YES RF Small Signal Field Effect Transistors (FET) 1,826

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • YES
    • NO
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NE34018-64

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

14 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

HETERO-JUNCTION

SILICON

TIN LEAD

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

3SK242-T2-V13

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.08 pF

BB301CAW-TL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.1 W

PLASTIC/EPOXY

AMPLIFIER

6 V

22 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

20

260

.04 pF

3SK242-T1-VAB

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.08 pF

3SK253U1G

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

LOW NOISE

.03 pF

3SK222-VBA

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

.03 pF

NE76184B-T1K

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

FLAT

ROUND

DEPLETION MODE

1

X BAND

4

DISK BUTTON

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

RADIAL

O-CRDB-F4

LOW NOISE

NE722S01-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

GULL WING

UNSPECIFIED

DEPLETION MODE

1

X BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

.04 A

UNSPECIFIED

X-PXMW-G4

Not Qualified

LOW NOISE

e6

3SK234

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

22 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.03 pF

NE900275

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

20 V

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.06 A

2

FLANGE MOUNT

METAL SEMICONDUCTOR

3 W

GALLIUM ARSENIDE

.06 A

DUAL

R-CDFM-F2

2SK1215IGFTL-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

24 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

NE72218-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

TIN BISMUTH

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e6

NE25139T1U73

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

13 V

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.035 A

4

SMALL OUTLINE

METAL SEMICONDUCTOR

.2 W

125 Cel

GALLIUM ARSENIDE

.035 A

DUAL

R-PDSO-G4

.03 pF

NE38018T2

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12.5 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

HETERO-JUNCTION

SILICON

TIN LEAD

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e0

BB101CAU

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

SILICON

.025 A

DUAL

R-PDSO-G3

Not Qualified

2SK2113YY-TL

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

3.5 V

GULL WING

RECTANGULAR

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

GALLIUM ARSENIDE

.06 A

DUAL

R-PDSO-G3

Not Qualified

3SK136

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

17 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

RQA0011DNS#G1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

16 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.8 A

BOTTOM

R-PBCC-N3

SOURCE

4.5 pF

2SK360IGE01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

3SK244-UID

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.025 pF

BB202M

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

DUAL

R-PDSO-G4

Not Qualified

3SK246VBB

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

19 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

LOW NOISE

.03 pF

3SK242-T1-VAA

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.25 W

125 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.08 pF

NE72084-M

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

5 V

FLAT

UNSPECIFIED

DEPLETION MODE

1

C BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.15 A

QUAD

X-CQMW-F4

LOW NOISE

BB401M

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

DUAL

R-PDSO-G4

Not Qualified

3SK222-V22

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

21 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e0

.03 pF

3SK298ZP-TL-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

12 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.04 pF

BB101MAU-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

16 dB

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

.03 pF

3SK297

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

12 V

12 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

.04 pF

NE3514S02-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

8 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

TIN BISMUTH

.015 A

QUAD

R-PQMW-F4

Not Qualified

LOW NOISE

e6

NE3516S02-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

13 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.06 A

4

MICROWAVE

HETERO-JUNCTION

.165 W

125 Cel

GALLIUM ARSENIDE

.06 A

QUAD

S-PQMW-F4

NE3512S02-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

TIN BISMUTH

.015 A

QUAD

R-PQMW-F4

Not Qualified

LOW NOISE

e6

NE3514S02-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

8 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

TIN BISMUTH

.015 A

QUAD

R-PQMW-F4

Not Qualified

LOW NOISE

e6

NE3503M04-T2

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

10.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.07 A

4

SMALL OUTLINE

FET RF Small Signal

HETERO-JUNCTION

.125 W

125 Cel

SILICON

TIN LEAD

.015 A

DUAL

R-PDSO-F4

Not Qualified

e0

NE3510M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.125 W

PLASTIC/EPOXY

AMPLIFIER

3 V

14.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

GALLIUM ARSENIDE

.03 A

DUAL

R-PDSO-F4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3508M04-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.175 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HETERO-JUNCTION

150 Cel

SILICON

TIN BISMUTH

.03 A

DUAL

R-PDSO-F4

DRAIN

Not Qualified

LOW NOISE

e6

NE350184C-T1A-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.07 A

4

DISK BUTTON

FET RF Small Signal

JUNCTION

.165 W

150 Cel

SILICON

TIN BISMUTH

.015 A

RADIAL

O-CRDB-F4

Not Qualified

e6

NE3509M04

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

4 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

HETERO-JUNCTION

SILICON

TIN LEAD

.06 A

DUAL

R-PDSO-F4

Not Qualified

e0

NE3509M14-T3-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

3 V

16.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

GALLIUM ARSENIDE

.02 A

DUAL

R-PDSO-F4

NOT SPECIFIED

NOT SPECIFIED

NE3511S02-T1C

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

12.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

HETERO-JUNCTION

SILICON

TIN LEAD

UNSPECIFIED

R-PXMW-F4

Not Qualified

LOW NOISE

e0

NE3521M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

9 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

.07 A

4

SMALL OUTLINE

HETERO-JUNCTION

.125 W

125 Cel

GALLIUM ARSENIDE

.015 A

DUAL

R-PDSO-F4

NE3509M04-T2

Renesas Electronics

N-CHANNEL

YES

PLASTIC/EPOXY

4 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

HETERO-JUNCTION

SILICON

TIN LEAD

.06 A

DUAL

R-PDSO-F4

Not Qualified

e0

NE3513M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

11.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

KU BAND

.06 A

4

SMALL OUTLINE

HETERO-JUNCTION

.125 W

125 Cel

GALLIUM ARSENIDE

.015 A

DUAL

R-PDSO-F4

NE3511S02-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

TIN BISMUTH

.02 A

QUAD

R-PQMW-F4

Not Qualified

e6

NE3510M04-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.125 W

PLASTIC/EPOXY

AMPLIFIER

3 V

14.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

GALLIUM ARSENIDE

.03 A

DUAL

R-PDSO-F4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3521M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

9 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

.07 A

4

SMALL OUTLINE

HETERO-JUNCTION

.125 W

125 Cel

GALLIUM ARSENIDE

.015 A

DUAL

R-PDSO-F4

NE3516S02-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

13 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.06 A

4

MICROWAVE

HETERO-JUNCTION

.165 W

125 Cel

GALLIUM ARSENIDE

.06 A

QUAD

S-PQMW-F4

NE3503M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.07 A

4

SMALL OUTLINE

FET RF Small Signal

HETERO-JUNCTION

.125 W

125 Cel

SILICON

TIN BISMUTH

.015 A

DUAL

R-PDSO-F4

Not Qualified

e6

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.