Infineon Technologies - FS100R12KT4PB11BPSA1

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FS100R12KT4PB11BPSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS100R12KT4PB11BPSA1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
Datasheet FS100R12KT4PB11BPSA1 Datasheet
In Stock220
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 100 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: NO
Nominal Turn Off Time (toff): 490 ns
No. of Terminals: 25
Maximum Power Dissipation (Abs): 515 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 185 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X25
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Other Names: SP001380536
FS100R12KT4P_B11
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
220 $85.220 $18,748.400

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