SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 23

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ALD810025SCL

Advanced Linear Devices

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

10.6 V

GULL WING

RECTANGULAR

DEPLETION MODE

4

16

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

70 Cel

SILICON

0 Cel

.08 A

DUAL

R-PDSO-G16

2N7620M2

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

14

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.8 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHG593110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.96 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.98 ohm

.96 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

2N7618M1

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.07 A

DUAL

R-CDIP-T14

1

MO-036AB

IRHG597110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.96 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.96 ohm

.96 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

IRHG597110SCS

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.96 ohm

.96 A

DUAL

R-CDIP-T14

HIGH RELIABLITY

MO-036AB

e0

RH - 100K Rad(Si)

2N7612M1

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

1.8 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

2N7633M2

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.8 A

DUAL

R-XDSO-F14

Not Qualified

e0

2N7630M2

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.56 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.36 ohm

.56 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHG597110PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.96 ohm

.96 A

DUAL

R-CDIP-T14

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

2N7628M1

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

.71 A

DUAL

R-CDIP-T14

1

Not Qualified

MO-036AB

IRHLA7970Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.56 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.36 ohm

.56 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHLG7970Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.25 ohm

.71 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLG770Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLA7670Z4

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.8 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHLA730Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

14

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.8 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHLA770Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

14

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.8 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHLA7930Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

4

.56 A

14

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.36 ohm

.56 A

DUAL

R-XDSO-F14

Not Qualified

e0

IRHLG730Z4

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.07 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

1.07 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLG73110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

1.8 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

MIL-19500; RH - 300K Rad(Si)

IRHLG7930Z4

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.25 ohm

.71 A

DUAL

R-CDIP-T14

Not Qualified

CMOS COMPATIBLE

MO-036AB

e0

IRHLG77110

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

1.8 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

MIL-19500; RH - 100K Rad(Si)

TD62M4503AFN

Toshiba

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.78 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

.8 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.89 W

150 Cel

SILICON

1.1 ohm

.8 A

DUAL

R-PDSO-G24

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.