SINGLE RF Power Bipolar Junction Transistors (BJT) 692

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration (1)
    • SINGLE
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

RX1214B170W

NXP Semiconductors

NPN

SINGLE

YES

350 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

PLB16012U

NXP Semiconductors

NPN

SINGLE

YES

15 W

.9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

15 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

LWE2025R

NXP Semiconductors

NPN

SINGLE

YES

8 W

.8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

ROUND

1

S BAND

2

DISK BUTTON

Other Transistors

8 W

200 Cel

SILICON

16 V

RADIAL

O-CRDB-F2

EMITTER

Not Qualified

BLV193

NXP Semiconductors

NPN

SINGLE

YES

44 W

3.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

44 W

25

200 Cel

SILICON

16 V

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

PXB16050U

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

67 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

BLW89

NXP Semiconductors

NPN

SINGLE

NO

850 MHz

.32 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

9.6 W

10

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

HIGH RELIABILITY

BLV32F

NXP Semiconductors

NPN

SINGLE

NO

2000 MHz

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

16 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

82 W

20

200 Cel

SILICON

32 V

RADIAL

O-CRFM-F6

ISOLATED

Not Qualified

LXE15450X

NXP Semiconductors

NPN

SINGLE

YES

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

70 W

15

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLW87

NXP Semiconductors

NPN

SINGLE

NO

800 MHz

76 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLV12

NXP Semiconductors

NPN

SINGLE

NO

1600 MHz

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

25

200 Cel

100 pF

SILICON

16 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

RN3034B80W

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

BASE

Not Qualified

934045800114

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLY89A

NXP Semiconductors

NPN

SINGLE

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

200 Cel

SILICON

18 V

RADIAL

O-PRPM-F4

ISOLATED

Not Qualified

PTB42003X

NXP Semiconductors

NPN

SINGLE

YES

14 W

.75 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 dB

FLAT

RECTANGULAR

1

C BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

RX1214B130Y

NXP Semiconductors

NPN

SINGLE

YES

1200 MHz

280 W

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

BLW85

NXP Semiconductors

NPN

SINGLE

NO

650 MHz

105 W

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

16 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLW90

NXP Semiconductors

NPN

SINGLE

NO

900 MHz

.62 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

18.6 W

10

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

ISOLATED

Not Qualified

HIGH RELIABILITY

BLV103

NXP Semiconductors

NPN

SINGLE

YES

17 W

1.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

17 W

20

200 Cel

8 pF

SILICON

30 V

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RX1214B300Y

NXP Semiconductors

NPN

SINGLE

YES

630 W

21 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

MX0912B250Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

PVB42004X

NXP Semiconductors

NPN

SINGLE

YES

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

C BAND

2

FLANGE MOUNT

18 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MX0912B251Y

NXP Semiconductors

NPN

SINGLE

YES

690 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BFG741TRL

NXP Semiconductors

NPN

SINGLE

YES

7000 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

15 V

DUAL

R-PDSO-G4

Not Qualified

RZB06050W

NXP Semiconductors

NPN

SINGLE

YES

540 MHz

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

PZ1418B30U

NXP Semiconductors

NPN

SINGLE

YES

45 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.3 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

45 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

NOT APPLICABLE

BASE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RZ2731B48W

NXP Semiconductors

NPN

SINGLE

YES

4.2 A

CERAMIC, METAL-SEALED COFIRED

6 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

Not Qualified

BLX94A

NXP Semiconductors

NPN

SINGLE

NO

750 MHz

2.5 A

PLASTIC/EPOXY

AMPLIFIER

6 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

15

200 Cel

SILICON

30 V

RADIAL

O-PRPM-F4

ISOLATED

Not Qualified

934009540114

NXP Semiconductors

NPN

SINGLE

YES

25 A

METAL

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

20 V

DUAL

R-MDFM-F2

BASE

Not Qualified

WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

BLW86

NXP Semiconductors

NPN

SINGLE

NO

570 MHz

.105 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

36 V

RADIAL

O-CRFM-F4

1

ISOLATED

Not Qualified

BLX14

NXP Semiconductors

NPN

SINGLE

NO

250 MHz

4 A

PLASTIC/EPOXY

AMPLIFIER

1 V

7.5 dB

FLAT

UNSPECIFIED

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

15

200 Cel

125 pF

SILICON

36 V

UNSPECIFIED

X-PXPM-F4

Not Qualified

BLV98

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.5 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F6

Not Qualified

BLT94

NXP Semiconductors

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

SILICON

10 V

DUAL

R-CDSO-G8

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

RZ1214B65YTRAY

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

WITH EMITTER BALLASTING RESISTORS

MX1011B200Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

PLB16030U

NXP Semiconductors

NPN

SINGLE

YES

2.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

40 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MX0912B350Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MRF858S

NXP Semiconductors

NPN

SINGLE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLATPACK

Other Transistors

20 W

30

200 Cel

8 pF

SILICON

30 V

DUAL

R-CDFP-F6

Not Qualified

WITH EMITTER BALLASTING RESISTORS

934016870114

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

MRB11040W

NXP Semiconductors

NPN

SINGLE

YES

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

MZ0912B50YTRAY

NXP Semiconductors

NPN

SINGLE

YES

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

20 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

LXE15450XTRAY

NXP Semiconductors

NPN

SINGLE

YES

9 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

70 W

15

200 Cel

SILICON

25 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LV2327E40R

NXP Semiconductors

NPN

SINGLE

YES

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

18 W

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

MRB11175Y

NXP Semiconductors

NPN

SINGLE

YES

500 W

12 A

CERAMIC, METAL-SEALED COFIRED

7.5 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

DUAL

R-CDFM-F2

Not Qualified

BLV935

NXP Semiconductors

NPN

SINGLE

YES

70 W

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

70 W

30

200 Cel

SILICON

30 V

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

LXE18300XTRAY

NXP Semiconductors

NPN

SINGLE

YES

.3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

Not Qualified

BFQ291

NXP Semiconductors

NPN

SINGLE

YES

400 MHz

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

4

DISK BUTTON

Other Transistors

15

200 Cel

SILICON

RADIAL

O-CRDB-F4

BASE

Not Qualified

HIGH RELIABILITY

PTB32001X

NXP Semiconductors

NPN

SINGLE

NO

4.2 W

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

Other Transistors

200 Cel

SILICON

15 V

RADIAL

O-CRFM-F2

BASE

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BLS2731-110

NXP Semiconductors

NPN

SINGLE

YES

280 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

40

200 Cel

SILICON

DUAL

R-CDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

NOT SPECIFIED

NOT SPECIFIED

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.