SINGLE RF Small Signal Field Effect Transistors (FET) 1,664

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration (1)
    • SINGLE
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BF2030WH6814XTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.04 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

BF998E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

260

JANTXV2N3823

Defense Logistics Agency

N-CHANNEL

SINGLE

NO

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-MBCY-W4

Not Qualified

2 pF

MIL-19500/375G

NTE312

Nte Electronics

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

1 pF

SST310-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

SILICON

Matte Tin (Sn)

DUAL

R-PDSO-G3

1

LOW NOISE

TO-236

e3

30

260

2N5486PBFREE

Central Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

10 dB

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

3

CYLINDRICAL

JUNCTION

.31 W

150 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

.03 A

BOTTOM

O-PBCY-T3

TO-92

e3

1 pF

ATF-38143-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4.5 V

15 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.58 W

160 Cel

GALLIUM ARSENIDE

MATTE TIN

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

ATF-541M4-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15.5 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

4

CHIP CARRIER

FET RF Small Signal

HIGH ELECTRON MOBILITY

.36 W

150 Cel

SILICON

GOLD

.12 A

BOTTOM

R-PBCC-N4

1

Not Qualified

LOW NOISE

e4

260

ATF-55143-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.1 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.27 W

150 Cel

SILICON

TIN LEAD

.1 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

ATF-55143-TR2G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.1 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.27 W

150 Cel

SILICON

MATTE TIN

.1 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

BF2030E6814HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

BF245B,126

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

.025 A

BOTTOM

O-PBCY-T3

Not Qualified

e3

MGF4964BL

Mitsubishi Electric

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

11.5 dB

FLAT

SQUARE

DEPLETION MODE

1

K BAND

.06 A

4

MICROWAVE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.05 W

125 Cel

GALLIUM ARSENIDE

.06 A

QUAD

S-PQMW-F4

NOT SPECIFIED

NOT SPECIFIED

MMBFJ211

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

NTE132

Nte Electronics

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-106

1.2 pF

PMBFJ310,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.5 pF

2SK54-C

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

.6 pF

BF1207,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.18 W

PLASTIC/EPOXY

AMPLIFIER

6 V

21 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

.03 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G6

ISOLATED

Not Qualified

LOW NOISE

e3

ATF-53189-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

14 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.3 A

3

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

1 W

150 Cel

SILICON

MATTE TIN

.3 A

SINGLE

R-PSSO-F3

2

SOURCE

Not Qualified

LOW NOISE

e3

260

ATF-38143-TR1G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4.5 V

15 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.58 W

160 Cel

GALLIUM ARSENIDE

MATTE TIN

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

MMBFJ305

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

FLC057WG

Fujitsu

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

Other Transistors

JUNCTION

3.75 W

175 Cel

GALLIUM ARSENIDE

DUAL

R-CDFM-F2

SOURCE

Not Qualified

HIGH RELIABILITY

2N5952

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

BF512,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

30

260

.4 pF

FHX35X

Fujitsu

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

4 V

8.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

FET RF Small Signal

HIGH ELECTRON MOBILITY

.29 W

175 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

HIGH RELIABILITY, LOW NOISE

ATF-58143-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.5 W

150 Cel

SILICON

MATTE TIN

.1 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

MRF966

Motorola

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

AMPLIFIER

10 V

FLAT

ROUND

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.08 A

4

DISK BUTTON

FET General Purpose Power

METAL SEMICONDUCTOR

125 Cel

GALLIUM ARSENIDE

Tin/Lead (Sn/Pb)

.08 A

RADIAL

O-PRDB-F4

Not Qualified

e0

2SK161

Toshiba

N-CHANNEL

SINGLE

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

e0

.15 pF

2SK192A-GR

Toshiba

N-CHANNEL

SINGLE

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

.65 pF

ATF-36077-STR

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.18 W

150 Cel

GALLIUM ARSENIDE

GOLD

RADIAL

O-CRDB-F4

1

SOURCE

Not Qualified

LOW NOISE

e4

260

ATF-58143-TR2G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.5 W

150 Cel

SILICON

MATTE TIN

.1 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

FLC301XP

Fujitsu

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

DEPLETION MODE

1

S BAND

12

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UPPER

R-XUUC-N12

Not Qualified

FLU17XM

Fujitsu

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

15 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

4

MICROWAVE

Other Transistors

JUNCTION

7.5 W

175 Cel

GALLIUM ARSENIDE

QUAD

R-CQMW-F4

SOURCE

Not Qualified

HIGH RELIABILITY

FSX017LG

Fujitsu

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 V

FLAT

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

DISK BUTTON

Other Transistors

JUNCTION

.22 W

175 Cel

GALLIUM ARSENIDE

UNSPECIFIED

X-CXDB-F4

SOURCE

Not Qualified

HIGH RELIABILITY

JANTX2N3821

Defense Logistics Agency

N-CHANNEL

SINGLE

NO

METAL

50 V

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-MBCY-W4

Qualified

3 pF

MIL-19500/375G

2N4221A

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N5246

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1 pF

2N5398

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

25 V

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

3N202

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

25 V

15 dB

WIRE

ROUND

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

SOURCE AND SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.03 pF

3N213

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

35 V

27 dB

WIRE

ROUND

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

SOURCE AND SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.05 pF

3N128

Texas Instruments

N-CHANNEL

SINGLE

NO

.33 W

METAL

AMPLIFIER

20 V

13.5 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.35 pF

3N225A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

20 V

WIRE

ROUND

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

.03 pF

2N5245

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1 pF

3N201

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

25 V

15 dB

WIRE

ROUND

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

SOURCE AND SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.03 pF

3N205

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

25 V

WIRE

ROUND

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

SOURCE AND SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.03 pF

3N203

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

25 V

20 dB

WIRE

ROUND

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

.05 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.05 A

BOTTOM

O-MBCY-W4

SOURCE AND SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.03 pF

2N5951

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

2N5950

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

2 pF

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.