YES RF Small Signal Field Effect Transistors (FET) 1,826

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • YES
    • NO
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MWT-PH11

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

7 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

X BAND

4

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-1771

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

R-CDFM-F2

1

SOURCE

Not Qualified

e4

MWT-1HG

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

9 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-1789SB

Littelfuse

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN

.35 A

SINGLE

R-PSSO-F4

3

SOURCE

Not Qualified

LOW NOISE

e3

MWT-4SN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

7.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-2HP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

8 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

7

UNCASED CHIP

FET RF Small Signal

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N7

Not Qualified

.05 pF

MWT-173

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

MICROWAVE

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

GOLD

UNSPECIFIED

X-CXMW-F4

2

Not Qualified

e4

.06 pF

MWT-7SP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-4LN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

8 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-S7SN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

6

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N6

Not Qualified

.027 pF

MWT-8SP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

6.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

7

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N7

Not Qualified

.05 pF

MWT-13HP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

10

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N10

Not Qualified

.07 pF

MWT-7GP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

9 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-PH5

Littelfuse

N-CHANNEL

YES

UNSPECIFIED

18 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

X BAND

6

UNCASED CHIP

FET RF Small Signal

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N6

Not Qualified

MWT-S773

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

KU BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

UNSPECIFIED

X-CXMW-F4

2

Not Qualified

LOW NOISE

e4

.027 pF

MWT-1SG

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

9 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-8HP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

7

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N7

Not Qualified

.05 pF

MWT-5SG

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

7 V

9 dB

NO LEAD

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

K BAND

5

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N5

Not Qualified

MWT-LP7

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

3

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N3

Not Qualified

LOW NOISE

.03 pF

MWT-9SP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

7.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

.08 pF

MWT-PH8

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

9 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

6

UNCASED CHIP

FET RF Small Signal

HIGH ELECTRON MOBILITY

3.3 W

175 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N6

Not Qualified

MWT-9HP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

8 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

.08 pF

MWT-1789

Littelfuse

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

8 V

10 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

.4 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

2.5 W

150 Cel

SILICON

TIN

.4 A

SINGLE

R-PSSO-F4

3

SOURCE

Not Qualified

e3

MWT-17

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

7

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UNSPECIFIED

R-XXUC-N

SOURCE

Not Qualified

LOW NOISE

.25 pF

MWT-PH770

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KA BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

GOLD

RADIAL

R-XRDB-F4

1

SOURCE

Not Qualified

e4

.03 pF

MWT-S7

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

6

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N6

Not Qualified

LOW NOISE

.027 pF

VMMK-1225-TR1G

Broadcom

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

5 V

8.7 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

.05 A

8

CHIP CARRIER

FET RF Small Signal

HIGH ELECTRON MOBILITY

.25 W

GALLIUM ARSENIDE

TIN

.05 A

DUAL

R-XDCC-N8

1

SOURCE

Not Qualified

e3

260

ATF-10236-TR1

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

12 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

MICROWAVE

JUNCTION

GALLIUM ARSENIDE

UNSPECIFIED

X-CXMW-F4

Not Qualified

VMMK-1225-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

5 V

8.7 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

.05 A

8

CHIP CARRIER

FET RF Small Signal

HIGH ELECTRON MOBILITY

.25 W

GALLIUM ARSENIDE

TIN

.05 A

DUAL

R-XDCC-N8

1

SOURCE

Not Qualified

e3

260

ATF-10135

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

12 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

MICROWAVE

JUNCTION

GALLIUM ARSENIDE

UNSPECIFIED

X-CXMW-F4

ATF-13336-TR1

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

8 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

KU BAND

4

MICROWAVE

JUNCTION

GALLIUM ARSENIDE

TIN LEAD

UNSPECIFIED

X-CXMW-F4

Not Qualified

e0

ATF-10136-TR1

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

12 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

MICROWAVE

JUNCTION

GALLIUM ARSENIDE

UNSPECIFIED

X-CXMW-F4

Not Qualified

ATF-10736-TR1

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

12 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

MICROWAVE

JUNCTION

GALLIUM ARSENIDE

UNSPECIFIED

X-CXMW-F4

Not Qualified

VMMK-1218-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

5 V

6.7 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

KU BAND

.1 A

3

CHIP CARRIER

FET RF Small Signal

HIGH ELECTRON MOBILITY

.3 W

GALLIUM ARSENIDE

MATTE TIN

.1 A

BOTTOM

R-XBCC-N3

1

SOURCE

Not Qualified

e3

260

ATF-33143-TR2

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

13.5 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.6 W

160 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e0

ATF-34143-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.725 W

160 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

ATF-501P8-TR1

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

13.5 dB

NO LEAD

SQUARE

ENHANCEMENT MODE

1

L BAND

1 A

8

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

3.5 W

150 Cel

SILICON

MATTE TIN

1 A

DUAL

S-PDSO-N8

1

SOURCE

Not Qualified

LOW NOISE

MO-229

e3

260

ATF-36163-TR2G

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

9.4 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

KU BAND

.04 A

6

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.18 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.04 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW NOISE

e3

260

ATF-36077-TR

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

GOLD

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e4

ATF-521P8-TR1

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

15.5 dB

NO LEAD

SQUARE

ENHANCEMENT MODE

1

L BAND

.5 A

8

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

1.5 W

150 Cel

SILICON

MATTE TIN

.5 A

DUAL

S-PDSO-N8

1

SOURCE

Not Qualified

LOW NOISE

MO-229

e3

260

ATF-35143-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

14 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

.08 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.3 W

160 Cel

SILICON

TIN LEAD

.08 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

ATF-58143-BLK

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.5 W

150 Cel

SILICON

TIN LEAD

.1 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

ATF-54143

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

C BAND

4

SMALL OUTLINE

HIGH ELECTRON MOBILITY

SILICON

.12 A

DUAL

R-PDSO-G4

NOT SPECIFIED

NOT SPECIFIED

ATF-36077TR1G

Broadcom

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3 V

11 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

KU BAND

4

MICROWAVE

HIGH ELECTRON MOBILITY

SILICON

GOLD

UNSPECIFIED

X-CXMW-F4

1

SOURCE

Not Qualified

e4

ATF-331M4-BLK

Broadcom

N-CHANNEL

SINGLE

YES

METAL

AMPLIFIER

5.5 V

13.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.4 W

160 Cel

SILICON

GOLD

DUAL

R-MDSO-N4

1

Not Qualified

LOW NOISE

e4

260

ATF-531P8-BLKG

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

18.5 dB

NO LEAD

SQUARE

ENHANCEMENT MODE

1

C BAND

8

SMALL OUTLINE

HIGH ELECTRON MOBILITY

SILICON

.3 A

DUAL

S-PDSO-N8

SOURCE

Not Qualified

LOW NOISE

MO-229

ATF-521P8-TR2

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

7 V

15.5 dB

NO LEAD

SQUARE

ENHANCEMENT MODE

1

L BAND

.5 A

8

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

1.5 W

150 Cel

SILICON

MATTE TIN

.5 A

DUAL

S-PDSO-N8

1

SOURCE

Not Qualified

LOW NOISE

MO-229

e3

260

ATF-36163-TR2

Broadcom

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

9.4 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

KU BAND

.04 A

6

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.18 W

150 Cel

GALLIUM ARSENIDE

TIN LEAD

.04 A

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e0

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.