Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
10.1 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.142 ohm |
2 A |
DUAL |
R-PDSO-F6 |
1 |
260 |
16 pF |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
255 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
627 A |
413 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0023 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.071 ohm |
4 A |
DUAL |
R-PDSO-F3 |
40 pF |
||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
375 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
480 A |
466 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0037 ohm |
160 A |
SINGLE |
S-PSSO-G2 |
DRAIN |
610 pF |
AEC-Q101 |
|||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
150 A |
206 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0149 ohm |
50 A |
DUAL |
S-PDSO-F5 |
DRAIN |
|||||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
78 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
200 A |
468 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0027 ohm |
60 A |
DUAL |
S-PDSO-F5 |
DRAIN |
1550 pF |
||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.4 ohm |
2 A |
DUAL |
R-PDSO-F3 |
25 pF |
AEC-Q101 |
|||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.4 ohm |
2 A |
DUAL |
R-PDSO-F3 |
25 pF |
AEC-Q101 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
22 pF |
AEC-Q101 |
||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
78 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
200 A |
453 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0023 ohm |
60 A |
DUAL |
S-PDSO-F8 |
DRAIN |
100 pF |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
22 pF |
AEC-Q101 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
123 A |
338 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.098 ohm |
30.8 A |
SINGLE |
S-PSSO-N4 |
DRAIN |
|||||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
90 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
120 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0174 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
410 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Toshiba |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
57 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
61 A |
53 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.033 ohm |
18 A |
DUAL |
S-PDSO-F8 |
DRAIN |
50 pF |
||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
132 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
180 A |
138 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0069 ohm |
60 A |
DUAL |
S-PDSO-F8 |
DRAIN |
685 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.075 ohm |
4 A |
DUAL |
R-PDSO-F3 |
60 pF |
|||||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.075 ohm |
4 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
60 pF |
|||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
14 A |
9.1 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.069 ohm |
3.5 A |
DUAL |
S-PDSO-N6 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
150 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
61 A |
53 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.033 ohm |
18 A |
DUAL |
S-PDSO-F5 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.038 ohm |
6 A |
DUAL |
R-PDSO-F3 |
20 pF |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
170 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
500 A |
150 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0037 ohm |
90 A |
DUAL |
S-PDSO-F8 |
DRAIN |
59 pF |
||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
57 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
22 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0368 ohm |
25 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
69 pF |
AEC-Q101 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
308 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.7 ohm |
6 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
10 pF |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
180 mJ |
5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.7 ohm |
5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
|||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
95 A |
38 mJ |
43 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.015 ohm |
43 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
|||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
170 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
450 A |
287 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0013 ohm |
150 A |
DUAL |
S-PDSO-F8 |
DRAIN |
490 pF |
AEC-Q101 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
170 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
450 A |
287 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0013 ohm |
150 A |
DUAL |
S-PDSO-F8 |
DRAIN |
490 pF |
AEC-Q101 |
|||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
454 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
15 pF |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
205 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
377 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0019 ohm |
160 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
490 pF |
AEC-Q101 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
205 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
377 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.00205 ohm |
160 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
490 pF |
AEC-Q101 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
158 mJ |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.7 ohm |
4 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
|||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
375 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
566 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.00331 ohm |
160 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
730 pF |
AEC-Q101 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.