Infineon Technologies - FD800R33KF2-K

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FD800R33KF2-K by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FD800R33KF2-K
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1300 A; Maximum Collector-Emitter Voltage: 3300 V; Maximum VCEsat: 4.25 V; No. of Elements: 1;
Datasheet FD800R33KF2-K Datasheet
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NAME DESCRIPTION
Maximum Collector Current (IC): 1300 A
Maximum Power Dissipation (Abs): 9600 W
Maximum Collector-Emitter Voltage: 3300 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 4.25 V
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