SINGLE RF Power Field Effect Transistors (FET) 2,328

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Manufacturers
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration (1)
    • SINGLE
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NE5520279A-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

1 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5511279A-T1A

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

UNSPECIFIED

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE5500479A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.6 W

UNSPECIFIED

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

1 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

NE552R479A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

UNSPECIFIED

AMPLIFIER

15 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

.3 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

NE5550979A-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NE5531079A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

35 W

UNSPECIFIED

AMPLIFIER

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE5520279A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

1 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5520379A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

15 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

1.5 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

1.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

NE5500479A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

e0

NE5511279A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

8 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5500479A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.7 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5550779A-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

17.8 W

1

2.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NE552R479A-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

.3 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN BISMUTH

.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE552R679A-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5520279A-T1A

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

UNSPECIFIED

AMPLIFIER

15 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

.6 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN BISMUTH

.6 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

260

NE5510279A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.6 W

UNSPECIFIED

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

1 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

1 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

NE552R479A-T1A

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

UNSPECIFIED

AMPLIFIER

15 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

.3 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN BISMUTH

.3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

260

NE552R679A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5531079A-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

35 W

UNSPECIFIED

AMPLIFIER

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE5520379A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

3.8 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

1.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE5510179A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.6 W

PLASTIC/EPOXY

AMPLIFIER

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

.5 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.5 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

e0

NE552R679A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

UNSPECIFIED

AMPLIFIER

15 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.35 A

4

MICROWAVE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

NE5500179A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

8 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.25 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

DE275-201N25

Littelfuse

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

25 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DE275-101N30

Littelfuse

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

30 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MWT-PH9

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

8 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

UNCASED CHIP

FET RF Small Signal

HIGH ELECTRON MOBILITY

3.3 W

180 Cel

GALLIUM ARSENIDE

UNSPECIFIED

R-XXUC-N

HIGH RELIABILITY

MWT-H9

Littelfuse

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

4

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-2

Littelfuse

SINGLE

YES

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

7

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N7

Not Qualified

NOT APPLICABLE

NOT APPLICABLE

MWT-H973

Littelfuse

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

FLAT

UNSPECIFIED

DEPLETION MODE

1

K BAND

4

MICROWAVE

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UNSPECIFIED

X-CXMW-F4

Not Qualified

MWT-973

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

UNSPECIFIED

DEPLETION MODE

1

K BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

UNSPECIFIED

X-CXMW-F4

2

Not Qualified

e4

MWT-H971

Littelfuse

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

FLAT

SQUARE

DEPLETION MODE

1

K BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

DUAL

S-CDFM-F2

Not Qualified

MWT-25

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

12 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

2 A

UPPER

R-XUUC-N

Not Qualified

MWT-771

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

K BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

e4

MWT-17Q3

Littelfuse

P-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 V

NO LEAD

SQUARE

DEPLETION MODE

1

S BAND

16

CHIP CARRIER

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN

.4 A

QUAD

S-CQCC-N16

3

Not Qualified

e3

MWT-A989SB

Littelfuse

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

8 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.2 A

DUAL

R-PDSO-F4

3

Not Qualified

e3

MWT-PH16A

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

9 V

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

MICROWAVE

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

QUAD

R-XQMW-F

Not Qualified

MWT-971

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

K BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

e4

MWT-271

Littelfuse

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

K BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

e4

MWT-970

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

K BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

QUAD

S-CQMW-F4

1

Not Qualified

e4

MWT-373

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

UNSPECIFIED

DEPLETION MODE

1

K BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

UNSPECIFIED

X-CXMW-F4

2

Not Qualified

e4

MWT-24

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

12 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

1.8 A

UPPER

R-XUUC-N

Not Qualified

MWT-A9

Littelfuse

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-270

Littelfuse

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

K BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

QUAD

S-CQMW-F4

1

Not Qualified

e4

MWT-371

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

K BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

e4

MWT-871

Littelfuse

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

e4

MWT-22

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

9 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.8 A

UPPER

R-XUUC-N

Not Qualified

MWT-PH15QACSB

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

8 V

NO LEAD

SQUARE

DEPLETION MODE

1

X BAND

12

CHIP CARRIER

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

TIN

.2 A

QUAD

S-CQCC-N12

3

Not Qualified

e3

MWT-7

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

3

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N3

Not Qualified

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.