 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
136 A |
30 A |
10 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0031 ohm |
34 A |
DUAL |
R-XDSO-N10 |
SOURCE |
Not Qualified |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
25 W |
1 |
6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
6 A |
e3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
600 mJ |
180 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
3 ohm |
180 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13 A |
180 mJ |
2.6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
100 W |
150 Cel |
SILICON |
160 ns |
MATTE TIN |
4 ohm |
3.4 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
40 pF |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
36 A |
9 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.017 ohm |
9 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
FAST SWITCHING |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
PLASTIC/EPOXY |
SWITCHING |
620 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16.8 A |
120 mJ |
4.2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.6 ohm |
4.2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
ULTRA LOW-ON RESISTANCE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
76 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.5 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
TO-252 |
|||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
50 mJ |
11 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
30 W |
175 Cel |
SILICON |
165 ns |
145 ns |
TIN LEAD |
.12 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e0 |
150 pF |
|||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
15 W |
ENHANCEMENT MODE |
1 |
5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Lead (Sn/Pb) |
5 A |
e0 |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
104 A |
740 mJ |
26 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.135 ohm |
26 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
40 W |
ENHANCEMENT MODE |
1 |
4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) |
4 A |
e3 |
||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
38 A |
450 mJ |
9.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.8 ohm |
9.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
850 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26.7 A |
350 mJ |
6.7 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
1.4 ohm |
6.7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
80 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
60 W |
150 Cel |
SILICON |
.11 ohm |
17 A |
SINGLE |
R-PSFM-G3 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
135 W |
ENHANCEMENT MODE |
1 |
5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) |
5 A |
e3 |
||||||||||||||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
30 W |
150 Cel |
SILICON |
110 ns |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW THRESHOLD |
TO-220AB |
e0 |
100 pF |
||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50.4 A |
800 mJ |
12.6 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.45 ohm |
12.6 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
650 mJ |
24 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.119 ohm |
24 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
AVALANCHE ENERGY RATED |
TO-262AA |
e3 |
||||||||||||||||||||
STMicroelectronics |
500 W |
4 |
90 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
90 A |
|||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
70 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
165 mJ |
80 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.006 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
ENHANCEMENT MODE |
1 |
2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
2 A |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.