Renesas Electronics RF Power Field Effect Transistors (FET) 166

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Manufacturers (1)
    • Renesas Electronics
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NE8500200-WB-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

2.5 A

UPPER

R-XUUC-N

Not Qualified

HIGH RELIABILITY

e6

NE1280200

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

8.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

7

UNCASED CHIP

HETERO-JUNCTION

175 Cel

SILICON

UPPER

R-XUUC-N7

Not Qualified

HIGH RELIABILITY

NE6500278-E3

Renesas Electronics

N-CHANNEL

10 A

Other Transistors

METAL SEMICONDUCTOR

25 W

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

NEZ1011-4E

Renesas Electronics

N-CHANNEL

4.5 A

Other Transistors

METAL SEMICONDUCTOR

30 W

175 Cel

4.5 A

NE1280100

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

9.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

4

UNCASED CHIP

HETERO-JUNCTION

175 Cel

SILICON

UPPER

R-XUUC-N4

Not Qualified

HIGH RELIABILITY

2SK2595AX

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

PLASTIC/EPOXY

AMPLIFIER

17 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1.1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

NE8500295-6-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

2.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e6

NEM091803S-28-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

388 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

10 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

10 A

DUAL

R-PDFM-F12

SOURCE

Not Qualified

e6

2SK2595AXTB

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.1 A

DUAL

R-PDSO-F2

Not Qualified

e0

NE6500496

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

10 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4.5 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

25 W

175 Cel

GALLIUM ARSENIDE

4.5 A

DUAL

R-CDFM-F2

SOURCE

NEZ1414-5E

Renesas Electronics

N-CHANNEL

5 A

Other Transistors

METAL SEMICONDUCTOR

30 W

175 Cel

5 A

NEZ1011-3E

Renesas Electronics

N-CHANNEL

3 A

Other Transistors

METAL SEMICONDUCTOR

15 W

175 Cel

3 A

NE960R275

Renesas Electronics

N-CHANNEL

.3 A

Other Transistors

METAL SEMICONDUCTOR

1.5 W

175 Cel

.3 A

NEZ1011-2E

Renesas Electronics

N-CHANNEL

3 A

Other Transistors

METAL SEMICONDUCTOR

15 W

175 Cel

3 A

2SK3390IXTB-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

AMPLIFIER

17 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 A

DUAL

R-PDSO-G2

1

SOURCE

Not Qualified

20

260

NE6500496-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

4.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e6

NES1823S-90-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

12 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

TIN BISMUTH

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e6

NEM090603M-28-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

146 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

6 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

6 A

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e6

2SK2597

Renesas Electronics

N-CHANNEL

SINGLE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

NE8500295-8-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

2.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e6

NE650R479A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.6 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE650R279A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

2SK2596BXUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 A

SINGLE

R-PSSO-F3

Not Qualified

2SK2794

Renesas Electronics

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

DUAL

R-PDSO-G3

Not Qualified

NE6500379A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

5.6 A

4

MICROWAVE

Other Transistors

METAL SEMICONDUCTOR

22 W

150 Cel

GALLIUM ARSENIDE

TIN LEAD

1 A

QUAD

R-PQMW-F4

DRAIN

Not Qualified

e0

2SK2596BXTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 A

SINGLE

R-PSSO-F3

Not Qualified

RQA0010VXDQSTL-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

9 W

PLASTIC/EPOXY

16 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NES1823M-45

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

PLASTIC/EPOXY

AMPLIFIER

19 V

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLANGE MOUNT

Other Transistors

JUNCTION

165 W

150 Cel

GALLIUM ARSENIDE

TIN LEAD

DUAL

R-PDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

2SK3390IX

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

AMPLIFIER

17 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

2SK2794CX

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

10 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.7 A

DUAL

R-PDSO-F2

Not Qualified

NE650R279A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e6

NE651R479A-T1

Renesas Electronics

N-CHANNEL

Other Transistors

JUNCTION

150 Cel

2SK3391

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

NEM090303M-28

Renesas Electronics

N-CHANNEL

SINGLE

YES

79.5 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

8 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

8 A

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

RQA0003DNSTR-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

16 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.4 A

DUAL

S-PDSO-N3

1

SOURCE

Not Qualified

NE6510379A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

4

MICROWAVE

HETERO-JUNCTION

GALLIUM ARSENIDE

TIN BISMUTH

4.2 A

QUAD

R-CQMW-F4

SOURCE

Not Qualified

e6

NE8500200-RG-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

2.5 A

UPPER

R-XUUC-N

Not Qualified

HIGH RELIABILITY

e6

NE8500295-4-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

2.5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e6

NE960R575

Renesas Electronics

N-CHANNEL

.6 A

Other Transistors

METAL SEMICONDUCTOR

3 W

175 Cel

.6 A

2SK1575

Renesas Electronics

YES

CERAMIC, METAL-SEALED COFIRED

FLAT

RECTANGULAR

4

FLANGE MOUNT

DUAL

R-CDFM-F4

1

Not Qualified

20

260

NE8500200-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

2.5 A

UPPER

R-XUUC-N

Not Qualified

HIGH RELIABILITY

e6

2SK2596

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

NE004800-8

Renesas Electronics

2SK2596BX

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

2SK1999

Renesas Electronics

YES

CERAMIC, METAL-SEALED COFIRED

FLAT

RECTANGULAR

4

FLANGE MOUNT

DUAL

R-CDFM-F4

1

Not Qualified

20

260

2SK2596BXUR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 A

SINGLE

R-PSSO-F3

Not Qualified

NE6501077-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

9 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e6

NES1823S-90

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

12 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

125 W

175 Cel

GALLIUM ARSENIDE

TIN LEAD

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.