Toshiba Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SSM6K809R,LXHF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

24 A

19.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.036 ohm

6 A

DUAL

R-PDSO-F6

35 pF

AEC-Q101

SSM6L820R,LXHF

Toshiba

SSM6N16FU(TE85L,F)

Toshiba

N-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6N813R,LXHF

Toshiba

TJ30S06M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.028 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

270 pF

AEC-Q101

TJ80S04M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

148 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0079 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

740 pF

AEC-Q101

TK10A60D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

363 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK10A80W,S4X

Toshiba

TK10E80W,S1X

Toshiba

TK10P50W,RQ

Toshiba

TK11P65W,RQ

Toshiba

TK12A60W,S4VX

Toshiba

TK12E60U

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

144 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

69 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK12P60W,RVQ(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

140 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.34 ohm

11.5 A

SINGLE

R-PSSO-G2

DRAIN

2.8 pF

TK13P25D,RQ

Toshiba

TK155A65Z,S4X

Toshiba

TK16A60W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63.2 A

231 mJ

15.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

15.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

4 pF

TK16A60W5,S4VX(M

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63.2 A

231 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

15.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

4 pF

TK16J60W5,S1VQ

Toshiba

TK17E80W,S1X

Toshiba

TK19A50W,S5X

Toshiba

TK1K2A60F,S4X

Toshiba

TK20A60U(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

144 mJ

20 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

20 A

SINGLE

R-PSFM-T3

150 pF

TK20A60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.155 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

7 pF

TK25E60X5,S1X

Toshiba

TK25N60X,S1F

Toshiba

TK28N65W,S1F

Toshiba

TK28N65W5,S1F

Toshiba

NOT SPECIFIED

NOT SPECIFIED

TK290P60Y,RQ

Toshiba

TK2R9E10PL,S1X

Toshiba

TK31N60W5,S1VF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

123 A

437 mJ

30.8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.099 ohm

30.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

9.5 pF

TK31V60W,LVQ

Toshiba

TK31V60W5,LVQ

Toshiba

TK35A08N1,S4X

Toshiba

TK35N65W5,S1F

Toshiba

TK40A10N1,S4X

Toshiba

TK40S06N1L,LQ

Toshiba

TK42A12N1,S4X

Toshiba

TK4R1A10PL,S4X

Toshiba

TK55S10N1,LQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

157 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

165 A

93 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0065 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

30

260

210 pF

AEC-Q101

TK560P60Y,RQ

Toshiba

TK56E12N1,S1X

Toshiba

TK62N60X,S1F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

247 A

698 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

61.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

TK65G10N1,RQ

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

283 A

93 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0045 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

42 pF

TK7P60W,RVQS

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

92 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

1.7 pF

TK7S10N1Z,LQ

Toshiba

TK8A25DA,S4X

Toshiba

TK8A50D(STA4,Q,M)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

165 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.85 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.