Infineon Technologies RF Small Signal Field Effect Transistors (FET) 305

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Manufacturers (1)
    • Infineon Technologies
    • Agilent Technologies
    • Broadcom
    • California Eastern Laboratories
    • Central Semiconductor
    • Defense Logistics Agency
    • Diodes Incorporated
    • Fujitsu
    • Hewlett Packard
    • Littelfuse
    • Microchip Technology
    • Mini-circuits
    • Mitsubishi Electric
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Qorvo
    • Renesas Electronics
    • Rf Micro Devices
    • STMicroelectronics
    • Samsung
    • Sanyo Electric
    • Sumitomo Electric Industries
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
Polarity or Channel Type
    • N-CHANNEL
    • P-CHANNEL
Configuration
    • COMMON SOURCE, 2 ELEMENTS
    • COMPLEX
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN DIODE RESISTOR AND CAPACITOR
    • SINGLE WITH BUILT-IN RESISTOR
Surface Mount
    • NO
    • YES
Maximum Power Dissipation (Abs)
    • .1 W
    • .125 W
    • .15 W
    • .16 W
    • .165 W
    • .175 W
    • .18 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .31 W
    • .33 W
    • .35 W
    • .36 W
    • .4 W
    • .5 W
    • .7 W
    • 10 W
    • 15 W
    • 250 W
    • 3 W
    • 35 W
    • 4.75 W
    • 5.7 W
    • 6 W
    • 7.4 W
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Minimum DS Breakdown Voltage
    • 10 V
    • 100 V
    • 104 V
    • 105 V
    • 11 V
    • 115 V
    • 12 V
    • 12.5 V
    • 13 V
    • 13.5 V
    • 135 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 18 V
    • 20 V
    • 25 V
    • 27 V
    • 3 V
    • 3.5 V
    • 30 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 5 V
    • 5.5 V
    • 50 V
    • 6 V
    • 6.5 V
    • 65 V
    • 7 V
    • 7.5 V
    • 8 V
    • 9 V
Minimum Power Gain (Gp)
    • 10 dB
    • 10.5 dB
    • 11 dB
    • 11.5 dB
    • 12 dB
    • 12.5 dB
    • 13 dB
    • 13.5 dB
    • 14 dB
    • 14.5 dB
    • 14.9 dB
    • 15 dB
    • 15.3 dB
    • 15.5 dB
    • 16 dB
    • 16.5 dB
    • 17 dB
    • 17.5 dB
    • 18 dB
    • 18.5 dB
    • 19 dB
    • 2.5 dB
    • 20 dB
    • 21 dB
    • 22 dB
    • 22.8 dB
    • 23 dB
    • 23.2 dB
    • 23.5 dB
    • 24 dB
    • 25 dB
    • 27 dB
    • 28 dB
    • 29 dB
    • 5.5 dB
    • 5.8 dB
    • 6 dB
    • 6.5 dB
    • 6.7 dB
    • 7 dB
    • 7.5 dB
    • 8 dB
    • 8.5 dB
    • 8.7 dB
    • 9 dB
    • 9.4 dB
    • 9.5 dB
Terminal Form
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • DEPLETION MODE
    • DUAL GATE, DEPLETION MODE
    • DUAL GATE, ENHANCEMENT MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • C BAND
    • K BAND
    • KA BAND
    • KU BAND
    • L BAND
    • S BAND
    • ULTRA HIGH FREQUENCY BAND
    • VERY HIGH FREQUENCY BAND
    • X BAND
Maximum Drain Current (Abs) (ID)
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .021 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .384 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 2 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
No. of Terminals
    • 10
    • 11
    • 12
    • 13
    • 15
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DIE
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • FET General Purpose Power
    • FET General Purpose Powers
    • FET General Purpose Small Signals
    • FET RF Small Signal
    • FET RF Small Signals
    • Other Transistors
Field Effect Transistor Technology
    • HETERO-JUNCTION
    • HIGH ELECTRON MOBILITY
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .05 W
    • .1 W
    • .12 W
    • .125 W
    • .13 W
    • .15 W
    • .16 W
    • .165 W
    • .18 W
    • .2 W
    • .22 W
    • .225 W
    • .24 W
    • .25 W
    • .27 W
    • .29 W
    • .3 W
    • .31 W
    • .35 W
    • .355 W
    • .357 W
    • .36 W
    • .4 W
    • .5 W
    • .58 W
    • .6 W
    • .7 W
    • .72 W
    • .725 W
    • .8 W
    • .9 W
    • 1 W
    • 1.5 W
    • 10 W
    • 2.25 W
    • 2.5 W
    • 3 W
    • 3.3 W
    • 3.38 W
    • 3.5 W
    • 3.75 W
    • 5 W
    • 5.4 W
    • 6.25 W
    • 6.75 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 8.1 W
    • 8.75 W
    • 9 W
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 160 Cel
    • 165 Cel
    • 175 Cel
    • 200 Cel
    • 225 Cel
    • 250 Cel
    • 85 Cel
Transistor Element Material
    • Al/In GALLIUM ARSENIDE
    • GALLIUM ARSENIDE
    • GALLIUM NITRIDE
    • SILICON
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Drain Current (ID)
    • .002 A
    • .005 A
    • .006 A
    • .01 A
    • .015 A
    • .018 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .07 A
    • .08 A
    • .09 A
    • .1 A
    • .105 A
    • .12 A
    • .125 A
    • .145 A
    • .15 A
    • .16 A
    • .2 A
    • .25 A
    • .3 A
    • .35 A
    • .4 A
    • .42 A
    • .5 A
    • .52 A
    • .55 A
    • .56 A
    • .6 A
    • .65 A
    • .7 A
    • .8 A
    • .84 A
    • 1 A
    • 1.1 A
    • 1.12 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 2 A
    • 2.1 A
    • 25 A
    • 3.8 A
    • 35 A
    • 50 A
    • 6 A
    • 7.5 A
    • 80 A
Terminal Position
    • BOTTOM
    • DUAL
    • QUAD
    • RADIAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
JESD-30 Code
    • DIE-2
    • DIE-6
    • DIE-8
    • O-CRDB-F4
    • O-MBCY-W3
    • O-MBCY-W4
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PRDB-F4
    • O-XQMW-F4
    • O-XRDB-F4
    • O-XRDB-G4
    • R-CBCC-N4
    • R-CDFM-F2
    • R-CDFM-F4
    • R-CDFM-F5
    • R-CDFP-F2
    • R-CDFP-F4
    • R-CDSO-G8
    • R-CDSO-N3
    • R-CQMW-F4
    • R-CQSO-G4
    • R-MDSO-N4
    • R-PBCC-N3
    • R-PBCC-N4
    • R-PDFM-F2
    • R-PDSO-F2
    • R-PDSO-F4
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-N10
    • R-PQFP-F4
    • R-PQMW-F4
    • R-PQSO-G4
    • R-PSFM-G4
    • R-PSFM-G5
    • R-PSFM-P4
    • R-PSFM-T4
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-F4
    • R-PSSO-G2
    • R-PXMW-F4
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDCC-N8
    • R-XDFM-F2
    • R-XQMW-F4
    • R-XRDB-F4
    • R-XUUC-N
    • R-XUUC-N10
    • R-XUUC-N11
    • R-XUUC-N12
    • R-XUUC-N13
    • R-XUUC-N15
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N4
    • R-XUUC-N5
    • R-XUUC-N6
    • R-XUUC-N7
    • R-XXUC-N
    • S-CDFM-F2
    • S-CDFP-F2
    • S-CQMW-F4
    • S-PDSO-N10
    • S-PDSO-N8
    • S-PQMW-F4
    • S-PQSO-G4
    • S-XUUC-N2
    • S-XUUC-N4
    • X-CQMW-F4
    • X-CXDB-F4
    • X-CXMW-F4
    • X-PXMW-G4
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Case Connection
    • DRAIN
    • GATE
    • ISOLATED
    • SOURCE
    • SOURCE AND SUBSTRATE
    • SUBSTRATE
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • CASCODE J-FET
    • CASCODE MOS
    • EUROPEAN PART NUMBER
    • HIGH EFFICIENCY
    • HIGH RELIABILITY
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
    • LOW NOISE, HIGH RELIABILITY
JEDEC-95 Code
    • MO-229
    • TO-106
    • TO-18
    • TO-206AF
    • TO-226
    • TO-226AA
    • TO-236
    • TO-236AB
    • TO-251
    • TO-252
    • TO-39
    • TO-72
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 230
    • 235
    • 240
    • 250
    • 260
    • NOT SPECIFIED
Maximum Feedback Capacitance (Crss)
    • .02 pF
    • .025 pF
    • .027 pF
    • .03 pF
    • .035 pF
    • .04 pF
    • .045 pF
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .15 pF
    • .25 pF
    • .35 pF
    • .4 pF
    • .5 pF
    • .6 pF
    • .65 pF
    • .7 pF
    • .8 pF
    • .9 pF
    • 1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.5 pF
    • 1.7 pF
    • 2 pF
    • 2.5 pF
    • 3 pF
    • 35 pF
    • 4 pF
    • 4.5 pF
    • 45 pF
    • 60 pF
Reference Standard
    • AEC-Q101
    • ESA-SCC-5613/002
    • ESA-SCC-5613/008
    • ESA/SCC 5613/002
    • ESA/SCC 5613/004
    • ESA/SCC 5614/006
    • IEC-134
    • IEC-60134
    • MIL-19500/375G
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BF998E6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

BF2030WE6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.04 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

260

BF998RE6327HTSA1

Infineon Technologies

BF2030

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.04 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

BF2030E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.04 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

260

BF999E6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

BF2040E6814HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.04 A

DUAL

R-PDSO-G4

1

SOURCE

LOW NOISE

e3

BF2030WH6814XTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.04 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

BF998E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

260

BF2030E6814HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

10 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

BF5030WH6327XTSA1

Infineon Technologies

TIN

1

e3

CLX32-00ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

15 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

CFY66-10

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

3.5 V

10.5 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

Not Qualified

e3

BG3130H6327XTSA1

Infineon Technologies

N-CHANNEL

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.025 A

DUAL

R-PDSO-G6

1

LOW NOISE

e3

GTVA107001ECP2

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

RECTANGULAR

DEPLETION MODE

1

L BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

225 Cel

GALLIUM NITRIDE

DUAL

R-CDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

CLX30-10P

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

17 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.84 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.84 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

PTVA043502FCP1

Infineon Technologies

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

115 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFP-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

BG5120KE6327HTSA1

Infineon Technologies

N-CHANNEL

COMPLEX

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 A

DUAL

R-PDSO-G6

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

CFH400

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

S BAND

.08 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.15 W

150 Cel

SILICON

MATTE TIN

.08 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

BF1009S

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

18 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.025 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

GTVA220701FAV1R2

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

CFY67-10PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10.5 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

.06 A

4

DISK BUTTON

FET RF Small Signal

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

MATTE TIN

.06 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

e3

CFY6708PESZZZA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

11 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

.06 A

RADIAL

O-CRDB-F4

SOURCE

NOT SPECIFIED

NOT SPECIFIED

ESA/SCC 5613/004

CFY25-PS

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

8.5 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

.08 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.25 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.08 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

CFY6710PPZZZA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

3.5 V

10.5 dB

FLAT

ROUND

DEPLETION MODE

1

K BAND

4

DISK BUTTON

HIGH ELECTRON MOBILITY

.2 W

150 Cel

Al/In GALLIUM ARSENIDE

.06 A

RADIAL

O-CRDB-F4

SOURCE

BF1012E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

16 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

PTFC270051MV1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

S BAND

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

S-PDSO-N10

SOURCE

BF1012

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

16 V

20 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

CLX30-00ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

16.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.84 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.84 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

CLY32-10H

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

11.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

6.75 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

ESA/SCC 5614/006

CF739E6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

10 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

L BAND

4

SMALL OUTLINE

METAL SEMICONDUCTOR

GALLIUM ARSENIDE

.08 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

CLY29-05ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

14 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

.7 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.7 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

CFY25-20P(SAM)

Infineon Technologies

GTVA261701FAV1R250

Infineon Technologies

CFH800

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

S BAND

.16 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.35 W

150 Cel

SILICON

MATTE TIN

.16 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

GTVA221701FAV1R0

Infineon Technologies

CLY32-10S

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

11.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

6.75 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

ESA/SCC 5614/006

CLY32-00ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

6.75 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

ESA/SCC 5614/006

CFH800T

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

.16 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.35 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.16 A

DUAL

R-PDSO-F4

Not Qualified

LOW NOISE

e3

CLX30-05P

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

17 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

.84 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.84 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

PTVA047002EVV1

Infineon Technologies

CLY32-05ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

14 V

11.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

6.75 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

ESA/SCC 5614/006

BF1009SE6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

18 dB

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

CFY25-23PES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

8 dB

FLAT

ROUND

DEPLETION MODE

1

X BAND

.08 A

4

DISK BUTTON

Other Transistors

METAL SEMICONDUCTOR

.25 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

.08 A

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e3

ESA-SCC-5613/008

BG5412K

Infineon Technologies

N-CHANNEL

COMPLEX

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

.025 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 A

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

e3

AEC-Q101

ST194E6716HTSA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

13 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 A

DUAL

R-PDSO-G4

SOURCE

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

CLX32-10ES

Infineon Technologies

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 V

15.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

1.4 A

2

FLANGE MOUNT

Other Transistors

METAL SEMICONDUCTOR

5.4 W

175 Cel

GALLIUM ARSENIDE

MATTE TIN

1.4 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e3

BG3123

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

2

ULTRA HIGH FREQUENCY BAND

.02 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 A

DUAL

R-PDSO-G6

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.