Renesas Electronics RF Power Field Effect Transistors (FET) 166

  1. Home
  2. RF Power Field Effect Transistors (FET)
Manufacturers (1)
    • Renesas Electronics
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NE5550979A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NE5550234-T1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

1

.6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

NE5550779A-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

17.8 W

1

2.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NE5550234-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

1

.6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

NE5550979A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

25 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NE5550779A-A

Renesas Electronics

N-CHANNEL

SINGLE

17.8 W

1

2.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NEM090603M-28

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

6 A

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

RQA0010VXDQS#H1

Renesas Electronics

N-CHANNEL

SINGLE

YES

9 W

1

1.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

NOT SPECIFIED

NOT SPECIFIED

NE6510379A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

4.2 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

4.2 A

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

18 W

150 Cel

GALLIUM ARSENIDE

TIN LEAD

4.2 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

RQA0010UXAQSTL-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

9 W

PLASTIC/EPOXY

16 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE960R200-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

9 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

3

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.35 A

UPPER

R-XUUC-N3

Not Qualified

e6

NES2427P-45

Renesas Electronics

N-CHANNEL

24 A

Other Transistors

METAL SEMICONDUCTOR

165 W

175 Cel

24 A

NE6501077

Renesas Electronics

N-CHANNEL

9 A

Other Transistors

METAL SEMICONDUCTOR

50 W

175 Cel

9 A

2SK3391JXTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.3 A

SINGLE

R-PSSO-F3

1

SOURCE

Not Qualified

NE6510179A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5.5 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

4

MICROWAVE

HETERO-JUNCTION

GALLIUM ARSENIDE

TIN LEAD

2.8 A

QUAD

R-CQMW-F4

SOURCE

Not Qualified

e0

NE650R279A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

MICROWAVE

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

TIN LEAD

.3 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

NE6500179A-T1

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN LEAD

2.5 A

QUAD

R-XQMW-F4

SOURCE

Not Qualified

e0

NEZ1414-2E

Renesas Electronics

N-CHANNEL

2.5 A

Other Transistors

METAL SEMICONDUCTOR

15 W

175 Cel

2.5 A

NES1823P-50

Renesas Electronics

N-CHANNEL

30 A

Other Transistors

METAL SEMICONDUCTOR

110 W

175 Cel

30 A

2SK2595AXUB

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.1 A

DUAL

R-PDSO-F2

Not Qualified

NES1821B-30

Renesas Electronics

N-CHANNEL

27 A

Other Transistors

METAL SEMICONDUCTOR

110 W

175 Cel

27 A

NE1280400

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

7.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

13

UNCASED CHIP

HETERO-JUNCTION

175 Cel

SILICON

UPPER

R-XUUC-N13

Not Qualified

HIGH RELIABILITY

NES1823P-140

Renesas Electronics

N-CHANNEL

76 A

Other Transistors

METAL SEMICONDUCTOR

270 W

175 Cel

76 A

NE004100-6

Renesas Electronics

NES1823S-45

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

12 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

TIN LEAD

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH EFFICIENCY

e0

NEM091803S-28

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

388 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

10 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

10 A

DUAL

R-PDFM-F4

SOURCE

Not Qualified

e0

NE8500200-WB

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

2.5 A

UNSPECIFIED

R-XXUC-N

HIGH RELIABILITY

NEM091203P-28-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

292 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

12 A

8

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

12 A

DUAL

R-PDFM-F8

SOURCE

Not Qualified

e6

NES1823M-240

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 V

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLANGE MOUNT

Other Transistors

JUNCTION

250 W

150 Cel

GALLIUM ARSENIDE

TIN LEAD

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e0

NE0041600-6

Renesas Electronics

NEM090303M-28-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

79.5 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

8 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8 A

DUAL

R-PDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

NES1720P-140

Renesas Electronics

N-CHANNEL

76 A

Other Transistors

METAL SEMICONDUCTOR

270 W

175 Cel

76 A

NE960R200

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

15 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

2.5 W

175 Cel

GALLIUM ARSENIDE

TIN LEAD

.35 A

UPPER

R-XUUC-N4

Not Qualified

e0

NE960R500

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

15 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

.7 A

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

5 W

175 Cel

GALLIUM ARSENIDE

TIN LEAD

.7 A

UPPER

R-XUUC-N4

Not Qualified

e0

NE650103M

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

10 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

5 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

33 W

150 Cel

GALLIUM ARSENIDE

TIN LEAD

5 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e0

NEZ1414-4E

Renesas Electronics

N-CHANNEL

5 A

Other Transistors

METAL SEMICONDUCTOR

30 W

175 Cel

5 A

NES1823M-240-A

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12 V

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLANGE MOUNT

JUNCTION

GALLIUM ARSENIDE

TIN BISMUTH

DUAL

R-CDFM-F4

SOURCE

Not Qualified

HIGH RELIABILITY

e6

NE004800-6

Renesas Electronics

RQA0001DNSTR-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

16 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 A

DUAL

S-PDSO-N2

1

SOURCE

Not Qualified

NE8500295-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2.5 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

13 W

175 Cel

GALLIUM ARSENIDE

2.5 A

DUAL

R-CDFM-F2

SOURCE

HIGH RELIABILITY

NE8500200-RG

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

C BAND

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

2.5 A

UNSPECIFIED

R-XXUC-N

HIGH RELIABILITY

NES2427P-140

Renesas Electronics

N-CHANNEL

76 A

Other Transistors

METAL SEMICONDUCTOR

270 W

150 Cel

76 A

2SK2595

Renesas Electronics

YES

CERAMIC, METAL-SEALED COFIRED

GULL WING

RECTANGULAR

2

SMALL OUTLINE

DUAL

R-CDSO-G2

Not Qualified

NE960R575-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e6

NEZ1011-8E

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

9 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

15 W

175 Cel

GALLIUM ARSENIDE

9 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

NE6500278

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

6

FLATPACK

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

10 A

DUAL

R-PDFP-F6

SOURCE

Not Qualified

HIGH RELIABILITY

NE960R500-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

9 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

3

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.7 A

UPPER

R-XUUC-N3

Not Qualified

e6

NEZ1011-5E

Renesas Electronics

N-CHANNEL

4.5 A

Other Transistors

METAL SEMICONDUCTOR

30 W

175 Cel

4.5 A

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.