Infineon Technologies - FZ3600R17KE3_B2

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FZ3600R17KE3_B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ3600R17KE3_B2
Description N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20000 W; Maximum Collector Current (IC): 4800 A; Terminal Position: UPPER;
Datasheet FZ3600R17KE3_B2 Datasheet
In Stock610
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 4800 A
Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 2100 ns
No. of Terminals: 9
Maximum Power Dissipation (Abs): 20000 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 1050 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X9
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1700 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.45 V
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