Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SQ2348ES-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	12 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	19 ns	-55 Cel	41 ns		.024 ohm	8 A	DUAL	R-PDSO-G3					TO-236AB				50 pF
IRF510PBF-BE3	Vishay Intertechnology
IRFP450APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	190 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	760 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.4 ohm	14 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-247AC	e3	30	260	10 pF
SI7137DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	125 mJ	60 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.00195 ohm	42 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7617DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	42 mJ	35 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.0123 ohm	13.9 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	40	260
SQ2389ES-T1_BE3	Vishay Intertechnology
SIR880DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0067 ohm	60 A	DUAL	R-PDSO-C5		DRAIN					40	260
IRFR310TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	25 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.7 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	3.6 ohm	1.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
SI7252ADP-T1-GE3	Vishay Intertechnology																								MATTE TIN					1					e3	30	260
SI4178DY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	5 mJ	12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	35 ns	Matte Tin (Sn)	.021 ohm	12 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	56 pF	IEC-61249-2-21
SQ2398ES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.6 A	1.2 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	30.9 ns	-55 Cel	32 ns		.3 ohm	1.6 A	DUAL	R-PDSO-G3					TO-236AB				12 pF
SIR826ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0059 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SIR870DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0064 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN	Not Qualified				30	260
SI7148DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	75 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	100 mJ	28 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	96 ns	-55 Cel	90 ns	PURE MATTE TIN	.011 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN		AVALANCHE RATED
SIA437DJ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0145 ohm	29.7 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260
SUD23N06-31-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	31.25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	21.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.031 ohm	9.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SI7625DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ	35 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.007 ohm	17.3 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
IRF630STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	250 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.4 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED			30	260
SUM70040E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	266 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.004 ohm	120 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260
IRF740STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	520 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.55 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRFD9120PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	140 mJ	1 A	4	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.6 ohm	1 A	DUAL	R-PDIP-T4			Not Qualified			e3
SQJ570EP-T1_GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A	8.4 mJ	15 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	25 ns	-55 Cel	65 ns		.045 ohm	15 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	25 pF	AEC-Q101
SUM90140E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	180 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.018 ohm	90 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED
SQSA80ENW-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	72 A	24.2 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		-55 Cel			.027 ohm	18 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SQJA20EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	82 A	16 mJ	22.5 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	35 ns	-55 Cel	65 ns		.05 ohm	22.5 A	SINGLE	R-PSSO-G4		DRAIN							55 pF	AEC-Q101
SIHG80N60E-GE3	Vishay Intertechnology																								MATTE TIN					1					e3	30	260
SQJA81EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	88 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	35 ns	-55 Cel	67 ns	TIN	.0173 ohm	46 A	SINGLE	R-PSSO-G4	1	DRAIN				e3		260	75 pF	AEC-Q101
IRLL014TRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	100 mJ	2.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.2 ohm	2.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified		TO-261AA		40	260	42 pF
SI7172DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	11.25 mJ	25 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.07 ohm	5.9 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIB452DK-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	13 W	PLASTIC/EPOXY	SWITCHING	190 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	1.5 A		1.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	2.4 ohm		DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3
SIR624DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	11.25 mJ	18.6 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	54 ns	-55 Cel	48 ns		.064 ohm	18.6 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	8.3 pF
SQ2318AES-T1_BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	8 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	24 ns	-55 Cel	26.5 ns		.031 ohm	8 A	DUAL	R-PDSO-G3					TO-236AB				46 pF
SUD50P10-43L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	61 mJ	37.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.043 ohm	9.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SI7430DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	64 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	26 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.047 ohm	7.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SQJ488EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	1.68 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.021 ohm	42 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SQJQ480E-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	140 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.003 ohm	150 A	SINGLE	R-PSSO-G4		DRAIN				e3		260		AEC-Q101
IRF9640STRRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	125 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	700 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.5 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	10	260
IRF630	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	250 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	9 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e0
IRF840	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	510 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.85 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
IRFR9024TRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	300 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.28 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
SI7461DP	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	125 mJ	8.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	60 ns	-55 Cel	445 ns		.0145 ohm	8.6 A	DUAL	R-PDSO-F5		DRAIN
SQM10250E_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	84 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	45 ns	-55 Cel	80 ns		.03 ohm	65 A	SINGLE	R-PSSO-G2					TO-263AB				85 pF	AEC-Q101
IRF9630PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	74 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	500 mJ	6.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.8 ohm	6.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
IRFP9240PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	790 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.5 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AC	e3	30	260	81 pF
SQJB60EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	84 A	26.5 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		-55 Cel			.012 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
SI7615ADN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	C BEND	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				Matte Tin (Sn)	.0044 ohm	35 A	DUAL	S-PDSO-C5	1	DRAIN				e3	40	260
SQM110P06-8M9L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	230 A	211 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0089 ohm	110 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED
SI7450DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.2 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	40 A		3.2 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.09 ohm	3.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.