FS150R17N3E4_B11 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FS150R17N3E4_B11
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 835 W; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
Datasheet	FS150R17N3E4_B11 Datasheet
In Stock	897

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	1240 ns
No. of Terminals:	35
Maximum Power Dissipation (Abs):	835 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	280 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X35
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1700 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL APPROVED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
897	$205.350	$184,198.950

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