F4200R17N3E4BPSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	F4200R17N3E4BPSA1
Description	N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1700 V;
Datasheet	F4200R17N3E4BPSA1 Datasheet
In Stock	135

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.25 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	1160 ns
No. of Terminals:	30
Terminal Position:	UPPER
Nominal Turn On Time (ton):	270 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X30
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Other Names:	448-F4200R17N3E4BPSA1 SP001618996 F4200R17N3E4BPSA1-ND
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1700 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
135	$126.100	$17,023.500

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