Toshiba - TK20A60U(Q)

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TK20A60U(Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK20A60U(Q)
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (ID): 20 A; Terminal Form: THROUGH-HOLE;
Datasheet TK20A60U(Q) Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 144 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 150 pF
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Maximum Power Dissipation (Abs): 45 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 20 A
Maximum Drain-Source On Resistance: .19 ohm
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