SINGLE RF Power Bipolar Junction Transistors (BJT) 692

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  2. RF Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Analog Devices
    • Asi Semiconductor
    • Broadcom
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Maxim Integrated
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Texas Instruments
    • Toshiba
Polarity or Channel Type
    • NPN
    • NPN AND PNP
    • PNP
Configuration (1)
    • SINGLE
    • COMMON BASE, 2 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMPLEX
    • SEPARATE, 5 ELEMENTS
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • 100 MHz
    • 1000 MHz
    • 1025 MHz
    • 108 MHz
    • 1100 MHz
    • 1150 MHz
    • 1200 MHz
    • 1250 MHz
    • 1400 MHz
    • 160 MHz
    • 1600 MHz
    • 1650 MHz
    • 175 MHz
    • 200 MHz
    • 2000 MHz
    • 245 MHz
    • 250 MHz
    • 2500 MHz
    • 2700 MHz
    • 275 MHz
    • 2900 MHz
    • 300 MHz
    • 315 MHz
    • 320 MHz
    • 3200 MHz
    • 3300 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 3900 MHz
    • 400 MHz
    • 4000 MHz
    • 470 MHz
    • 50 MHz
    • 500 MHz
    • 525 MHz
    • 530 MHz
    • 540 MHz
    • 550 MHz
    • 5500 MHz
    • 570 MHz
    • 600 MHz
    • 6000 MHz
    • 625 MHz
    • 650 MHz
    • 6500 MHz
    • 700 MHz
    • 7000 MHz
    • 750 MHz
    • 800 MHz
    • 8000 MHz
    • 825 MHz
    • 850 MHz
    • 860 MHz
    • 900 MHz
    • 950 MHz
Maximum Power Dissipation (Abs)
    • .105 W
    • .225 W
    • .28 W
    • 1 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.9 W
    • 10 W
    • 10.8 W
    • 100 W
    • 1000 W
    • 105 W
    • 107 W
    • 1070 W
    • 11 W
    • 11.5 W
    • 110 W
    • 1100 W
    • 1200 W
    • 125 W
    • 1250 W
    • 127 W
    • 1300 W
    • 132 W
    • 133 W
    • 134 W
    • 135 W
    • 1350 W
    • 1360 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 1460 W
    • 15 W
    • 150 W
    • 1500 W
    • 16.7 W
    • 160 W
    • 167 W
    • 1670 W
    • 17 W
    • 17.6 W
    • 175 W
    • 18 W
    • 18.8 W
    • 180 W
    • 185 W
    • 19.3 W
    • 19.4 W
    • 190 W
    • 2 W
    • 2.2 W
    • 2.3 W
    • 20 W
    • 20.6 W
    • 200 W
    • 21.4 W
    • 21.5 W
    • 21.8 W
    • 219 W
    • 220 W
    • 23 W
    • 230 W
    • 233 W
    • 245 W
    • 25 W
    • 250 W
    • 257 W
    • 27 W
    • 270 W
    • 28 W
    • 280 W
    • 29 W
    • 290 W
    • 3 W
    • 3.5 W
    • 30 W
    • 300 W
    • 31 W
    • 31.8 W
    • 310 W
    • 312 W
    • 318 W
    • 32 W
    • 320 W
    • 330 W
    • 34 W
    • 340 W
    • 35 W
    • 35.5 W
    • 350 W
    • 36 W
    • 37.2 W
    • 37.5 W
    • 375 W
    • 4 W
    • 4.2 W
    • 4.5 W
    • 40 W
    • 43 W
    • 438 W
    • 44 W
    • 45 W
    • 46 W
    • 5 W
    • 50 W
    • 500 W
    • 53 W
    • 57 W
    • 575 W
    • 58 W
    • 583 W
    • 6 W
    • 60 W
    • 600 W
    • 63 W
    • 630 W
    • 65 W
    • 67 W
    • 690 W
    • 7 W
    • 7.5 W
    • 7.6 W
    • 70 W
    • 71 W
    • 720 W
    • 73 W
    • 730 W
    • 75 W
    • 750 W
    • 76 W
    • 77 W
    • 786 W
    • 79.5 W
    • 8 W
    • 8.33 W
    • 8.7 W
    • 8.75 W
    • 80 W
    • 87 W
    • 87.5 W
    • 875 W
    • 88 W
    • 88.8 W
    • 880 W
    • 9 W
    • 9.2 W
    • 90 W
    • 910 W
    • 94 W
    • 940 W
    • 960 W
Maximum Collector Current (IC)
    • .001 A
    • .0011 A
    • .0113 A
    • .03 A
    • .05 A
    • .06 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .15 A
    • .2 A
    • .22 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .375 A
    • .4 A
    • .44 A
    • .45 A
    • .5 A
    • .54 A
    • .6 A
    • .62 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • .82 A
    • .85 A
    • .9 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.35 A
    • 1.4 A
    • 1.5 A
    • 1.59 A
    • 1.6 A
    • 1.65 A
    • 1.7 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 11 A
    • 12 A
    • 12.5 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17.5 A
    • 17.8 A
    • 18.75 A
    • 19.8 A
    • 2 A
    • 2.1 A
    • 2.25 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.67 A
    • 2.7 A
    • 2.75 A
    • 2.8 A
    • 20 A
    • 21 A
    • 21.6 A
    • 22 A
    • 24 A
    • 25 A
    • 27 A
    • 28 A
    • 3 A
    • 3.25 A
    • 3.5 A
    • 3.7 A
    • 32 A
    • 35 A
    • 36 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.8 A
    • 40 A
    • 43.2 A
    • 45 A
    • 5 A
    • 5.4 A
    • 5.5 A
    • 5.52 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.5 A
    • 6.7 A
    • 7 A
    • 7.4 A
    • 7.7 A
    • 7.8 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum VCEsat
    • .5 V
    • 1 V
    • 1.5 V
    • 3 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.6 dB
    • 10.8 dB
    • 11 dB
    • 11.5 dB
    • 11.8 dB
    • 12 dB
    • 12.2 dB
    • 13 dB
    • 13.5 dB
    • 15 dB
    • 16 dB
    • 17 dB
    • 18 dB
    • 4 dB
    • 4.15 dB
    • 4.3 dB
    • 4.4 dB
    • 4.5 dB
    • 4.8 dB
    • 4.88 dB
    • 4.9 dB
    • 5 dB
    • 5.1 dB
    • 5.2 dB
    • 5.4 dB
    • 5.5 dB
    • 5.6 dB
    • 5.7 dB
    • 6 dB
    • 6.2 dB
    • 6.3 dB
    • 6.4 dB
    • 6.5 dB
    • 6.6 dB
    • 6.7 dB
    • 6.8 dB
    • 6.9 dB
    • 7 dB
    • 7.2 dB
    • 7.3 dB
    • 7.4 dB
    • 7.5 dB
    • 7.7 dB
    • 7.8 dB
    • 8 dB
    • 8.1 dB
    • 8.4 dB
    • 8.5 dB
    • 8.6 dB
    • 8.7 dB
    • 8.75 dB
    • 8.8 dB
    • 9 dB
    • 9.2 dB
    • 9.3 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
No. of Elements
    • 1
    • 2
    • 5
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
No. of Terminals
    • 10
    • 14
    • 16
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP RF Small Signal
    • Other Transistors
Maximum Power Dissipation Ambient
    • .2 W
    • 1.25 W
    • 1.4 W
    • 1.5 W
    • 10 W
    • 10.8 W
    • 100 W
    • 105 W
    • 11 W
    • 11.6 W
    • 116 W
    • 12 W
    • 12.5 W
    • 120 W
    • 125 W
    • 132 W
    • 133 W
    • 134 W
    • 14 W
    • 145 W
    • 15 W
    • 150 W
    • 154 W
    • 17 W
    • 175 W
    • 18 W
    • 18.6 W
    • 19.3 W
    • 2 W
    • 20 W
    • 200 W
    • 21.5 W
    • 215 W
    • 218 W
    • 220 W
    • 23 W
    • 230 W
    • 25 W
    • 250 W
    • 27 W
    • 270 W
    • 29 W
    • 290 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 32.5 W
    • 320 W
    • 340 W
    • 35 W
    • 350 W
    • 38 W
    • 40 W
    • 41 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 57 W
    • 6 W
    • 60 W
    • 64.8 W
    • 67 W
    • 68 W
    • 7.5 W
    • 70 W
    • 77 W
    • 8 W
    • 8.5 W
    • 80 W
    • 82 W
    • 87 W
    • 9 W
    • 9.6 W
    • 90 W
    • 94 W
Minimum DC Current Gain (hFE)
    • 10
    • 100
    • 120
    • 15
    • 18
    • 19
    • 20
    • 25
    • 30
    • 40
    • 45
    • 5
    • 50
    • 60
    • 75
    • 8
    • 80
    • 85
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 250 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 120 pF
    • 125 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 16 pF
    • 160 pF
    • 18 pF
    • 19 pF
    • 2.6 pF
    • 20 pF
    • 200 pF
    • 220 pF
    • 24 pF
    • 240 pF
    • 25 pF
    • 250 pF
    • 28 pF
    • 3 pF
    • 3.5 pF
    • 3.6 pF
    • 3.7 pF
    • 30 pF
    • 300 pF
    • 320 pF
    • 330 pF
    • 36 pF
    • 360 pF
    • 4.2 pF
    • 40 pF
    • 45 pF
    • 450 pF
    • 48 pF
    • 5 pF
    • 5.2 pF
    • 50 pF
    • 500 pF
    • 55 pF
    • 6 pF
    • 6.5 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 7.5 pF
    • 8 pF
    • 8.5 pF
    • 80 pF
    • 85 pF
    • 90 pF
    • 95 pF
Transistor Element Material
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 110 V
    • 12 V
    • 15 V
    • 16 V
    • 16.5 V
    • 17 V
    • 18 V
    • 19 V
    • 20 V
    • 22 V
    • 24 V
    • 25 V
    • 250 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 35 V
    • 36 V
    • 40 V
    • 400 V
    • 45 V
    • 53 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7.2 V
    • 70 V
    • 75 V
    • 8 V
Minimum Operating Temperature
    • -55 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • Tin (Sn)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CRFM-F2
    • O-CRFM-F4
    • O-CRFM-F6
    • O-CRMW-F4
    • O-CRPM-F2
    • O-CRPM-F4
    • O-CUPM-P3
    • O-CXFM-F4
    • O-CXFM-F6
    • O-MBCY-W3
    • O-MBCY-W4
    • O-MBFM-P3
    • O-MRDB-F4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-PDFM-F2
    • O-PRDB-F4
    • O-PRFM-F2
    • O-PRFM-F4
    • O-PRPM-F4
    • O-PXFM-F6
    • O-XRDB-F4
    • O-XRPM-F4
    • R-CDCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFP-F16
    • R-CDFP-F2
    • R-CDFP-F6
    • R-CDMW-F2
    • R-CDSO-G8
    • R-CQCC-N3
    • R-MDFM-F2
    • R-MDFM-F4
    • R-MDFM-F6
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDIP-T14
    • R-PDSO-G10
    • R-PDSO-G14
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-XRPM-F4
    • R-XUUC-N16
    • R-XUUC-N5
    • S-CDFM-F2
    • S-CQMW-F4
    • S-PDFM-F2
    • S-PDPM-F4
    • X-PXPM-F4
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • BASE
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • BUILT IN EMITTER BALLASTING RESISTOR
    • DIFFUSED EMITTER BALLAST RESISTOR
    • DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, HIGH VOLTAGE
    • HIGH RELIABILITY, WITH EMITTER BALLAST RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR
    • HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
    • HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS
    • HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
    • LOW NOISE
    • WITH EMITTER BALLASTING RESISTORS
JEDEC-95 Code
    • TO-117
    • TO-126
    • TO-220AB
    • TO-251
    • TO-33
    • TO-39
    • TO-60
JESD-609 Code
    • e0
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 235
    • 260
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • MIL-38535; RH - 100K Rad(Si)
    • MIL-38535; RH - 300K Rad(Si)
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

LV1721E50R

NXP Semiconductors

NPN

SINGLE

YES

18 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

Other Transistors

18 W

15

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

LFE18500X

NXP Semiconductors

NPN

SINGLE

YES

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

120 W

15

200 Cel

SILICON

22 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LZ1418E100RTRAY

NXP Semiconductors

NPN

SINGLE

YES

4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

20 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

MF1011B900Y

NXP Semiconductors

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

BASE

Not Qualified

DIFFUSED EMITTER BALLASTING RESISTORS

LLE18300X

NXP Semiconductors

NPN

SINGLE

YES

50 W

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

50 W

15

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE16045XTRAY

NXP Semiconductors

NPN

SINGLE

YES

.05 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

Not Qualified

LTE42008RTRAY

NXP Semiconductors

NPN

SINGLE

NO

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.5 dB

FLAT

ROUND

1

C BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

LLE15370XTRAY

NXP Semiconductors

NPN

SINGLE

YES

6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

50 W

15

200 Cel

SILICON

15 V

DUAL

S-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE18100X

NXP Semiconductors

NPN

SINGLE

YES

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

23 W

15

200 Cel

SILICON

15 V

DUAL

R-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE15180XTRAY

NXP Semiconductors

NPN

SINGLE

YES

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.8 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

25 W

15

200 Cel

SILICON

22 V

DUAL

S-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

LLE16120XTRAY

NXP Semiconductors

NPN

SINGLE

YES

.1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

DUAL

R-CDFM-F2

Not Qualified

LTE21015RTRAY

NXP Semiconductors

NPN

SINGLE

NO

.25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8.1 dB

FLAT

ROUND

1

S BAND

2

FLANGE MOUNT

SILICON

RADIAL

O-CRFM-F2

Not Qualified

LLE18150X

NXP Semiconductors

NPN

SINGLE

YES

3 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.8 dB

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

25 W

15

200 Cel

SILICON

22 V

DUAL

S-CDFM-F2

EMITTER

Not Qualified

WITH EMITTER BALLASTING RESISTORS

BLW76

NXP Semiconductors

NPN

SINGLE

NO

315 MHz

140 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLT50

NXP Semiconductors

NPN

SINGLE

YES

2 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

10 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

Other Transistors

2 W

25

175 Cel

6 pF

SILICON

10 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e3

BLT52-T

NXP Semiconductors

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

23 W

25

200 Cel

SILICON

10 V

DUAL

R-CDSO-G8

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLW79

NXP Semiconductors

NPN

SINGLE

NO

1000 MHz

.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

8.5 W

10

200 Cel

SILICON

17 V

RADIAL

O-CRPM-F4

Not Qualified

BLT53

NXP Semiconductors

NPN

SINGLE

YES

3900 MHz

35.5 W

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

Other Transistors

25

200 Cel

SILICON

10 V

RADIAL

O-CRDB-F4

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLT52

NXP Semiconductors

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

23 W

25

200 Cel

SILICON

10 V

DUAL

R-CDSO-G8

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BLT50T/R

NXP Semiconductors

NPN

SINGLE

YES

.5 A

PLASTIC/EPOXY

AMPLIFIER

10 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

2 W

25

175 Cel

6 pF

SILICON

10 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

HIGH RELIABILITY

BLW78

NXP Semiconductors

NPN

SINGLE

NO

350 MHz

160 W

10 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

20

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BLT50-T

NXP Semiconductors

NPN

SINGLE

YES

.5 A

PLASTIC/EPOXY

AMPLIFIER

10 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

2 W

25

175 Cel

6 pF

SILICON

10 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

HIGH RELIABILITY

BLT52T/R

NXP Semiconductors

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

8

SMALL OUTLINE

23 W

25

200 Cel

SILICON

10 V

DUAL

R-CDSO-G8

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

BFT98

Infineon Technologies

NPN

SINGLE

NO

3300 MHz

2.2 W

.2 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

POST/STUD MOUNT

Other Transistors

175 Cel

SILICON

20 V

RADIAL

O-CRPM-F4

Not Qualified

PTB20216

Infineon Technologies

NPN

SINGLE

YES

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

NO LEAD

RECTANGULAR

1

L BAND

3

CHIP CARRIER

SILICON

20 V

MATTE TIN

QUAD

R-CQCC-N3

Not Qualified

HIGH RELIABILITY

e3

PTB20228

Infineon Technologies

NPN

SINGLE

YES

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

NO LEAD

RECTANGULAR

1

L BAND

3

CHIP CARRIER

SILICON

20 V

MATTE TIN

QUAD

R-CQCC-N3

Not Qualified

HIGH RELIABILITY

e3

PTB20181

Infineon Technologies

NPN

SINGLE

YES

1.1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

NO LEAD

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

CHIP CARRIER

SILICON

28 V

MATTE TIN

DUAL

R-CDCC-N4

Not Qualified

HIGH RELIABILITY

e3

BFT99

Infineon Technologies

NPN

SINGLE

NO

3300 MHz

4 W

.35 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

POST/STUD MOUNT

Other Transistors

175 Cel

SILICON

20 V

RADIAL

O-CRPM-F4

Not Qualified

PTB20170

Infineon Technologies

NPN

SINGLE

YES

6.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20151

Infineon Technologies

NPN

SINGLE

YES

7.7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

BFT98B

Infineon Technologies

NPN

SINGLE

YES

3300 MHz

2.3 W

.2 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

DISK BUTTON

Other Transistors

150 Cel

SILICON

20 V

RADIAL

O-CRDB-F4

Not Qualified

PTB20111

Infineon Technologies

NPN

SINGLE

YES

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

SILICON

25 V

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

PTB20264

Infineon Technologies

NPN

SINGLE

2 A

AMPLIFIER

1

L BAND

SILICON

22 V

MATTE TIN

Not Qualified

HIGH RELIABILITY

e3

PTB20082

Infineon Technologies

NPN

SINGLE

YES

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

SILICON

MATTE TIN

DUAL

R-CDFM-F2

EMITTER

Not Qualified

HIGH RELIABILITY

e3

SP000748378

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

150 Cel

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101

BDP948E6433HTMA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

AEC-Q101

BDP950-E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

60 V

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

260

BDP954-E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

BDP950-E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

60 V

TIN LEAD

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

e0

BDP948E6327HTSA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

AEC-Q101

BDP948-E6327

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

BDP950

Infineon Technologies

PNP

SINGLE

YES

100 MHz

1.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

60 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BDP948-E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

45 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

260

BDP948H6327TR

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

BDP954-E6433

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BDP948H6433XTMA1

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

DUAL

R-PDSO-G4

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

BDP948

Infineon Technologies

PNP

SINGLE

YES

100 MHz

1.5 W

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

85

150 Cel

SILICON

45 V

Tin (Sn)

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BDP954H6327TR

Infineon Technologies

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

100 V

DUAL

R-PDSO-G4

COLLECTOR

RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.