SINGLE WITH BUILT-IN DIODE AND RESISTOR Small Signal Field Effect Transistors (FET) 486

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

CSD25501F3T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3.6 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.125 ohm

3.6 A

BOTTOM

R-PBGA-B3

1

e4

30

260

5.3 pF

MIC94053YC6-TR

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.27 W

PLASTIC/EPOXY

SWITCHING

6 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

NICKEL PALLADIUM GOLD

.18 ohm

2 A

DUAL

R-PDSO-G6

Not Qualified

e4

CSD15380F3

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

4 ohm

.5 A

BOTTOM

R-PBGA-B3

1

e4

30

260

.17 pF

NTK3134NT5G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.89 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.35 ohm

.89 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

15 pF

SI1427EDH-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.064 ohm

2 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CSD18541F5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.075 ohm

2.2 A

BOTTOM

R-XBCC-N3

1

e4

30

260

10.5 pF

DMN61D8LQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

2.4 ohm

.47 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

AEC-Q101

CSD18541F5

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.075 ohm

2.2 A

BOTTOM

R-XBCC-N3

1

e4

30

260

10.5 pF

NTNS3190NZT5G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

1.4 ohm

.23 A

BOTTOM

S-PBCC-N3

1

DRAIN

e4

30

260

SSM3K37FS,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.1 W

150 Cel

SILICON

2.2 ohm

.2 A

DUAL

R-PDSO-G3

4.1 pF

SSM3K15AMFV,L3F(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

6.5 pF

SSM3K15AMFV,L3F(D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

CSD17382F4

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.18 ohm

2.3 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

19.5 pF

CSD13380F3

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.092 ohm

2.1 A

BOTTOM

R-PBGA-B3

1

e4

30

260

12.5 pF

CSD13385F5T

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.023 ohm

4.3 A

BOTTOM

R-XBCC-N3

1

e4

30

260

38 pF

2N7002WT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.31 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.6 ohm

.31 A

DUAL

R-PDSO-G3

Not Qualified

e3

260

SSM3K72CFS,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.7 ohm

.17 A

DUAL

R-PDSO-G3

.7 pF

NTS4001NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.27 A

DUAL

R-PDSO-G3

1

e3

30

260

12 pF

RE1C001UNTCL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4.2 ohm

.1 A

DUAL

R-PDSO-F3

1

e3

10

260

SI8800EDB-T2-E1

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

2.8 A

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.105 ohm

2 A

BOTTOM

S-PBGA-B4

1

Not Qualified

e3

30

260

TN0200K-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.73 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.5 ohm

.73 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236

e3

30

260

CSD25481F4T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.174 ohm

2.5 A

BOTTOM

R-PBGA-B3

1

ULTRA LOW RESISTANCE

e4

30

260

SSM3K36MFV,L3F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

.5 A

DUAL

R-PDSO-F3

1

260

7.3 pF

SSM3K37MFV,L3F(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.2 ohm

.25 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

RE1C001ZPTL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.8 ohm

.1 A

DUAL

R-PDSO-F3

1

e3

10

260

NTNS0K8N021ZTCG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.125 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1.8 ohm

.22 A

DUAL

R-PDSO-N3

1

DRAIN

e4

30

260

RU1C001UNTCL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

.1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

4.2 ohm

.1 A

DUAL

R-PDSO-F3

1

e3

10

260

2SK3376TK-BK

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

.00039 A

DUAL

R-PDSO-F3

Not Qualified

e0

DMP2047UCB4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.06 ohm

3.6 A

BOTTOM

S-PBGA-B4

1

HIGH RELIABILITY

e1

30

260

AEC-Q101

SSM3K7002CFU,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4.7 ohm

.17 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

SSM3K7002KFU,LF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.7 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

SSM3K7002KFULF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.7 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

RU1C001ZPTL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.8 ohm

.1 A

DUAL

R-PDSO-F3

1

e3

10

260

SSM3J108TU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.158 ohm

1.8 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3J35AFS,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0021 ohm

.25 A

DUAL

R-PDSO-G3

2 pF

SSM3K15F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3K16FU,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.1 A

DUAL

R-PDSO-G3

4.5 pF

SSM3K7002F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

e0

SSM3K7002KF,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

SI1424EDH-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.033 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

CSD17484F4

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.27 ohm

3 A

BOTTOM

R-PBGA-B3

1

e4

30

260

2.9 pF

CSD23202W10

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.123 ohm

2.2 A

BOTTOM

S-PBGA-B4

1

e1

30

260

37 pF

CSD25501F3

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3.6 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.125 ohm

3.6 A

BOTTOM

R-PBGA-B3

1

e4

30

260

5.3 pF

DMP2043UCA3-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

1.3 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.045 ohm

4.2 A

BOTTOM

S-PBCC-N3

SOURCE

ESD PROTECTED

e4

17 pF

NVA4001NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.238 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.238 A

DUAL

R-PDSO-G3

1

e3

30

260

6 pF

AEC-Q101

HPA00788W10

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.138 ohm

2.2 A

BOTTOM

S-PBGA-B4

1

e1

30

260

42 pF

CSD23381F4T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.35 W

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.3 ohm

2.3 A

BOTTOM

R-PBGA-B3

1

ULTRA LOW RESISTANCE

e4

30

260

CSD23202W10T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.123 ohm

2.2 A

BOTTOM

S-PBGA-B4

1

e1

30

260

37 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.