Infineon Technologies - FD600R17KF6CB2NOSA1

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FD600R17KF6CB2NOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD600R17KF6CB2NOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 975 A; Maximum VCEsat: 3.1 V; Case Connection: ISOLATED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet FD600R17KF6CB2NOSA1 Datasheet
In Stock539
NAME DESCRIPTION
Other Names: 2156-FD600R17KF6CB2NOSA1-448
Maximum Collector Current (IC): 975 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Nominal Turn Off Time (toff): 1220 ns
Maximum Power Dissipation (Abs): 4800 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 470 ns
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 3.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
539 $1,033.940 $557,293.660

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