Infineon Technologies RF Small Signal Field Effect Transistors (FET) 305

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Manufacturers (1)
    • Infineon Technologies
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

CFY66-08PS

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

ESA/SCC 5613/002

CFY6708PPZZZA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

.06 A

RADIAL

O-CRDB-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

CLY29-10

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

14 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

GTVA104001FAV1R2

Infineon Technologies

225 Cel

BG3123RH6327XTSA1

Infineon Technologies

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 A

DUAL

R-PDSO-G6

LOW NOISE

CFY67-08S

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

BF5020WH6327XTSA1

Infineon Technologies

CLX30-05S

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

17 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.84 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.84 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

BF5020W

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

AEC-Q101

CLX27-05H

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

18 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

.42 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

3.38 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.42 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

CLY32-00P

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

6.75 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

ESA/SCC 5614/006

CFY35/23E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

8 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

JUNCTION

GALLIUM ARSENIDE

.06 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

PTVA043502ECV1R250

Infineon Technologies

BF1005SR

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

AEC-Q101

BG5120KH6327XTSA1

Infineon Technologies

CFY25-20H

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

8.5 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

.08 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.25 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.08 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

CFY25-20PH

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

8.5 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

.08 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.25 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.08 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

BF1005E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

260

CFY66-08H

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

ESA/SCC 5613/002

BG5130R

Infineon Technologies

N-CHANNEL

COMPLEX

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

.025 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

CLY32-10ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

11.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

6.75 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

ESA/SCC 5614/006

CFY6710ESZZZA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10.5 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

.06 A

RADIAL

O-CRDB-F4

SOURCE

ESA/SCC 5613/004

CFY67-10P

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10.5 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

BF1005SW

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

12 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

CLX27-10ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

18 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

.42 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

3.38 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.42 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

CFH400T

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

.08 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.15 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.08 A

DUAL

R-PDSO-F4

Not Qualified

LOW NOISE

e3

BF5020R

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

AEC-Q101

CFY27-PS

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 V

17.5 dB

FLAT

ROUND

DEPLETION MODE

1

KU BAND

.42 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.9 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.42 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

CLY10

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

9 V

9 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

S BAND

4

SMALL OUTLINE

JUNCTION

GALLIUM ARSENIDE

MATTE TIN

2.1 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

e3

CFY76-10

Infineon Technologies

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

3.5 V

9.5 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

MATTE TIN

.06 A

DUAL

R-PDSO-G4

GATE

Not Qualified

e3

CFY30E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

10 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

JUNCTION

GALLIUM ARSENIDE

MATTE TIN

.08 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

CFY25-20PES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

8.5 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

.08 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.25 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.08 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

ESA-SCC-5613/008

CFY67-08P

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

BG5120K

Infineon Technologies

N-CHANNEL

COMPLEX

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

2

.02 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 A

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e3

BG3130RH6327XTSA1

Infineon Technologies

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.025 A

DUAL

R-PDSO-G6

LOW NOISE

e3

CFY67-06H

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11.5 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

ESA/SCC 5613/004

GTVA123501FAP1

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

SQUARE

DEPLETION MODE

1

L BAND

2

FLATPACK

HIGH ELECTRON MOBILITY

225 Cel

GALLIUM NITRIDE

DUAL

S-CDFP-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

CFY67-08PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

CLX27-00ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

17.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

.42 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

3.38 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.42 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

CFY67-10PS

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10.5 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

CFY27-P

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 V

17.5 dB

FLAT

ROUND

DEPLETION MODE

1

KU BAND

4

DISK BUTTON

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.42 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

CLX32-05S

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

15.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

BG3130

Infineon Technologies

N-CHANNEL

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

.025 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW NOISE

CFY67-08ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

ESA/SCC 5613/004

GTVA220701FAV1R0XTMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

CLX27-00

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

17.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

2

FLANGE MOUNT

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.42 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

CFY27-PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 V

17.5 dB

FLAT

ROUND

DEPLETION MODE

1

KU BAND

.42 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.9 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.42 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

CLX34-05ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

14 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

2 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

2 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.