Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

2SJ377TE16R

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

20 W

SILICON

.28 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

2SK1117

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

100 W

SILICON

1.25 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2SK1118

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

45 W

SILICON

TIN LEAD

1.25 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e0

2SK2613

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

910 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.7 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK2613(F)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

SSM3J331R,LF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.075 ohm

4 A

DUAL

R-PDSO-F3

60 pF

SSM3K341R,LXHF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

28.9 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.036 ohm

6 A

DUAL

R-PDSO-F3

35 pF

AEC-Q101

SSM3K341R,LXHF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

28.9 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.036 ohm

6 A

DUAL

R-PDSO-F3

35 pF

AEC-Q101

SSM6J507NU,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.032 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

185 pF

TJ60S06M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

132 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0145 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

30

260

530 pF

AEC-Q101

TK100E08N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

568 A

278 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0032 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK100E08N1,S1X

Toshiba

TK16V60W,LVQ

Toshiba

TK20G60W,RVQ

Toshiba

TK20J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

190 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

TK72E12N1,S1X

Toshiba

TPCA8053-H(T2L1,VM

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

45 A

16 mJ

15 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.024 ohm

15 A

DUAL

S-PDSO-F5

DRAIN

90 pF

TPH11006NL,LQ(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

81 A

33 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.017 ohm

40 A

DUAL

S-PDSO-F5

DRAIN

30

260

TPH1R104PB

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

132 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

360 A

140 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.00196 ohm

120 A

DUAL

S-PDSO-F8

DRAIN

320 pF

AEC-Q101

TPH1R104PB,L1XHQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

132 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

360 A

140 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.00196 ohm

120 A

DUAL

S-PDSO-F8

DRAIN

320 pF

AEC-Q101

TW045N120C,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

182 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

114 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.059 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

3.2 pF

XPN3R804NC,L1XHQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

80 A

177 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

40 A

DUAL

S-PDSO-F8

DRAIN

110 pF

AEC-Q101

2SK1062(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

2SK2036(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM3J372R,LXHF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.042 ohm

6 A

DUAL

R-PDSO-F3

65 pF

AEC-Q101

SSM3J372R,LXHF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.042 ohm

6 A

DUAL

R-PDSO-F3

65 pF

AEC-Q101

SSM6J507NU,LF(T

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

30 A

10 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.032 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

SSM6N7002FU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

TK040N65Z,S1F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

228 A

702 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

57 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

4 pF

TK040N65Z,S1F(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

228 A

702 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

57 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

4 pF

TK100E10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

434 A

222 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0034 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK16A60W,S4VX

Toshiba

TK39N60W5,S1VF

Toshiba

TK3P80E

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

118 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4.9 ohm

3 A

SINGLE

R-PSSO-G2

DRAIN

TK40E06N1,S1X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

67 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

40 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0104 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

40 pF

TK5P50D(T6RSS-Q)

Toshiba

TK7P50D(T6RSS-Q)

Toshiba

TK9J90E,S1E

Toshiba

TPH11003NL,LQ

Toshiba

TPH1110FNH,L1Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

SQUARE

ENHANCEMENT MODE

1

32 A

58 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.112 ohm

10 A

DUAL

S-PDSO-F5

DRAIN

50 pF

TPH1R712MD

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

SQUARE

ENHANCEMENT MODE

1

200 A

468 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0027 ohm

60 A

DUAL

S-PDSO-F5

DRAIN

1550 pF

TPN22006NH,LQ

Toshiba

TPN22006NH,LQ(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

18 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

42 A

21 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.064 ohm

9 A

DUAL

S-PDSO-F8

DRAIN

14 pF

XPN7R104NC,L1XHQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

60 A

83 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0142 ohm

20 A

DUAL

S-PDSO-F8

DRAIN

90 pF

AEC-Q101

3SK293(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

1

.03 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

MP4410

Toshiba

N-CHANNEL

COMPLEX

NO

2.2 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

28 W

150 Cel

SILICON

.31 ohm

5 A

SINGLE

R-PSIP-T12

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3K16FU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

30

260

SSM3K361TU,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

9.1 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.069 ohm

3.5 A

DUAL

R-PDSO-F3

22 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.