Vishay Intertechnology Power Field Effect Transistors (FET) 1,255

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF540SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	230 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.077 ohm	28 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3
SI7288DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	15.6 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	50 A	5 mJ	20 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.019 ohm	10 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
IRF530PBF-BE3	Vishay Intertechnology
IRFL9014PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	140 mJ	1.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.5 ohm		SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-261AA	e3	30	260
SIRA01DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.2 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	42 ns	-55 Cel	98 ns		.0049 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	70 pF
SQ2362ES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	7 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	40 ns	-55 Cel	51 ns	Matte Tin (Sn)	.068 ohm	4.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	26 pF	AEC-Q101
IRF640SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.18 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
SI4946BEY-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	7.2 mJ	6.5 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	35 ns	-55 Cel	55 ns	MATTE TIN	.041 ohm	6.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	44 pF
SI7157DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	300 A	61.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0016 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SI7469ADP-T1-RE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	125 A	80 mJ	46 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	46 ns	-55 Cel	82 ns	MATTE TIN	.027 ohm	46 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF
SQJ469EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	128 A	101 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.025 ohm	32 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3		260
IRF540STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	230 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				PURE MATTE TIN	.077 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB		30	260
SQ3427AEEV-T1_GE3	Vishay Intertechnology
SISS71DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A	31 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-50 Cel		MATTE TIN	.082 ohm	23 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
SI7431DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	2.2 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.174 ohm	2.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	40	260
IRF9530PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	88 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.3 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
SQM120P10-10M1L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	304 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0101 ohm	120 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
IRFP460LCPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	960 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Pure Matte Tin (Sn) - annealed	.27 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AC		30	260
SI2319CDS-T1-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	34 ns	-55 Cel	46 ns		.077 ohm	4.4 A	DUAL	R-PDSO-G3					TO-236AB				61 pF	IEC-61249-2-21
SQ2389ES-T1_GE3	Vishay Intertechnology																																			NOT SPECIFIED	NOT SPECIFIED
SI7155DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	125 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	116 ns	-55 Cel	420 ns		.0046 ohm	100 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	1370 pF
SQ2318AES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	8 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	24 ns	-55 Cel	26.5 ns		.031 ohm	8 A	DUAL	R-PDSO-G3					TO-236AB		NOT SPECIFIED	NOT SPECIFIED	46 pF
SIS413DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	70 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0094 ohm	18 A	DUAL	S-PDSO-C5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
IRFR9024PBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.28 ohm	8.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	10	260
IRF640STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				PURE MATTE TIN	.18 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED			30	260
SI7415DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	UNSPECIFIED	SWITCHING	60 V	C BEND	SQUARE	ENHANCEMENT MODE	1	30 A		3.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.065 ohm	3.6 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
SIRB40DP-T1-GE3	Vishay Intertechnology																																			NOT SPECIFIED	NOT SPECIFIED
IRF9530	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	88 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.3 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
SI7439DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	80 mJ	3 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.09 ohm	3 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA LOW-ON RESISTANCE		e3	30	260
IRF640STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.18 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED			40	260
IRF640	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.18 ohm	18 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0
SI7850DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	11 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	40 ns	-55 Cel	74 ns	MATTE TIN	.022 ohm	6.2 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260
IRF840PBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	510 mJ	8 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.85 ohm	8 A	SINGLE	R-PSFM-T3				AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	120 pF
SIA456DJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19 W	PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	2 A		2.6 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	75 ns	Matte Tin (Sn)	1.38 ohm	2.6 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3			6 pF
IRFD110PBF	Vishay Intertechnology														1 A			FET General Purpose Powers							PURE MATTE TIN					1		Not Qualified				30	260
SQ2337ES-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	6 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	23 ns	-55 Cel	39 ns		.29 ohm	2.2 A	DUAL	R-PDSO-G3			Not Qualified		TO-236AB				38 pF	AEC-Q101
IRF840SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	510 mJ	8 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.85 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRF9540PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	640 mJ	19 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.2 ohm	19 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260	140 pF
IRFP460BPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62 A	281 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN OVER NICKEL	.25 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN			TO-247AC	e3
SI4946BEY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	7.2 mJ	6.5 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	35 ns	-55 Cel	55 ns	MATTE TIN	.041 ohm	6.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3			44 pF
IRFP450PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	760 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.4 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AC	e3	30	260
SUM70101EL-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	281 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		PURE MATTE TIN	.0101 ohm	120 A	SINGLE	R-PSSO-G2	1				TO-263AB
SIR870ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	300 A	80 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.007 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SIS862DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	100 A	11.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				PURE MATTE TIN	.0085 ohm	40 A	DUAL	S-PDSO-F5	1	DRAIN					30	260
SI4559ADY-T1-GE3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	6.1 mJ	5.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.058 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
SIR681DP-T1-RE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	125 A	125 mJ	71.9 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	54 ns	-55 Cel	112 ns		.0167 ohm	71.9 A	DUAL	R-PDSO-F5		DRAIN							47 pF
SQJ461EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	85 A	125 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.015 ohm	21.7 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified				40	260		AEC-Q101
SI7439DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	50 A	80 mJ	3 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.09 ohm	3 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA LOW-ON RESISTANCE		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.