STMicroelectronics Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STL42P4LLF6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

168 A

42 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.026 ohm

42 A

DUAL

R-PDSO-F5

1

DRAIN

e3

260

STD11N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

130 mJ

9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.48 ohm

9 A

SINGLE

R-PSSO-G2

TO-252

NOT SPECIFIED

NOT SPECIFIED

STD2N105K5

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

STL115N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

428 A

490 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.006 ohm

75 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STB270N4F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

330 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

1000 mJ

160 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.002 ohm

160 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STH270N8F7-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

315 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

1160 mJ

180 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0021 ohm

180 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

STW56N60DM2

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STW8N120K5

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB38N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

660 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.095 ohm

30 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

e3

30

245

STW62N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

1400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.049 ohm

46 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STP120N4F6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

394 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0043 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STD4NK80ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

190 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

3.5 ohm

3 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

STH6N95K5-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

950 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.25 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

245

STP7NK80ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20.8 A

210 mJ

5.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

5.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STL8N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

800 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

18 A

114 mJ

4.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

4.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

260

VNB20N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

83 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

580 ns

1100 ns

.07 ohm

SINGLE

R-PSSO-G2

TO-263

STL40DN3LLH5

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

44 A

40 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 ohm

11 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STP60NF06LFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

320 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

60 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW THRESHOLD, AVALANCHE RATED

TO-220AB

e3

STW20NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

850 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.27 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

VNP35N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSFM-T3

TO-220AB

AEC-Q101

STH260N6F6-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

180 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.002 ohm

180 A

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SCT070HU120G3AG

STMicroelectronics

STB30NF20L

STMicroelectronics

Matte Tin (Sn) - annealed

1

e3

30

245

STB80NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

210 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

350 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.015 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STW28NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

430 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.158 ohm

21 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

STB80N20M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

260 A

61 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

65 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

STB75NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

205 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.034 ohm

75 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

30

245

STE48NM50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

810 mJ

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

48 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STP150N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

650 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

80 pF

AEC-Q101

STW13NK100Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

700 mJ

13.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.7 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

SCTW70N120G2V

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STB120NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

312 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

550 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STD15NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

75 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.08 ohm

15 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STD4NK60ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

120 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2 ohm

4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

STD5N52U

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

170 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.5 ohm

4.4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

30

260

STD60NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

350 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.016 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

STB24N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

180 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STB33N60DM2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

570 mJ

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

24 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STB33N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

780 mJ

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.14 ohm

24 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STD16NF06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

200 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.085 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

TO-252AA

e3

30

260

STP150N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

495 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

67 pF

STE145N65M5

STMicroelectronics

STL12P6F6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

48 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.16 ohm

12 A

DUAL

S-PDSO-F8

DRAIN

BULK; 3000

NOT SPECIFIED

NOT SPECIFIED

20 pF

STD13NM60N-H

STMicroelectronics

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

11 A

1

e3

30

260

STD35NF06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

280 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.02 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

STD40P8F6AG

STMicroelectronics

NOT SPECIFIED

NOT SPECIFIED

STFW4N150

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

350 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

STP11NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.