YES RF Power Field Effect Transistors (FET) 2,400+

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Manufacturers
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount (1)
    • YES
    • NO
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PD55025STR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

7 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

CGH40025F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

175 Cel

GALLIUM NITRIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GS61008P-MR

Gan Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

GOLD OVER NICKEL

90 A

BOTTOM

R-PBCC-N4

3

SOURCE

e4

30

260

PD55025S

STMicroelectronics

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

TIN LEAD

7 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

A3G20S350-01SR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

125 V

17 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F2

40

260

BLF245B,112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

75 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

14 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

4.5 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

200 Cel

SILICON

1.5 ohm

4.5 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

PD55025

STMicroelectronics

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

TIN LEAD

7 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

D1020UK

Tt Electronics Plc

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

70 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

GOLD

25 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

LOW NOISE

e4

BLF177

NXP Semiconductors

N-CHANNEL

SINGLE

YES

220 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

125 V

FLAT

ROUND

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

16 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

220 W

200 Cel

SILICON

.3 ohm

16 A

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

D2002UK

Tt Electronics Plc

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

GOLD

2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

LOW NOISE

e4

CGH31240F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CGHV40100F

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

Gold (Au) - with Nickel (Ni) barrier

8.7 A

DUAL

R-CDFM-F2

SOURCE

e4

NOT SPECIFIED

NOT SPECIFIED

PTVA101K02EVV1R0XTMA1

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

MRFE6VS25GNR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

133 V

24.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

25 W

150 Cel

-40 Cel

TIN

DUAL

R-PDFM-F2

3

e3

40

260

MRF1513NT1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

31.2 W

PLASTIC/EPOXY

AMPLIFIER

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

2 A

QUAD

R-PQSO-N4

3

SOURCE

Not Qualified

e3

40

260

AFV121KHR5

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

112 V

18.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.5 pF

D2003UK

Tt Electronics Plc

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

GOLD

1 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

LOW NOISE

e4

FLL57MK

Fujitsu

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

21.4 W

175 Cel

GALLIUM ARSENIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

GS61008T-MR

Gan Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

GALLIUM NITRIDE

-55 Cel

GOLD OVER NICKEL

90 A

BOTTOM

R-PBCC-N4

3

SOURCE

e4

30

260

AFT09MS007NT1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

182 W

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

3

e3

40

260

DE375-501N21A

IXYS Corporation

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

500 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

25 A

DUAL

R-PDSO-F6

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GS61008T-TR

Gan Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

GALLIUM NITRIDE

-55 Cel

GOLD OVER NICKEL

90 A

BOTTOM

R-PBCC-N4

3

SOURCE

e4

30

260

MRF9030LR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

92 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

PD85025-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

7 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

e3

BLF3G21-30,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN

4.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

PD55008TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

52.8 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

4 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

GS61004B-MR

Gan Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

GOLD OVER NICKEL

45 A

BOTTOM

R-PBCC-N3

3

SOURCE

e4

30

260

BLF278,112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

125 V

20 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

18 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

500 W

200 Cel

SILICON

.3 ohm

18 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

BLF878,112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

300 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

89 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

30

260

FLC107WG

Fujitsu

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

7.5 W

175 Cel

GALLIUM ARSENIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

PTVA101K02EVV1R250XTMA1

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PD54003-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

52.8 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

4 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

MRFE6S9045NR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

66 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

TIN

DUAL

R-PDFP-F2

3

SOURCE

Not Qualified

TO-270

e3

40

260

CGH40010P

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLATPACK

FET RF Small Signal

HIGH ELECTRON MOBILITY

105 Cel

GALLIUM NITRIDE

DUAL

R-CDFP-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CG2H40010P

Wolfspeed

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

84 V

15 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLATPACK

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-40 Cel

1.5 A

DUAL

R-CDFP-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

.186 pF

D1007UK

Tt Electronics Plc

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

70 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

GOLD

DUAL

R-CDFM-F4

SOURCE

Not Qualified

LOW NOISE

e4

FLU35XM

Fujitsu

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

4

MICROWAVE

Other Transistors

JUNCTION

15 W

175 Cel

GALLIUM ARSENIDE

QUAD

R-CQMW-F4

SOURCE

Not Qualified

HIGH RELIABILITY

GS66508T-TR

Gan Systems

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

650 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

30 A

BOTTOM

R-XBCC-N4

3

SOURCE

e4

30

260

GS66516B-MR

Gan Systems

P-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

650 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

GOLD OVER NICKEL

60 A

BOTTOM

R-XBCC-N6

3

SOURCE

e4

30

260

934066857112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

SOURCE

ESD PROTECTED, HIGH RELIABILITY

ATF-50189-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

14 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

1 A

3

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

150 Cel

SILICON

TIN

1 A

SINGLE

R-PSSO-F3

2

Not Qualified

LOW NOISE

MO-229

e3

260

BLF246,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

13 A

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

LOW NOISE

MRF6V10010NR4

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN

QUAD

R-PQCC-N4

3

SOURCE

Not Qualified

e3

40

260

AFT05MP075NR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

690 W

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

TIN

3

e3

40

260

BLL6H0514-25,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 A

DUAL

R-CDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

MRF8HP21130HSR3

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

NOT APPLICABLE

SOURCE

Not Qualified

40

260

MGF2430A-01

Mitsubishi Electric

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

5 W

175 Cel

GALLIUM ARSENIDE

.8 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

PTVA101K02EV-V1-R0

Wolfspeed

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

17 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.