RF Power Field Effect Transistors (FET)

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Manufacturers
    • Ampleon Netherlands B V
    • Broadcom
    • Freescale Semiconductor
    • Fujitsu
    • Gan Systems
    • IXYS Corporation
    • Infineon Technologies
    • Littelfuse
    • M/a-com Technology Solutions
    • Microchip Technology
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sumitomo Electric Industries
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Wolfspeed
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
    • COMMON SOURCE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .079 W
    • .4 W
    • .795 W
    • 1.6 W
    • 10 W
    • 100 W
    • 105 W
    • 1052 W
    • 108 W
    • 11.7 W
    • 110 W
    • 115 W
    • 116 W
    • 117 W
    • 118 W
    • 12.5 W
    • 120 W
    • 125 W
    • 130 W
    • 1300 W
    • 1333 W
    • 135 W
    • 139 W
    • 14 W
    • 140 W
    • 145 W
    • 146 W
    • 151 W
    • 152 W
    • 158 W
    • 159 W
    • 16 W
    • 160 W
    • 161 W
    • 165 W
    • 1670 W
    • 17.8 W
    • 170 W
    • 173 W
    • 175 W
    • 177 W
    • 18.8 W
    • 180 W
    • 182 W
    • 184 W
    • 186 W
    • 19 W
    • 19.5 W
    • 190 W
    • 196 W
    • 197 W
    • 2.5 W
    • 20 W
    • 20.5 W
    • 20.8 W
    • 200 W
    • 211 W
    • 216 W
    • 217 W
    • 218.8 W
    • 219 W
    • 220 W
    • 223 W
    • 224 W
    • 227 W
    • 230 W
    • 236 W
    • 25 W
    • 250 W
    • 252 W
    • 26.6 W
    • 26.7 W
    • 261 W
    • 265 W
    • 266 W
    • 269 W
    • 270 W
    • 273 W
    • 278 W
    • 289 W
    • 29 W
    • 290 W
    • 292 W
    • 294 W
    • 298 W
    • 3 W
    • 3.1 W
    • 300 W
    • 302 W
    • 307 W
    • 31 W
    • 31.2 W
    • 31.7 W
    • 31.8 W
    • 315 W
    • 317 W
    • 318 W
    • 324 W
    • 330 W
    • 335 W
    • 336 W
    • 343 W
    • 35 W
    • 350 W
    • 357 W
    • 36.5 W
    • 372 W
    • 38 W
    • 38.9 W
    • 380 W
    • 388 W
    • 389 W
    • 39 W
    • 398 W
    • 4 W
    • 40 W
    • 407 W
    • 417 W
    • 427 W
    • 43.75 W
    • 437 W
    • 437.5 W
    • 438 W
    • 44 W
    • 448 W
    • 449 W
    • 45 W
    • 473 W
    • 476 W
    • 48 W
    • 486 W
    • 498 W
    • 5 W
    • 500 W
    • 52.8 W
    • 530 W
    • 565 W
    • 58 W
    • 59 W
    • 6 W
    • 603 W
    • 61.4 W
    • 62.5 W
    • 625 W
    • 643 W
    • 647 W
    • 648 W
    • 65 W
    • 68 W
    • 690 W
    • 7 W
    • 700 W
    • 73 W
    • 74 W
    • 75 W
    • 761 W
    • 79 W
    • 79.5 W
    • 795 W
    • 8.3 W
    • 800 W
    • 83.3 W
    • 86 W
    • 87.5 W
    • 9 W
    • 92 W
    • 93 W
    • 95 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 104 V
    • 105 V
    • 106 V
    • 108 V
    • 110 V
    • 112 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 130 V
    • 133 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 160 V
    • 17 V
    • 170 V
    • 177 V
    • 179 V
    • 19 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 28 V
    • 3.8 V
    • 30 V
    • 36 V
    • 4.2 V
    • 40 V
    • 5.5 V
    • 50 V
    • 500 V
    • 6 V
    • 60 V
    • 65 V
    • 650 V
    • 66 V
    • 68 V
    • 7 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 84 V
    • 89 V
    • 9 V
    • 90 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 10.75 dB
    • 11 dB
    • 11.3 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 12.7 dB
    • 12.9 dB
    • 13 dB
    • 13.3 dB
    • 13.5 dB
    • 14 dB
    • 14.1 dB
    • 14.2 dB
    • 14.3 dB
    • 14.5 dB
    • 14.75 dB
    • 14.9 dB
    • 15 dB
    • 15.5 dB
    • 15.55 dB
    • 15.75 dB
    • 16 dB
    • 16.2 dB
    • 16.5 dB
    • 16.7 dB
    • 17 dB
    • 17.4 dB
    • 17.5 dB
    • 17.6 dB
    • 18 dB
    • 18.5 dB
    • 18.9 dB
    • 19 dB
    • 19.5 dB
    • 20 dB
    • 20.5 dB
    • 21 dB
    • 23 dB
    • 23.5 dB
    • 24 dB
    • 24.5 dB
    • 26.8 dB
    • 5.5 dB
    • 7.5 dB
    • 8.5 dB
    • 9 dB
    • 9.5 dB
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
Highest Frequency Band
    • C BAND
    • HIGH FREQUENCY BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Pulsed Drain Current (IDM)
    • 72 A
Maximum Drain Current (Abs) (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .83 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 14 A
    • 15 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.5 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 33 A
    • 34 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 46 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 6 A
    • 6.2 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 9 A
No. of Terminals
    • 10
    • 12
    • 13
    • 14
    • 16
    • 2
    • 24
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • 1.5 W
    • 10 W
    • 10.5 W
    • 100 W
    • 110 W
    • 115 W
    • 115.4 W
    • 117 W
    • 118 W
    • 12 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 162.5 W
    • 165 W
    • 175 W
    • 18 W
    • 185 W
    • 187 W
    • 187.5 W
    • 2.5 W
    • 20 W
    • 21.4 W
    • 215 W
    • 22 W
    • 22.7 W
    • 220 W
    • 225 W
    • 23 W
    • 23.1 W
    • 25 W
    • 250 W
    • 270 W
    • 28.3 W
    • 280 W
    • 3 W
    • 3.3 W
    • 30 W
    • 300 W
    • 32.5 W
    • 33 W
    • 330 W
    • 37.5 W
    • 38 W
    • 39.5 W
    • 4 W
    • 40.5 W
    • 42.8 W
    • 42.9 W
    • 48 W
    • 5 W
    • 50 W
    • 500 W
    • 60 W
    • 62.5 W
    • 68 W
    • 7.5 W
    • 70 W
    • 75 W
    • 83.3 W
    • 85 W
    • 87.5 W
    • 92 W
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 125 Cel
    • 150 Cel
    • 165 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
    • 90 Cel
Transistor Element Material
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
    • SILICON CARBIDE
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
Terminal Finish
    • GOLD
    • GOLD (10)
    • GOLD NICKEL
    • GOLD OVER NICKEL
    • Gold (Au)
    • Gold (Au) - with Nickel (Ni) barrier
    • Gold/Nickel (Au/Ni)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • NICKEL PALLADIUM GOLD
    • Nickel/Gold (Ni/Au)
    • Nickel/Gold/Cobalt (Ni/Au/Co)
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
Maximum Drain-Source On Resistance
    • .112 ohm
    • .15 ohm
    • .3 ohm
    • .35 ohm
    • .5 ohm
    • .6 ohm
    • .75 ohm
    • 1.05 ohm
    • 1.25 ohm
    • 1.5 ohm
    • 2.5 ohm
    • 2.7 ohm
    • 5 ohm
Maximum Drain Current (ID)
    • .00001 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • .9 A
    • .95 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.25 A
    • 1.5 A
    • 1.65 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 10.4 A
    • 11 A
    • 11.4 A
    • 11.5 A
    • 112 A
    • 12 A
    • 13 A
    • 13.9 A
    • 14 A
    • 15 A
    • 15.5 A
    • 16 A
    • 16.5 A
    • 17 A
    • 18 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.8 A
    • 20 A
    • 22 A
    • 24 A
    • 25 A
    • 26 A
    • 27 A
    • 27.8 A
    • 28 A
    • 29 A
    • 3 A
    • 3.1 A
    • 3.3 A
    • 3.5 A
    • 3.6 A
    • 3.9 A
    • 30 A
    • 31 A
    • 32 A
    • 32.5 A
    • 33 A
    • 34 A
    • 35 A
    • 36 A
    • 37 A
    • 38 A
    • 39 A
    • 4 A
    • 4.2 A
    • 4.25 A
    • 4.5 A
    • 40 A
    • 42 A
    • 45 A
    • 46 A
    • 48 A
    • 49 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 54 A
    • 56 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 64 A
    • 7 A
    • 7.2 A
    • 7.5 A
    • 72 A
    • 76 A
    • 8 A
    • 8.2 A
    • 8.5 A
    • 8.7 A
    • 88 A
    • 9 A
    • 90 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • O-CRFM-F4
    • O-CXDB-F6
    • O-CXFM-F6
    • O-MBCY-W3
    • O-PRFM-F4
    • R-CDFM-F2
    • R-CDFM-F3
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFM-F6
    • R-CDFM-F8
    • R-CDFM-G2
    • R-CDFM-G4
    • R-CDFP-F2
    • R-CDFP-F3
    • R-CDFP-F4
    • R-CDFP-F6
    • R-CDFP-F8
    • R-CDFP-X6
    • R-CDSO-F2
    • R-CDSO-G2
    • R-CDSO-G4
    • R-CDSO-G8
    • R-CDSO-N2
    • R-CQFM-F6
    • R-CQFM-F8
    • R-CQFM-X6
    • R-CQFP-F6
    • R-CQFP-F8
    • R-CQFP-X2
    • R-CQFP-X4
    • R-CQFP-X6
    • R-CQMW-F4
    • R-CQSO-X4
    • R-CQSO-X6
    • R-MDFM-F4
    • R-MDSO-G8
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-C6
    • R-PDFM-C8
    • R-PDFM-F12
    • R-PDFM-F16
    • R-PDFM-F2
    • R-PDFM-F3
    • R-PDFM-F4
    • R-PDFM-F6
    • R-PDFM-F8
    • R-PDFM-G16
    • R-PDFM-G2
    • R-PDFM-G4
    • R-PDFP-F2
    • R-PDFP-F4
    • R-PDFP-F6
    • R-PDFP-F8
    • R-PDSO-F16
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PDSO-N10
    • R-PDSO-N12
    • R-PDSO-N16
    • R-PDSO-N6
    • R-PDSO-N8
    • R-PQCC-N4
    • R-PQFP-F4
    • R-PQFP-F6
    • R-PQFP-X4
    • R-PQMW-F4
    • R-PQSO-F3
    • R-PQSO-F4
    • R-PQSO-N4
    • R-PSFM-T3
    • R-PSIP-T3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-XBCC-N4
    • R-XBCC-N6
    • R-XDFM-F2
    • R-XDFM-F4
    • R-XDFP-F2
    • R-XDFP-F4
    • R-XDSO-G8
    • R-XQFP-F4
    • R-XQMW-F
    • R-XQMW-F4
    • R-XQSO-F4
    • R-XUUC-N
    • R-XUUC-N13
    • R-XUUC-N14
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XUUC-N9
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFM-F4
    • S-CDFP-F2
    • S-CDSO-G2
    • S-CQCC-N12
    • S-CQCC-N16
    • S-CQFM-F6
    • S-CQFP-F6
    • S-CQMW-F4
    • S-PBCC-N24
    • S-PDSO-N10
    • S-PDSO-N2
    • S-PDSO-N3
    • S-PDSO-N6
    • S-PDSO-N8
    • S-PQCC-N12
    • S-PQCC-N5
    • S-PQSO-N4
    • S-XBCC-N3
    • S-XDSO-G2
    • S-XDSO-N2
    • S-XQCC-N16
    • X-CXMW-F4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • 6
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • ISOLATED
    • SOURCE
Qualification
    • Not Qualified
Additional Features
    • AVALANCHE RATED
    • ESD PROTECTED
    • ESD PROTECTED, HIGH RELIABILITY
    • ESD PROTECTION
    • ESD PROTECTION, HIGH RELIABILITY
    • HGH RELIABILITY
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-247AD
    • TO-270
    • TO-270AA
    • TO-270BA
    • TO-270BB
    • TO-272
    • TO-272AA
    • TO-272BA
    • TO-39
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 240
    • 245
    • 250
    • 255
    • 260
    • 270
    • 280
    • NOT APPLICABLE
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .13 pF
    • .15 pF
    • .186 pF
    • .2 pF
    • .26 pF
    • .3 pF
    • .4 pF
    • .46 pF
    • .53 pF
    • .6 pF
    • .7 pF
    • 1 pF
    • 1.04 pF
    • 1.1 pF
    • 1.16 pF
    • 1.6 pF
    • 10 pF
    • 2 pF
    • 2.43 pF
    • 2.5 pF
    • 2.8 pF
    • 2.98 pF
    • 21 pF
    • 24 pF
    • 25 pF
    • 3 pF
    • 3.3 pF
    • 35 pF
    • 40 pF
    • 5.2 pF
    • 65 pF
    • 8 pF
Reference Standard
    • ESA-SCC-5614/008
    • IEC-60134
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BLL1214-35,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

110 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

75 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

935314934128

NXP Semiconductors

40

260

MRF19060LR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLS6G2731-120,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

33 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

33 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

40

245

BLF7G27LS-200PB

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 3 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

3

S BAND

8

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

48 A

DUAL

R-CDFP-F8

SOURCE

MRF281SR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

20 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFP-F2

SOURCE

Not Qualified

40

260

934065325112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

16 A

DUAL

R-CDFM-F4

SOURCE

BLC9G24LS-170AV

NXP Semiconductors

935323762128

NXP Semiconductors

40

260

BLL8H0514L-130

NXP Semiconductors

AFT18S290-13SR3

NXP Semiconductors

N-CHANNEL

SINGLE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40

260

934060891112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

13 A

DUAL

R-CDFM-F2

SOURCE

BLP25M705

NXP Semiconductors

BLF4G10-160

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

15 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

BLF7G27L-140

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

28 A

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLM6G22-30,135

NXP Semiconductors

TIN

3

e3

30

245

BLA6G1011LS-200RG

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

49 A

NOT SPECIFIED

NOT SPECIFIED

MRF5S19060MR1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

218.8 W

PLASTIC/EPOXY

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

Tin/Lead (Sn/Pb)

DUAL

R-PDFP-F4

3

SOURCE

Not Qualified

TO-270

e0

40

260

BLA1011-10

NXP Semiconductors

N-CHANNEL

SINGLE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

75 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2.2 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

2.2 A

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

935311773178

NXP Semiconductors

40

260

934064452112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

SQUARE

ENHANCEMENT MODE

2

L BAND

6

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

11 A

QUAD

S-CQFM-F6

SOURCE

934065241118

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

S BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

32.5 A

DUAL

R-CDFP-F4

SOURCE

BLF574XRS

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

SOURCE

IEC-60134

935351859178

NXP Semiconductors

40

260

BLF888DS

NXP Semiconductors

BLM7G24S-30BG

NXP Semiconductors

MRF9130LSR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

298 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFP-F2

SOURCE

Not Qualified

HIGH EFFICIENCY

40

260

BLL1214-250R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

75 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

934063602112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

49 A

DUAL

R-CDFM-F2

SOURCE

934056520135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

12 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

A2V07H525-04NR6

NXP Semiconductors

3

40

260

934064584118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F2

SOURCE

ESD PROTECTED

934064461118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F2

SOURCE

934063207112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

32 A

DUAL

R-CDFP-F2

SOURCE

934061173135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

16.5 A

DUAL

R-CDFM-F2

SOURCE

BLF543

NXP Semiconductors

N-CHANNEL

SINGLE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

12 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2 A

6

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

25 W

200 Cel

SILICON

2.5 ohm

2 A

DUAL

R-CDFM-F6

ISOLATED

Not Qualified

HIGH RELIABILITY

934064583112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFM-F2

SOURCE

ESD PROTECTED

935313167528

NXP Semiconductors

TIN

3

e3

40

260

MRF1535NT1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

135 W

PLASTIC/EPOXY

AMPLIFIER

40 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

6 A

6

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

TIN

6 A

DUAL

R-PDFM-C6

3

SOURCE

Not Qualified

TO-272AA

e3

40

260

BLF8G22LS-140

NXP Semiconductors

NOT APPLICABLE

NOT SPECIFIED

NOT SPECIFIED

BLS7G2325L-105

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

28 A

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

934064444112

NXP Semiconductors

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

L BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

SOURCE

BLC9G20LS-120V

NXP Semiconductors

MRF7S21150HSR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFP-F2

SOURCE

Not Qualified

40

260

935314227128

NXP Semiconductors

MRF18030BLR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

83.3 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

GOLD

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

MRFG35010MT1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HIGH ELECTRON MOBILITY

22.7 W

85 Cel

GALLIUM ARSENIDE

Tin/Lead (Sn/Pb)

QUAD

R-PQSO-N4

1

SOURCE

Not Qualified

e0

40

260

MRF7S27130HSR3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-XDFM-F2

SOURCE

Not Qualified

40

260

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.