STH210N75F6-2 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STH210N75F6-2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
Datasheet	STH210N75F6-2 Datasheet
In Stock	4,059

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	180 A
Maximum Pulsed Drain Current (IDM):	720 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	300 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0028 ohm
Other Names:	-497-11251-2 497-11251-6 -497-11251-1 -497-11251-6 497-11251-2 STH210N75F62 497-11251-1
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	75 V
Maximum Drain Current (Abs) (ID):	180 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,059	-	-

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