SINGLE WITH BUILT-IN DIODE AND RESISTOR Small Signal Field Effect Transistors (FET) 486

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N7002WT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.31 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.6 ohm

.31 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

NTS4001NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.27 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.27 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

12 pF

NUD3124LT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

28 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.4 ohm

.15 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

40

260

T2N7002BK,LM(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

1.3 pF

T2N7002BK,LM

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

1.3 pF

T2N7002AK,LM

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.7 ohm

.2 A

DUAL

R-PDSO-G3

1

260

.7 pF

NTA4153NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.915 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.23 ohm

.915 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

NTJS4151PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.06 ohm

3.3 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

2V7002WT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.31 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.6 ohm

.31 A

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101

NTA4001NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.238 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.5 ohm

.238 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

NTK3134NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.89 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.35 ohm

.89 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

15 pF

NTK3043NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.545 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.255 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.8 ohm

.21 A

DUAL

R-PDSO-F3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

T2N7002BK,LM(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

1.3 pF

T2N7002AK,LM(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.7 ohm

.2 A

DUAL

R-PDSO-G3

1

260

.7 pF

NUD3105LT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.3 ohm

.5 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236

e3

40

260

RUM001L02T2CL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4.2 ohm

.1 A

DUAL

R-PDSO-F3

1

e3

10

260

CSD17483F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.55 ohm

1.5 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

3 pF

SI2377EDS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.061 ohm

4.4 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

T2N7002BK

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

CSD13381F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.4 ohm

2.1 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

3.3 pF

CSD17381F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.25 ohm

3.1 A

BOTTOM

R-XBCC-N3

1

DRAIN

ULTRA LOW RESISTANCE

e4

30

260

2.9 pF

CSD17483F4

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5 A

1.5 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.55 ohm

1.5 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

3 pF

SSM3K15AMFV,L3F(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

NTJS3151PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.625 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

2.7 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

SSM3K2615R,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.44 ohm

2 A

DUAL

R-PDSO-F3

25 pF

AEC-Q101

RZM001P02T2L

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.8 ohm

.1 A

DUAL

R-PDSO-F3

1

e3

30

260

NTA7002NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.154 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.154 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

SSM3K2615R,LF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.44 ohm

2 A

DUAL

R-PDSO-F3

25 pF

AEC-Q101

SSM3K2615RLF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.44 ohm

2 A

DUAL

R-PDSO-F3

25 pF

AEC-Q101

CSD13383F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.065 ohm

2.9 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

61 pF

CSD25483F4T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.39 ohm

1.6 A

BOTTOM

R-PBGA-B3

1

ULTRA LOW RESISTANCE

e4

30

260

NTE4153NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.915 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

.915 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

AO4447A

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3.1 W

150 Cel

SILICON

-55 Cel

.007 ohm

17 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

SSM3K2615R,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.44 ohm

2 A

DUAL

R-PDSO-F3

25 pF

AEC-Q101

CSD13380F3T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.092 ohm

2.1 A

BOTTOM

R-PBGA-B3

1

e4

30

260

12.5 pF

CSD17484F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.27 ohm

3 A

BOTTOM

R-PBGA-B3

1

e4

30

260

2.9 pF

SSM3K15AMFV,L3F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

6.5 pF

1HP04CH-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.6 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.17 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

18 ohm

.17 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

CSD17381F4

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3.1 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.25 ohm

3.1 A

BOTTOM

R-XBCC-N3

1

DRAIN

ULTRA LOW RESISTANCE

e4

30

260

2.9 pF

SI1443EDH-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.054 ohm

4 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CSD25484F4T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.18 ohm

2.5 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

7.2 pF

AO4447AL

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.007 ohm

17 A

DUAL

R-PDSO-G8

564 pF

NVS4001NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.27 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.27 A

DUAL

R-PDSO-G3

1

e3

30

260

12 pF

AEC-Q101

CSD25202W15T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.052 ohm

4 A

BOTTOM

S-PBGA-B9

1

e1

30

260

27 pF

CSD25484F4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.18 ohm

2.5 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

7.2 pF

CSD17382F4T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.18 ohm

2.3 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

19.5 pF

CSD15380F3T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

4 ohm

.5 A

BOTTOM

R-PBGA-B3

1

e4

30

260

.17 pF

CSD25480F3T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.26 ohm

1.7 A

BOTTOM

R-PBGA-B3

1

e4

30

260

4.7 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.