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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FS100R17KS4FBOSA1 |
| Description | N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 4.7 V; |
| Datasheet | FS100R17KS4FBOSA1 Datasheet |
| In Stock | 763 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 100 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Sub-Category: | Insulated Gate BIP Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 515 ns |
| No. of Terminals: | 23 |
| Maximum Power Dissipation (Abs): | 960 W |
| Maximum Collector-Emitter Voltage: | 1700 V |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 141 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X23 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 4.7 V |
