Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
2.4 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
3 pF |
AEC-Q101 |
||||||||||||||||||||
Micro Commercial Components |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
3 |
TO-236 |
e3 |
10 |
260 |
5 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
10 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
15 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.23 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
3 ohm |
.24 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
Not Qualified |
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD |
e4 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
135 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
2 pF |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.45 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.99 ohm |
.33 A |
DUAL |
R-PDSO-F6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
NO |
.35 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-65 Cel |
MATTE TIN |
2 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||
|
Micro Commercial Components |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.5 ohm |
.22 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
240 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN SILVER COPPER |
10 ohm |
.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
20 pF |
|||||||||||||||||||||
|
Comchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-55 Cel |
.0025 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
4 pF |
AEC-Q101 |
||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3.5 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
28 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.088 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
MATTE TIN |
250 ohm |
BOTTOM |
O-PBCY-T3 |
TO-92 |
e3 |
||||||||||||||||||||||||||
|
Comchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
.035 ohm |
5.8 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
77 pF |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
6.4 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e1 |
40 |
260 |
||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
3.2 ohm |
.25 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
2 pF |
AEC-Q101 |
||||||||||||||||||||
|
Panjit International |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
3 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
ULTRA LOW RESISTANCE |
e3 |
40 |
260 |
5 pF |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
6.4 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e1 |
40 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.385 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.4 ohm |
.385 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
|||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
YES |
.35 W |
1 |
.3 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.3 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
6.4 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-226AA |
e0 |
30 |
235 |
||||||||||||||||||||
|
Micro Commercial Components |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.6 ohm |
.22 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin (Sn) |
30 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.26 ohm |
.88 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Central Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.115 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-65 Cel |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
60 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
5 pF |
|||||||||||||||||||||
|
Central Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-65 Cel |
MATTE TIN |
2 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD |
e3 |
30 |
260 |
5 pF |
|||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
NO |
.35 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.73 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.5 ohm |
.73 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-236 |
e3 |
30 |
260 |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
60 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e0 |
30 |
235 |
5 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.4 ohm |
.8 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
10 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
5.5 ohm |
.14 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
HIGH RELIABILITY, LOW THRESHOLD |
e4 |
30 |
260 |
20 pF |
||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.81 ohm |
650 A |
DUAL |
R-PDSO-G3 |
5 pF |
||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.26 ohm |
.88 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.3 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.3 ohm |
2.3 A |
BOTTOM |
R-PBGA-B3 |
1 |
ULTRA LOW RESISTANCE |
e4 |
30 |
260 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
235 |
5 pF |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN SILVER COPPER |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
5 pF |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-55 Cel |
10 ohm |
BOTTOM |
O-PBCY-T3 |
TO-92 |
15 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-55 Cel |
5 ohm |
BOTTOM |
O-PBCY-T3 |
TO-92 |
15 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN SILVER COPPER |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
5 pF |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN SILVER COPPER |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e1 |
260 |
5 pF |
||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.