NXP Semiconductors Small Signal Field Effect Transistors (FET) 1,505

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PMCXB900UEL

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.62 ohm

.6 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

BSH202

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.417 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.52 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.9 ohm

.52 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

BSS84AKM

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

8.5 ohm

.23 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

BSS84AKT

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

8.5 ohm

.15 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

BSS84AKV

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

8.5 ohm

.17 A

DUAL

R-PDSO-F6

1

LOGIC LEVEL COMPATIBLE

BSS84AKT,115

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8.5 ohm

.15 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

e3

30

260

AEC-Q101; IEC-60134

PMG370XN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.69 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.96 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.44 ohm

.96 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMV35EPE

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.045 ohm

4.2 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

IEC-60134

BF861A,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

BSP126,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.35 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.375 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

15 pF

ON5520215

NXP Semiconductors

PMF370XN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.87 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.44 ohm

.87 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMF780SN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.57 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.92 ohm

.57 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMN35EN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.031 ohm

5.1 A

DUAL

R-PDSO-G6

1

LOGIC LEVEL COMPATIBLE

e3

30

260

IEC-60134

PMR370XN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.53 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.84 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.44 ohm

.84 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BF861A

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

BFT46,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

BSN20T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

20 ohm

.173 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

8 pF

BST82,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.175 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

10 ohm

.175 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

NX3008CBKV

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

PURE TIN

1.4 ohm

.4 A

DUAL

R-PDSO-F6

1

Not Qualified

LOW THRESHOLD

NX3020NAKV

NXP Semiconductors

TIN

1

e3

PMF250XNE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.254 ohm

.9 A

DUAL

R-PDSO-G3

1

e3

30

260

IEC-60134

PMF290XN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.35 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMGD175XN

NXP Semiconductors

PURE TIN

1

PMGD175XN,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.905 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.9 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.225 ohm

.9 A

DUAL

R-PDSO-G6

1

e3

30

260

IEC-60134

PMXB56EN

NXP Semiconductors

2N7002/T1

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

TIN

5 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

10 pF

2N7002FT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

TIN

2 ohm

.475 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

10 pF

2N7002PV

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

PURE TIN

1.6 ohm

.35 A

DUAL

R-PDSO-F6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

BFR31T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

260

1.5 pF

BSH111,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.335 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

4 ohm

.335 A

DUAL

R-PDSO-G3

1

Not Qualified

FAST SWITCHING

TO-236AB

e3

30

260

10 pF

BSH111,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.335 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

4 ohm

.335 A

DUAL

R-PDSO-G3

1

Not Qualified

FAST SWITCHING

TO-236AB

e3

30

260

10 pF

BSH112,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

10 pF

BST82T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.175 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.175 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

6 pF

NX3008NBKT

NXP Semiconductors

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

3

SMALL OUTLINE

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

PHT4NQ10T,135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.9 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.25 ohm

3.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

PMBFJ177

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

300 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PMBFJ177/DG,215

NXP Semiconductors

P-CHANNEL

YES

.3 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin (Sn)

1

e3

PMBFJ177T/R

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

300 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

PMDXB600UNEL

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.62 ohm

.6 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

PMGD370XN,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.41 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.74 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.44 ohm

.74 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMR290XN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.53 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.97 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.35 ohm

.97 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMV60EN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.055 ohm

4.7 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

BSH105,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.417 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.05 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.25 ohm

1.05 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

BSH205G2

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.17 ohm

2 A

DUAL

R-PDSO-G3

TO-236AB

BSR58T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

60 ohm

.005 A

DUAL

R-PDSO-G3

Not Qualified

e3

260

5 pF

NX7002AK

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

5.2 ohm

.19 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PMBFJ111,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

30 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.