STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

VNV35N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

.035 ohm

DUAL

R-PDSO-G10

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STB10N95K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

122 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STB18N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

135 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.28 ohm

13 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STD15N50M2AG

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STD16NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

AMPLIFIER

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

178 mJ

16 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.07 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STL100N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

76 A

400 mJ

80 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0073 ohm

70 A

DUAL

R-PDSO-F5

1

DRAIN

ULTRA LOW RESISTANCE

e3

260

STL36N55M5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STS5P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

NOT SPECIFIED

NOT SPECIFIED

STT4P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1.6 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.09 ohm

4 A

DUAL

R-PDSO-G6

1

e3

260

52 pF

STW26NM50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

740 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.12 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STW40N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.088 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

STB13N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

148 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

.45 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

245

STB60NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

360 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

30

245

STD10N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

110 mJ

7.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.6 ohm

7.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

.84 pF

STD11N50M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

85 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

STD36P4LLF6

STMicroelectronics

P-CHANNEL

SINGLE

YES

60 W

1

36 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

STD4NK50ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2.7 ohm

3 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

STK22N6F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

800 mJ

22 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.006 ohm

22 A

DUAL

R-XDSO-N4

SOURCE

Not Qualified

ULTRA-LOW RESISTANCE

e3

STL180N6F7

STMicroelectronics

MATTE TIN

1

e3

260

STL52N25M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

112 A

230 mJ

28 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.076 ohm

4.2 A

DUAL

R-PDSO-F5

1

DRAIN

ULTRA LOW-ON RESISTANCE

225

STL8DN6LF6AG

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

128 A

120 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.031 ohm

32 A

DUAL

R-PDSO-F8

1

DRAIN

e3

260

60 pF

AEC-Q101

STN1NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

70 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

1.5 ohm

1 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

STP120NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

550 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STP24NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

220 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STP33N60M6

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STP62NS04Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

33 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

248 A

500 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.015 ohm

62 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STP80NF55-08AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

1000 mJ

80 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.008 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STW21N150K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW48N60M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

NOT SPECIFIED

NOT SPECIFIED

SCT011H75G3AG

STMicroelectronics

STB46N30M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

212 A

550 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

53 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STD13N60DM2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

340 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

17.1 ns

-55 Cel

53.1 ns

.365 ohm

11 A

SINGLE

R-PDSO-G2

DRAIN

AVALANCHE ENERGY RATED

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

.9 pF

STD70N10F4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

120 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0195 ohm

60 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

30

260

STF26NM60N-H

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

610 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.165 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STH240N75F3-6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

600 mJ

180 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.003 ohm

180 A

SINGLE

R-PSSO-G6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STL130N8F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

560 A

515 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0036 ohm

130 A

DUAL

R-PDSO-F5

1

DRAIN

ULTRA LOW RESISTANCE

e3

260

STL45N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

72 A

150 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.024 ohm

18 A

DUAL

R-PDSO-F5

1

DRAIN

e3

260

AEC-Q101

STL76DN4LF7AG

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

160 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.012 ohm

40 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STP11N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

110 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.68 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

BULK: 2500

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

.9 pF

STP24N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

180 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP315N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

720 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.0027 ohm

180 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STP9NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

220 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.3 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STS1DNC45

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.6 A

30 mJ

.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.5 ohm

.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

225

STS7PF30L

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.028 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STW20N90K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW72N60DM2AG

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB100NF03L-03-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

1900 mJ

100 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0045 ohm

100 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-262AA

e3

STB36NM60ND

STMicroelectronics

N-CHANNEL

SINGLE

YES

190 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

29 A

1

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.