YES RF Power Field Effect Transistors (FET) 2,400+

  1. Home
  2. RF Power Field Effect Transistors (FET)
Manufacturers
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount (1)
    • YES
    • NO
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BLF642,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

IEC-60134

MRF6VP3091NBR5

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

115 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

DUAL

R-PDFM-F4

3

SOURCE

Not Qualified

TO-272

e3

40

260

BLF6G27LS-40P

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

15.5 A

DUAL

R-CDFP-F4

NOT APPLICABLE

SOURCE

NOT SPECIFIED

NOT SPECIFIED

BLF6G38-50,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

16.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

16.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

245

MRFE6VP8600HSR6

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

1052 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

130 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

Not Qualified

40

260

BLF6G22-45,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MRF6S21050LR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

151 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

AFV121KHSR5

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

112 V

18.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

-40 Cel

DUAL

R-CDFM-F4

SOURCE

40

260

2.5 pF

MRF6S18140HR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

MRF6S21190HSR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFP-F2

NOT APPLICABLE

SOURCE

Not Qualified

40

260

MRF6VP121KHR6

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

40

260

MRFE6VP8600HR6

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

1052 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

130 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

40

260

MRF6S9160HSR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

565 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-CDFP-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

A3G26H350W17SR3

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

6

FLATPACK

JUNCTION

150 Cel

GALLIUM NITRIDE

-55 Cel

QUAD

R-CQFP-F6

40

260

MRF6V12500HR5

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

MRF6VP41KHSR6

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

110 V

19 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

3.3 pF

MRF6S9125MR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

398 W

PLASTIC/EPOXY

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-PDFM-F4

3

SOURCE

Not Qualified

TO-270

40

260

MRF6V14300HR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

MRF6V13250HR5

NXP Semiconductors

N-CHANNEL

SINGLE

YES

476 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

MRF6S9045MR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

175 W

PLASTIC/EPOXY

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-PDFP-F2

3

SOURCE

Not Qualified

TO-270

40

260

BLF6G38-10,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

3.1 A

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

3.1 A

DUAL

R-CDFP-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF6G38LS-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

34 A

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

34 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

40

245

MRFE6VP61K25GSR5

NXP Semiconductors

N-CHANNEL

YES

1333 W

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

40

260

AFV10700GSR5

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDSO-G4

SOURCE

40

260

A3G20S250-01SR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

16.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

GALLIUM NITRIDE

-55 Cel

DUAL

R-CDFP-F2

40

260

MRF6S9060NR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

227 W

PLASTIC/EPOXY

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

DUAL

R-PDFP-F2

3

SOURCE

Not Qualified

TO-270

e3

40

260

MRF6VP3091NR1

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

115 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

TIN

DUAL

R-PDFP-F4

3

SOURCE

Not Qualified

TO-270

e3

40

260

MRF6P9220HR3

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

700 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF6G22LS-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

29 A

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

29 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

40

245

BLF245C

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

16 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

85 W

200 Cel

SILICON

1.5 ohm

4.5 A

DUAL

R-CDFM-F8

ISOLATED

Not Qualified

8 pF

MRF6V12250HSR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F2

SOURCE

MRF6P21190HR6

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

700 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF6G20-75

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

18 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

18 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MRF6V2010N

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

MATTE TIN

DUAL

R-PDFM-F2

3

SOURCE

Not Qualified

TO-270AA

e3

40

260

BLF368,112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

12 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

25 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

500 W

200 Cel

SILICON

.15 ohm

25 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

MRF6S21190HR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

260

BLF6G27-10G,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

3.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

3.5 A

DUAL

R-CDSO-G2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF348

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

500 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

11 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

25 A

4

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

500 W

200 Cel

SILICON

.15 ohm

25 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

PTFB211503FLV2R250

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

16.5 dB

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

QUAD

R-CQFP-X4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

GTVA311801FAV1R0

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

13.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLATPACK

HIGH ELECTRON MOBILITY

225 Cel

GALLIUM NITRIDE

7.5 A

DUAL

R-CDFP-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PTAC210802FCV1XWSA1

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PXAC201602FCV1XWSA1

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

16 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PXFC192207FHV3R250

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

19 dB

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

QUAD

R-CQFP-X4

SOURCE

PXAC241702FCV1R250XTMA1

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

15.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PTF211802A

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

498 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e3

PTVA120251EAV1XWSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

105 V

16.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

PTF211301A

Infineon Technologies

N-CHANNEL

SINGLE

YES

350 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e3

PXAC213308FVV1R0

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

15.5 dB

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

6

FLATPACK

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

QUAD

R-CQFP-X6

SOURCE

NOT SPECIFIED

NOT SPECIFIED

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.