STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STF6N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

STL70N4LLF5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

UNSPECIFIED

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

72 A

70 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.009 ohm

18 A

DUAL

R-XDSO-F5

1

DRAIN

Not Qualified

e3

30

260

STB9NK70ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

230 mJ

7.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

7.5 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

STH60N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

720 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 W

175 Cel

SILICON

480 ns

.025 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218

350 pF

STL33N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

SGSP301CHIP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2 A

2

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

1.4 ohm

2 A

UPPER

R-XUUC-N2

Not Qualified

FAST SWITCHING

STW70N65M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB9NB65-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

850 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

9 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

STL6NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

UNSPECIFIED

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

23 A

65 mJ

5.7 A

12

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.92 ohm

1 A

QUAD

S-XQCC-N12

DRAIN

Not Qualified

STP7NK40Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.6 A

130 mJ

5.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

5.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

TSD40N50DF

STMicroelectronics

500 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

PD85035-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

STF33N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

780 mJ

24 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.14 ohm

24 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SGSP239

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

1.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

8.5 ohm

1.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

e0

STU6N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

100 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.35 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

.65 pF

STK22N05

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

100 mJ

22 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

60 W

175 Cel

SILICON

175 ns

Matte Tin (Sn)

.065 ohm

22 A

SINGLE

R-PSIP-T3

Not Qualified

e3

200 pF

BUZ74A

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4 ohm

2 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-220AB

e0

STF9HN65M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW8NB80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

680 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.6 ohm

7.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STL36N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFI34N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

28 A

SINGLE

R-PSFM-T3

ISOLATED

TO-281

NOT SPECIFIED

NOT SPECIFIED

6.3 pF

STI400N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STP70N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0195 ohm

65 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STS9P2UH7

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

NOT SPECIFIED

NOT SPECIFIED

STS2NF100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

200 mJ

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.26 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

BUZ74

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

2.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

2.4 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-220AB

e0

STU4N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

110 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2.6 ohm

2.5 A

SINGLE

R-PSFM-T3

1

ULTRA-LOW RESISTANCE

TO-220AB

e3

30

260

STFU9N60M2

STMicroelectronics

STW9NA80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36.4 A

415 mJ

9.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1 ohm

9.1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e0

STFW12N120K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

63 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.69 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STK2N80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

80 mJ

2.1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

70 W

150 Cel

SILICON

107 ns

TIN LEAD

7 ohm

2.1 A

SINGLE

R-PSIP-T3

Not Qualified

e0

30 pF

APP1165UM2

STMicroelectronics

SGSP341

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

18 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.6 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e0

STFW12N150K5

STMicroelectronics

STL7LN65K5AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

650 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

20 A

200 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.15 ohm

5 A

DUAL

R-PDSO-F5

DRAIN

BULK: 3000

.5 pF

AEC-Q101

STFI26N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STU85N3LH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

165 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0071 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

TO-251

e3

STK822

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

152 A

500 mJ

38 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.003 ohm

38 A

DUAL

R-XDSO-N4

SOURCE

Not Qualified

ULTRA-LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

STRH30N20SY3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

52 A

200 mJ

13 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.22 ohm

13 A

DUAL

R-PDSO-N3

Not Qualified

HIGH RELIABILITY

STQ3NK50ZR

STMicroelectronics

N-CHANNEL

SINGLE

NO

3 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

STGW10M65DF2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STV12N20

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

STU10NC70ZI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37.6 A

400 mJ

9.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.75 ohm

9.4 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e3

STU13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

200 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.36 ohm

11 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

SGSP461

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-218

e0

STW80NE06-10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

350 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.01 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e0

STF7N60DM2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STBLED627

STMicroelectronics

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.