Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.6 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.125 ohm |
3.6 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
5.3 pF |
||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.27 W |
PLASTIC/EPOXY |
SWITCHING |
6 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
NICKEL PALLADIUM GOLD |
.18 ohm |
2 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
e4 |
||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
4 ohm |
.5 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
.17 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.55 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.89 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.35 ohm |
.89 A |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
e3 |
30 |
260 |
15 pF |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
2.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.064 ohm |
2 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.075 ohm |
2.2 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
10.5 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
MATTE TIN |
2.4 ohm |
.47 A |
DUAL |
R-PDSO-G3 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.075 ohm |
2.2 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
10.5 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
1.4 ohm |
.23 A |
BOTTOM |
S-PBCC-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.1 W |
150 Cel |
SILICON |
2.2 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
4.1 pF |
||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
6 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
6.5 pF |
|||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
6 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.18 ohm |
2.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
19.5 pF |
||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.092 ohm |
2.1 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
12.5 pF |
||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.023 ohm |
4.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
38 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.31 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
1.6 ohm |
.31 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e3 |
260 |
||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4.7 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
.7 pF |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2 ohm |
.27 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
12 pF |
|||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
4.2 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.9 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
2.8 A |
4 |
GRID ARRAY |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.105 ohm |
2 A |
BOTTOM |
S-PBGA-B4 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.73 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.5 ohm |
.73 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-236 |
e3 |
30 |
260 |
||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.5 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.174 ohm |
2.5 A |
BOTTOM |
R-PBGA-B3 |
1 |
ULTRA LOW RESISTANCE |
e4 |
30 |
260 |
||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.85 ohm |
.5 A |
DUAL |
R-PDSO-F3 |
1 |
260 |
7.3 pF |
|||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
2.2 ohm |
.25 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
ROHM |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
3.8 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.125 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
1.8 ohm |
.22 A |
DUAL |
R-PDSO-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.4 A |
.1 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
4.2 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.1 W |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.00039 A |
DUAL |
R-PDSO-F3 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN SILVER COPPER |
.06 ohm |
3.6 A |
BOTTOM |
S-PBGA-B4 |
1 |
HIGH RELIABILITY |
e1 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
4.7 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.7 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.75 ohm |
.4 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
1.3 pF |
|||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.7 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.75 ohm |
.4 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
1.3 pF |
|||||||||||||||||||||||||
|
ROHM |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
3.8 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.8 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.158 ohm |
1.8 A |
DUAL |
R-PDSO-F3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0021 ohm |
.25 A |
DUAL |
R-PDSO-G3 |
2 pF |
|||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
7 ohm |
.1 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 ohm |
.1 A |
DUAL |
R-PDSO-G3 |
4.5 pF |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
3 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236 |
e0 |
|||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1.75 ohm |
.4 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
2.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.033 ohm |
4 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.27 ohm |
3 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
2.9 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.123 ohm |
2.2 A |
BOTTOM |
S-PBGA-B4 |
1 |
e1 |
30 |
260 |
37 pF |
||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.6 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.125 ohm |
3.6 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
5.3 pF |
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|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
1.3 W |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.045 ohm |
4.2 A |
BOTTOM |
S-PBCC-N3 |
SOURCE |
ESD PROTECTED |
e4 |
17 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.238 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3.5 ohm |
.238 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
6 pF |
AEC-Q101 |
||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN SILVER COPPER |
.138 ohm |
2.2 A |
BOTTOM |
S-PBGA-B4 |
1 |
e1 |
30 |
260 |
42 pF |
||||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.3 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.3 ohm |
2.3 A |
BOTTOM |
R-PBGA-B3 |
1 |
ULTRA LOW RESISTANCE |
e4 |
30 |
260 |
||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.123 ohm |
2.2 A |
BOTTOM |
S-PBGA-B4 |
1 |
e1 |
30 |
260 |
37 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.