STMicroelectronics Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STP105N3LL

STMicroelectronics

N-CHANNEL

SINGLE

NO

140 W

1

150 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

150 A

NOT SPECIFIED

NOT SPECIFIED

STP50NF25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

160 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.069 ohm

45 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STD12NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

140 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.1 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STF18NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

350 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.285 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STL90N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

96 A

90 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0073 ohm

24 A

DUAL

R-XDSO-N5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

260

STP15N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.375 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

STD3PK50Z

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.2 A

2.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

4 ohm

2.8 A

SINGLE

R-PSSO-G2

1

TO-252

e3

30

260

STL13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

93 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.385 ohm

1.9 A

DUAL

R-PDSO-N5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STP57N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

960 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.063 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STW13NK60Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

400 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.55 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STW38N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

660 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.095 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

STP10NK80ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

290 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.9 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

SCT020H120G3AG

STMicroelectronics

STB28N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

760 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STB32N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

650 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.119 ohm

24 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE ENERGY RATED

TO-263AB

e3

30

245

STB60NF06L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

320 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

STB9NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

220 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.3 ohm

8 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED

e3

30

245

STD20NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

300 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.04 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

STD2N80K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW9NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

220 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.3 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247AC

e3

SCTL90N65G2V

STMicroelectronics

STB12NM50T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

Matte Tin (Sn) - annealed

.35 ohm

12 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

30

245

STB270N04

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

330 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

1000 mJ

160 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0025 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

STD3N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

65 mJ

2.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

2.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

260

STD7N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

88 mJ

6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

STW10NK60Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

300 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.75 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

STY145N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

552 A

2420 mJ

138 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.015 ohm

138 A

SINGLE

R-PSIP-T3

1

e3

STD18N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

210 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.22 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

260

STD8N60DM2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STH275N8F7-6AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

315 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

775 mJ

180 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0021 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

e3

260

236 pF

AEC-Q101

STP30NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

140 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STB30N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

500 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.139 ohm

22 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE ENERGY RATED

TO-263AB

e3

30

245

STB45N40DM2AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.072 ohm

38 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STF12N120K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STF7N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL9P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

36 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0225 ohm

9 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

235 pF

STP110N7F6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW88N65M5-4

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

SCTH70N120G2V-7

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB150NF55T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

850 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.006 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STF20N90K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL33N60DM2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL45N65M5

STMicroelectronics

MATTE TIN

3

e3

260

STS10P4LLF6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

2.7 W

150 Cel

SILICON

.015 ohm

10 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

238.5 pF

STD25N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.035 ohm

25 A

SINGLE

R-PSSO-G2

DRAIN

BULK: 2500

TO-252

NOT SPECIFIED

NOT SPECIFIED

19 pF

STF42N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

950 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.079 ohm

33 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STFW40N60M2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STL56N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

60 A

56 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0112 ohm

15 A

DUAL

R-PDSO-F5

1

DRAIN

ULTRA-LOW RESISTANCE

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.