Infineon Technologies - F3L300R12MT4P_B22

  1. Home
  2. Infineon Technologies - F3L300R12MT4P_B22
F3L300R12MT4P_B22 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number F3L300R12MT4P_B22
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;
Datasheet F3L300R12MT4P_B22 Datasheet
In Stock255
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 600 ns
No. of Terminals: 11
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 270 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X11
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
255 - -

Popular Products

Category Top Products

FP25R12W2T4PB11BPSA1 by Infineon Technologies

FP25R12W2T4PB11BPSA1

Infineon Technologies

Infineon's FP25R12W2T4PB11BPSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 39A, and max. collector-emitter voltage of 1200V. Ideal for power control applications due to its complex configuration, fast turn-on time (47ns), and isolated case connection for high-power operations at up to 175°C.
RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.
FZ400R17KE4HOSA1 by Infineon Technologies

FZ400R17KE4HOSA1

Infineon Technologies

FZ400R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1700V and current of 550A. It has a turn on time of 355ns and turn off time of 930ns, making it ideal for power control applications. The transistor comes in a rectangular package style with built-in diode, suitable for flange mount installations at temperatures up to 150°C.
HGTG20N60A4D by Onsemi

HGTG20N60A4D

Onsemi

HGTG20N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 28ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 150°C in a RECTANGULAR package style.
STGWT40HP65FB by STMicroelectronics

STGWT40HP65FB

STMicroelectronics

STGWT40HP65FB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Pmax of 283W. Ideal for power control applications, it has a toff of 202ns and ton of 169ns. Suitable for high-power systems operating b/w -55°C to 175°C.
BSM50GP120BOSA1 by Infineon Technologies

BSM50GP120BOSA1

Infineon Technologies

Infineon Technologies' BSM50GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 430ns and a max operating temperature of 150°C. Ideal for applications requiring high current handling capabilities in complex configurations.
RGS80TSX2DHRC11 by ROHM

RGS80TSX2DHRC11

ROHM

ROHM's RGS80TSX2DHRC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 80A, and Pmax of 555W. Ideal for power control applications due to its high voltage rating (1200V) and fast switching times (ton: 89ns, toff: 629ns). Suitable for use in automotive electronics meeting AEC-Q101 standards.
IRG4BC30UPBF by International Rectifier

IRG4BC30UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 320 ns;
IRG7PH42UD-EP by International Rectifier

IRG7PH42UD-EP

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; JESD-609 Code: e3;
FGH60N60SMD_F085 by Fairchild Semiconductor

FGH60N60SMD_F085

Fairchild Semiconductor

Fairchild Semiconductor's FGH60N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 66ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a plastic/epoxy package. The transistor has a nominal turn-off time of 139ns and meets AEC-Q101 standards.
STGD6NC60HDT4 by STMicroelectronics

STGD6NC60HDT4

STMicroelectronics

STGD6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration.
APT200GN60J by Microchip Technology

APT200GN60J

Microchip Technology

APT200GN60J by Microchip Technology is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 250A max collector current. It has a power dissipation of 682W, turn-off time of 1210ns, and turn-on time of 75ns. Ideal for power control applications requiring high voltage and current handling capabilities.
IXYT25N250CHV by Littelfuse

IXYT25N250CHV

Littelfuse

Littelfuse IXYT25N250CHV is an N-CHANNEL IGBT with 2500V VCEsat, 95A IC, and 937W power dissipation. Ideal for power control applications, it has a turn-off time of 775ns and operates b/w -55 to 175°C. Suitable for surface mount with gull wing terminals in a rectangular package shape.
IXBK55N300 by IXYS Corporation

IXBK55N300

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 130 A; Terminal Form: THROUGH-HOLE;
IKW15T120FKSA1 by Infineon Technologies

IKW15T120FKSA1

Infineon Technologies

IKW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 30A. It has a turn-off time of 720ns and turn-on time of 85ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 150°C.
SKM150GB12T4G by Semikron International

SKM150GB12T4G

Semikron International

SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
BSM150GB120DLC by Infineon Technologies

BSM150GB120DLC

Infineon Technologies

Infineon's BSM150GB120DLC is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.6V, and IC of 300A. Ideal for high-power applications requiring fast switching with toff of 650ns and ton of 190ns. Suitable for use in power converters, motor drives, and renewable energy systems.
STGP20V60DF by STMicroelectronics

STGP20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FGH40N60UFTU by Fairchild Semiconductor

FGH40N60UFTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
IXGH6N170 by IXYS Corporation

IXGH6N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V;