FS100R17KS4FBOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS100R17KS4FBOSA1
Description	N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 4.7 V;
Datasheet	FS100R17KS4FBOSA1 Datasheet
In Stock	763

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	100 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	515 ns
No. of Terminals:	23
Maximum Power Dissipation (Abs):	960 W
Maximum Collector-Emitter Voltage:	1700 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	141 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X23
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	4.7 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
763	-	-

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