YES RF Small Signal Field Effect Transistors (FET) 1,826

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Infineon Technologies
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount (1)
    • YES
    • NO
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NE3509M04-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

3 V

16 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HETERO-JUNCTION

150 Cel

SILICON

TIN BISMUTH

.02 A

DUAL

R-PDSO-F4

Not Qualified

e6

NE3503M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.07 A

4

SMALL OUTLINE

FET RF Small Signal

HETERO-JUNCTION

.125 W

125 Cel

SILICON

.015 A

DUAL

R-PDSO-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3517S03-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

GALLIUM ARSENIDE

.015 A

UNSPECIFIED

R-PXMW-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3509M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

3 V

16 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HETERO-JUNCTION

150 Cel

SILICON

TIN BISMUTH

.02 A

DUAL

R-PDSO-F4

Not Qualified

e6

NE3519M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

3 V

16.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

GALLIUM ARSENIDE

.025 A

DUAL

R-PDSO-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3520S03-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

11.5 dB

FLAT

SQUARE

ENHANCEMENT MODE

1

K BAND

.07 A

4

MICROWAVE

HETERO-JUNCTION

.165 W

125 Cel

GALLIUM ARSENIDE

.015 A

QUAD

S-PQMW-F4

NE3511S02-T1D

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

12.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

HETERO-JUNCTION

SILICON

TIN LEAD

UNSPECIFIED

R-PXMW-F4

Not Qualified

LOW NOISE

e0

NE3503M04

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

10.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.07 A

4

SMALL OUTLINE

FET RF Small Signal

HETERO-JUNCTION

.125 W

125 Cel

SILICON

TIN LEAD

.015 A

DUAL

R-PDSO-F4

Not Qualified

e0

NE3511S02-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

TIN BISMUTH

.02 A

QUAD

R-PQMW-F4

Not Qualified

e6

NE3508M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.175 W

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HETERO-JUNCTION

150 Cel

SILICON

.03 A

DUAL

R-PDSO-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3510M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.125 W

PLASTIC/EPOXY

AMPLIFIER

3 V

14.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

GALLIUM ARSENIDE

.03 A

DUAL

R-PDSO-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3513M04-T2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

11.5 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

KU BAND

.06 A

4

SMALL OUTLINE

HETERO-JUNCTION

.125 W

125 Cel

GALLIUM ARSENIDE

.015 A

DUAL

R-PDSO-F4

NE350184C-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.07 A

4

DISK BUTTON

FET RF Small Signal

JUNCTION

.165 W

150 Cel

SILICON

TIN BISMUTH

.015 A

RADIAL

O-CRDB-F4

Not Qualified

e6

NE3520S03-T1C-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

4 V

11.5 dB

FLAT

SQUARE

ENHANCEMENT MODE

1

K BAND

.07 A

4

MICROWAVE

HETERO-JUNCTION

.165 W

125 Cel

GALLIUM ARSENIDE

.015 A

QUAD

S-PQMW-F4

NE3517S03-T1D-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

K BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

GALLIUM ARSENIDE

.015 A

UNSPECIFIED

R-PXMW-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3509M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

3 V

16 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

Other Transistors

HETERO-JUNCTION

150 Cel

SILICON

.02 A

DUAL

R-PDSO-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NE3519M04-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

3 V

16.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

GALLIUM ARSENIDE

.025 A

DUAL

R-PDSO-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MWT-A9SN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

5.8 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-H770

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

SQUARE

DEPLETION MODE

1

KA BAND

4

MICROWAVE

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

QUAD

S-CQMW-F4

Not Qualified

.04 pF

MWT-S7LN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

6

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N6

Not Qualified

LOW NOISE

.027 pF

MWT-PH4

Littelfuse

N-CHANNEL

YES

UNSPECIFIED

AMPLIFIER

6.5 V

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

4

UNCASED CHIP

FET RF Small Signal

HIGH ELECTRON MOBILITY

.72 W

175 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

ISOLATED

MWT-PH15

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

10 dB

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

KA BAND

11

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N11

SOURCE

Not Qualified

.07 pF

MWT-5GG

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

7 V

NO LEAD

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

K BAND

5

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N5

Not Qualified

MWT-15

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

11

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

.03 pF

MWT-1GG

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

8.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-H773

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

KA BAND

4

MICROWAVE

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UNSPECIFIED

X-CXMW-F4

Not Qualified

.04 pF

MWT-6SP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

7 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

7

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N7

Not Qualified

.07 pF

MWT-PH16

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

15

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UPPER

R-XUUC-N15

Not Qualified

.1 pF

MWT-PH773

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

12 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KA BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

GOLD

RADIAL

R-XRDB-F4

2

SOURCE

Not Qualified

e4

.03 pF

MWT-4GN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

6 V

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-LP773

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

KA BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

UNSPECIFIED

X-CXMW-F4

2

Not Qualified

LOW NOISE

e4

.03 pF

MWT-471

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

SQUARE

DEPLETION MODE

1

K BAND

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

LOW NOISE

e4

.02 pF

MWT-LP770

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

SQUARE

DEPLETION MODE

1

KA BAND

4

MICROWAVE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

QUAD

S-CQMW-F4

1

Not Qualified

LOW NOISE

e4

.03 pF

MWT-A9GN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

5.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-A9LN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

8.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

.1 pF

MWT-4

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

8 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

K BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

.02 pF

MWT-7HP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

10 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

Other Transistors

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

MWT-H15

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

11 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UPPER

R-XUUC-N

Not Qualified

.06 pF

MWT-16

Littelfuse

N-CHANNEL

YES

UNSPECIFIED

AMPLIFIER

7.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

K BAND

15

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N15

Not Qualified

.06 pF

MWT-473

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

8 dB

FLAT

UNSPECIFIED

DEPLETION MODE

1

K BAND

4

MICROWAVE

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

GOLD

UNSPECIFIED

X-CXMW-F4

2

Not Qualified

LOW NOISE

e4

.02 pF

MWT-5HG

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

7 V

10 dB

NO LEAD

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

K BAND

5

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N5

Not Qualified

MWT-PH7

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

12 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KA BAND

3

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

UPPER

R-XUUC-N3

SOURCE

Not Qualified

.03 pF

MWT-171

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

SQUARE

DEPLETION MODE

1

X BAND

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

e4

.06 pF

MWT-S771

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

10 dB

FLAT

SQUARE

DEPLETION MODE

1

KU BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

GOLD

DUAL

S-CDFM-F2

1

Not Qualified

LOW NOISE

e4

.027 pF

MWT-A9HN

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7 V

5.8 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

150 Cel

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

LOW NOISE

MWT-1

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

9 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N4

Not Qualified

.06 pF

MWT-6HP

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

7.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

7

UNCASED CHIP

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

UPPER

R-XUUC-N7

Not Qualified

.07 pF

MWT-170

Littelfuse

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

SQUARE

DEPLETION MODE

1

X BAND

4

MICROWAVE

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

GOLD

QUAD

S-CQMW-F4

1

Not Qualified

e4

.06 pF

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.