Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRLL014PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	100 mJ	2.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.2 ohm	2.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e3	30	260
SIR470DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	125 mJ	60 A	8	SMALL OUTLINE		METAL SEMICONDUCTOR	104 W	150 Cel	SILICON	135 ns	-55 Cel	225 ns	MATTE TIN	.00265 ohm	60 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
SQJ459EP-T2_BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	43 ns	-55 Cel	177 ns		.018 ohm	52 A	SINGLE	R-PSSO-G4		DRAIN							312 pF
IRFD9110	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A	140 mJ	.7 A	4	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	1.2 ohm	.7 A	DUAL	R-PDIP-T4			Not Qualified	AVALANCHE RATED		e0
SI7119DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	200 V	C BEND	SQUARE	ENHANCEMENT MODE	1	5 A	1.25 mJ	3.8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	1.1 ohm	1.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified				30	260
SI7898DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	25 A		3 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.085 ohm	3 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7998DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	60 A		30 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0093 ohm	15 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3
SIJ478DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	45 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.008 ohm	60 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SUM90142E-GE3	Vishay Intertechnology																									Tin (Sn)					1					e3	30	260
IRF620PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	110 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.8 ohm	5.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRFR120TRPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.27 ohm	7.7 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				34 pF
IRFR9024TRPBF-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	300 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.28 ohm	8.8 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				65 pF
SIR804DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0078 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SQJA86EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	84 A	20 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.019 ohm	30 A	SINGLE	R-PSSO-G4	1	DRAIN				e3		260		AEC-Q101
SI2387DS-T1-GE3	Vishay Intertechnology																									MATTE TIN					1					e3	30	260
SI3445DV	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.042 ohm	5.6 A	DUAL	R-PDSO-G6			Not Qualified			e0
SI7117DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	12.5 W	UNSPECIFIED	SWITCHING	150 V	C BEND	SQUARE	ENHANCEMENT MODE	1	2.2 A	1.01 mJ	2.17 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.3 ohm	1.1 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7456CDP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	11.2 mJ	27.5 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	.0235 ohm	10.3 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified
IRFP23N50LPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	370 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	92 A	410 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.235 ohm	23 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3	30	260
IRFR9220PBF-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	310 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			1.5 ohm	3.6 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				33 pF
SIS890DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	5 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0235 ohm	30 A	DUAL	S-PDSO-C5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
IRF740PBF-BE3	Vishay Intertechnology																									Matte Tin (Sn)										e3
IRFP31N50LPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	124 A	460 mJ	31 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.18 ohm	31 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3	30	260	59 pF
SI7322DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	18 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	3.8 W	150 Cel	SILICON	30 ns	-55 Cel	35 ns	MATTE TIN	.058 ohm	18 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	25 pF
SI7454DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4.8 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	31 mJ	5 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.034 ohm	5 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7884BDP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	54 mJ	58 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	66 ns	-55 Cel	77 ns	Matte Tin (Sn) - annealed	.0075 ohm	58 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	142 pF
SIR186LDP-T1-RE3	Vishay Intertechnology
IRF620SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.8 ohm	5.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRFR9014	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0
SI7119DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	200 V	C BEND	SQUARE	ENHANCEMENT MODE	1	5 A	1.25 mJ	3.8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.1 ohm	1.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIA400EDJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	11.25 mJ	12 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.019 ohm	12 A	DUAL	S-PDSO-N6		DRAIN	Not Qualified					260
SIHB33N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	278 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	793 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.099 ohm	33 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED
SIR184DP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	20 mJ	73 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	5 W	150 Cel	SILICON	34 ns	-55 Cel	52 ns		.007 ohm	73 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	22 pF
SQJA90EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	57 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0076 ohm	60 A	SINGLE	R-PSSO-G4		DRAIN								AEC-Q101
SQM50P08-25L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	110 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.025 ohm	50 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
SUD19P06-60L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	24.2 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SUM65N20-30	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	375 W						ENHANCEMENT MODE	1			65 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Tin/Lead (Sn/Pb)		65 A								e0
SQD90P04-9M4L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0094 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
SQJ211ELP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	88 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	35 ns	-55 Cel	80 ns		.03 ohm	33.6 A	SINGLE	R-PSSO-G4		DRAIN							80 pF	AEC-Q101
SQJ960EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	12 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.04 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified				40	260
IRF740APBF-BE3	Vishay Intertechnology
SI5442DU-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	60 A		25 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	40 ns	-55 Cel	80 ns	PURE MATTE TIN	.01 ohm	25 A	DUAL	R-PDSO-N3	1	DRAIN							115 pF
SIA449DJ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.02 ohm	12 A	DUAL	S-PDSO-N3		DRAIN				e3
SQD40081EL_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	61 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	150 ns	-55 Cel	410 ns	MATTE TIN	.0085 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	750 pF	AEC-Q101
SQD50N06-09L_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	115 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.009 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRF640STRR	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.18 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
IRFR9014TRL	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.5 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
IRFU210PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	95 mJ	2.6 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	1.5 ohm	2.6 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-251	e3	30	260	15 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.